ZIF-8衍生La掺杂ZnO纳米颗粒的制备及其气敏性能

以ZIF-8及La掺杂ZIF-8为前驱体,经高温煅烧制备ZnO及La掺杂ZnO纳米颗粒.研究了La掺杂对ZnO纳米颗粒的形貌、晶体结构及气敏性能的影响.利用X射线衍射仪、扫描电子显微镜对材料的微结构进行表征,结果表明:La掺杂有利于获得更小粒径的类球形纳米结构,但La掺杂未改变ZIF-8及衍生ZnO纳米结构的晶体结构....     

Na+掺杂对Li3V2（PO4）3/C晶体结构及性能的影响

利用一步碳热还原法制备了Li3-xNaxV2(PO4)3/C(x=0、0.01、0.02、0.03、0.05、0.08、0.10、0.15)复合正极材料,并用X射线衍射、扫描电镜、红外光谱、循环伏安法、电化学阻抗谱和恒电流充放电技术研究了掺杂对材料结构、微观形貌、充放电性能和Li+脱出嵌入过程的影响。研究表明掺杂少量Na+不影响材料Li3V2(PO4)3的基本结构,但可在Li3V2(PO4)3中形成电子缺陷,提高晶体内部原子的无序化程度,降低极化和电荷转移电阻,从而改善材料的电化学性能。与Li3V2(PO4)3/C相比,Li2.98 Na0.02 V2(PO4)3/C在倍率为15C下的第50次放电容量提高12.1mAh/g,具有较好的倍率性能和循环性能。     

Ti/SnO2+SbOx/MnO2(Ce)电极制备及性能表征

采用热分解法制备了不同浓度稀土元素铈掺杂钛基二氧化锰电极,通过SEM、极化曲线和EIS测试等方法分析了自制电极的形貌、催化性能和废水处理效果等.结果表明:适量铈元素的掺杂能改善二氧化锰电极的表面形貌,提高电极的析氯电催化活性,增强电极的耐蚀性和稳定性;使其在氯化钠电解质体系中处理亚甲基蓝印染废水的色度去除率达到96.9％,COD去除率达到91.8％.     

CaMoO4:Eu3+纳米荧光粉的尺寸调控及光学性能研究

采用水热法制备了CaMoO₄:Eu³⁺纳米荧光粉.研究了反应温度、反应时间和Eu³⁺掺杂浓度对CaMoO₄:Eu³⁺纳米晶的颗粒尺寸以及光学性能的影响.利用XRD、SEM、FT-IR、UV-Vis和PL对所得样品的相结构、形貌、光学吸收以及发光性能进行了表征.研究结果表明：所合成样品均为四方晶系白钨矿结构的CaMoO₄纳米晶;一方面,随着水热反应温度的降低或者反应时间的缩短,CaMoO₄:Eu³⁺纳米晶都表现出尺寸减小的趋势,荧光强度逐渐减弱,样品的紫外可见光吸收带边发生蓝移;另一方面,随着Eu³⁺掺杂浓度的增加,CaMoO₄:Eu³⁺纳米晶的颗粒尺寸逐渐减小,样品的紫外可见光吸收带边出现红移.同时,在275 nm的光激发下,CaMoO₄:Eu³⁺荧光粉在614 nm处的⁵D₀→⁷F₂跃迁具有最高的荧光强度,观察到红光发射,且发现其荧光猝灭摩尔浓度为6%.     

聚苯胺掺杂对2A12铝合金阳极氧化复合膜耐蚀性的影响

目前,国内尚未见有关铝合金表面聚苯胺-阳极氧化复合膜的研究报道.采用电化学共沉积技术在2A12铝合金表面制备了非导电聚苯胺-阳极氧化复合膜、导电聚苯胺-阳极氧化复合膜,利用傅立叶红外光谱(FTIR)、能谱分析、极化曲线、交流阻抗及中性盐雾试验对膜层的性能进行了研究.结果表明:2种复合膜均能明显提高2A12铝合金的自腐蚀...     

