玻璃中的非线性光学原理及材料

本文简要介绍了玻璃中产生非线性光学效应的基本原理及其应用,并介绍了均质玻璃、含有机化合物及含半导体量子点玻璃的非线性光学性能、应用前景和研究动态。     

高速半导体激光器的设计与制造

对于 Gb/s 量级的光纤通信系统,高速半导体激光器光源是关键器件。文章分析了限制半导体激光器速率的因素,提出了改善激光器带宽的途径,讨论了器件的制造。     

FT─IR技术在半导体材料中的应用

介绍了ＦＴ－ＩＲ测量技术在半导体材料中的应用。对Ｓｉ、ＧａＡｓ等材料的试样制备、杂质缺陷的测量及光谱研究进行了全面报道。大量实验结果表明，该技术是研究半导体材料结构、成分、杂质和缺陷特性的有效方法。     

应变p型Si1—xGex层中补偿浅能级杂质的低温陷阱效应

研究了ｐ型Ｓｉ１－ｘＧｅｘ应变层中补偿浅能级杂质（Ｐ、Ａｓ、Ｓｂ）的低温陷阱效应。研究发现，１）三种补偿浅能杂质Ｐ、Ａｓ、Ｓｂ相比较，Ｓｂ的陷阱效应最小，Ａｓ的最大；２）Ｇｅ组份ｘ越大，低温陷阱效应越小；３）补偿浅能级杂质浓度ＮＤ越大，低温陷阱效应越显著，温度越低，陷阱作用越明显。     

Effectiveness of 0.08 molar iodine in ethanol solution as a means of chemical surface passivation for photoconductance decay measurements

In a recent study of various chemical passivation solutions, Horanyi et al. suggested that 0.08 molar ethanol/iodine solution is an effective passivating medium for silicon surfaces. However, other work suggested that the degree of surface passivation for this solution is low compared to that achieved by corona discharge passivation. In this article it is shown that in combination with a bias light, the surface passivation of 0.08 molar ethanol/iodine solution can be of superior quality compared to thermally grown passivating oxides. Since the degree of surface passivation can be bounded, this method also allows extraction of a bulk lifetime estimate.     

Multielectrode Semiconductor Lasers

ＭｕｌｔｉｅｌｅｃｔｒｏｄｅＳｅｍｉｃｏｎｄｕｃｔｏｒＬａｓｅｒｓ①②ＬＵＨｏｎｇｃｈａｎｇ，ＳＵＮＨｏｎｇｘｉａ，ＬＵＯＢｉｎ，ＣＨＥＮＪｉａｎｇｕｏ（ＳｏｕｔｈｗｅｓｔＪｉａｏｔｏｎｇＵｎｉｖｅｒｓｉｔｙ，Ｃｈｅｎｇｄｕ６１００３１，ＣＨＮ）Ａｂ...     

Multielectrode Semiconductor Lasers^①②

Multielectrode semiconductor lasers are studied via the ray method.The expression of the output photon number of N-electrode semiconductor lasers has been derived for the first time.When N=1 or 2,the expression of the output photon number fits in that of one-electrode(general)or two-electrode semiconductor lasers perfectly.     

MnQ2（Q=S,Se,Te）and [Mn（en）3]Te4 Structures and Their Semiconductor Properties

The solvo-thermal technique is used for the synthesis of [Mn(en)3]Te4 (I).The crystal structure has been determined by single crystal X-ray diffraction techniques.The crystal belongs to the monoclinic, space group p21/c with unit cell:a=0.8461(1),b=1.5653(2), c=1.4269(2)nm, α=90°,β=91.37(1) (3)°, γ=90°,V=1.8893(4)nm3,and Z=4.The results show that the structure contains a linear chain Zintl anion,[Te4]2-and a complex cation,[Mn(en)3]2+. Optical studies have been performed on the powder sample of I, suggesting that the compound is a semiconductor with a band gap of 0.73eV. The semiconductor properties for MnQ2(Q=S,Se,Te) and [Mn(en)3]Te4 have been discussed by molecular orbital theory.     

自差型光电反馈半导体激光器的量子AM和FM噪声谱

本文研究了自差型光电反馈(SHOE)半导体激光器(LD)的量子噪声,给出了AM与FM噪声谱的解析表达式,讨论了反馈环路参数的选择对量子噪声的影响。     

大流量超纯氢气纯化设备制造技术

超纯氢气（大于6N）是半导体硅外延等工艺必备的工艺气体。文章介绍了利用超低温吸附的方法提纯大流量超纯氢气的工作原理，设备制造中的关键技术问题及难点，以及利用该技术制造的大流量超纯氢气纯化设备的使用效果。