Fe2O3气敏材料研究进展

综述了近年来Fe_2O_3气敏材料常用的合成方法,如sol-gel法,沉淀法,水热法和微乳液法。总结了焙烧温度与掺杂效应对气敏性能的影响,探讨了气敏机理模型,并对今后的研究方向提出了一些看法。     

Al掺杂对锰酸锂结构与性能的影响

采用固相法合成了Al掺杂的尖晶石LiAlxMn2-xO4(x=0～0.4).通过X射线衍射对LiAlxMn2-xO4的物相进行了研究,并探讨了Al掺杂对材料的充放电性能和电子电导率的影响.合成的LiAlxMn2-xO4均为纯尖晶石相.随着Al的掺入,LiAlxMn2-xO4的充放电循环性能得到改善,Al含量越高,循环过程中的容量衰减越小.电子电导率测试结果表明:掺杂Al后,降低了材料的电子电导率,这与Al的掺入降低了晶体中电子的离域作用有关.     

NdFeB系纳米晶双相稀土永磁材料研究进展

综述了近几年各国学者在NdFeB系纳米晶双相稀土永磁材料方面的研究进展,重点分析了掺杂元素和处理工艺对永磁材料各方面性能的影响,指出了几种可以有效改善永磁材料综合性能的方法.     

HgCdTe分子束外延In掺杂研究

报道了用 MBE方法生长掺 In的 n型 Hg Cd Te材料的研究结果 .发现 In作为 n型施主在 Hg Cd Te中电学激活率接近 10 0 % ,其施主电离激活能至少小于 0 .6 m e V.确认了在制备红外焦平面探测器时有必要将掺杂浓度控制在～ 3× 10 1 5 cm- 3水平 .比较了高温退火前后 In在 Hg Cd Te中的扩散行为 ,得出在 40 0℃温度下 In的扩散系数约为10 - 1 4 cm2 / s,并确认了 In原子作为 Hg Cd Te材料的 n型掺杂剂的可用性和有效性 .     

Improved arsenic doping in metalorganic chemical vapor deposition of HgCdTe andin situ growth of high performance long wavelength infrared photodiodes

Controlled and effective p-type doping is a key ingredient forin situ growth of high performance HgCdTe photodiode detectors. In this paper, we present a detailed study of p-type doping with two arsenic precursors in metalorganic chemical vapor deposition (MOCVD) of HgCdTe. Doping results from a new precursortris-dimethylaminoarsenic (DMAAs), are reported and compared to those obtained from tertiarybutylarsine (TBAs). Excellent doping control has been achieved using both precursors in the concentration range of 3 × 1015-5 × 10¹⁷ cm⁻³ which is sufficient for a wide variety of devices. Arsenic incorporation efficiency for the same growth temperature and partial pressure is found to be higher with DMAAs than with TBAs. For doping levels up to 1 × 10₁₇ cm⁻³, the alloy composition is not significantly affected by DMAAs. However, at higher doping levels, an increase in the x-value is observed, possibly as a result of surface adduct formation of DMAAs dissociative products with dimethylcadmium. The activation of the arsenic as acceptors is found to be in the 152–50% range for films grown with DMAAs following a stoichiometric anneal. However, a site transfer anneal increases the acceptor activation to near 100%. Detailed temperature dependent Hall measurements and modeling calculations show that two shallow acceptor levels are involved with ionization energies of 11.9 and 3.2 meV. Overall, the data indicate that DMAAs results in more classically behaved acceptor doping. This is most likely because DMAAs has a more favorable surface dissociation chemistry than TBAs. Long wavelength infrared photodiode arrays were fabricated on P-on-n heterojunctions, grownin situ with iodine doping from ethyl iodide and arsenic from DMAAs on near lattice matched CdZnTe (100) substrates. At 77K, for photodiodes with 10.1 and 11.1 (im cutoff wavelengths, the average (for 100 elements 60 × 60 μm² in size) zero-bias resistance-area product, R₀A are 434 and 130 ohm-cm², respectively. Quantum efficiencies are ≥50% at 77K. These are the highest R₀A data reported for MOCVDin situ grown photodiodes and are comparable to state-of-the-art LPE grown photodiodes processed and tested under identical conditions.