聚乙烯醇膜的阻醇及导电性能(Ⅱ)戊二醛交联聚乙烯醇膜

为提高直接甲醇燃料电池(DMFC)用膜的阻醇性能，采用在渗透蒸发领域广泛使用且具有良好分离效果的聚乙烯醇(PVA)为主要材料，制备了戊二醛(GA)交联PVA膜，考察了此类膜的阻醇及质子导电能力。PVA(GA)膜的阻醇效果较目前在DMFC中广泛使用的Nation膜有显著提高，但其自身不具有质子导电能力，需外加电解质溶液以提高其电导率。     

In situ regeneration of the Ni-based catalytic reformer of a 5 kW PEMFC system

The paper reports the results of on-site regeneration catalytic bed of the natural gas reformer in a 5 kW PEM fuel cell system. The Ni catalyst previously poisoned by sulphur from the available natural gas, could be re-activated by injection of pure water steam, following the method developed for industrial reformers using the same metal catalyst: this method was shown to be perfectly efficient, provided no natural gas was fed during the operation. Results of the tests conducted are presented and discussed in relation to published data on S-sorption on Ni surfaces.     

Analytic computation of the photocurrent density in a n-6H-SiC/p-Si/n-Si/p-Si0.8Ge0.2 multilayer solar cell

In this work we conceived a model of a multilayer solar cell composed by four layers of opposite conductivities: an n-type 6H-SiC used as a frontal layer to absorb high energy photons (energy gap equals 2.9 eV), a p-type Si layer, an n-type Si layer and a p-type SiGe back layer to absorb low energy photons (Si_0.8Ge_0.2 with an energy gap equal to 0.8 eV). The impurity concentration in every layer of the model is taken equal to 10¹⁷ cm⁻³ to ensure abrupt junctions inside the cell. The optical properties of the separate layers have been fitted and tabulated to be used for thin films devices numerical simulation. We developed the equations giving the minority carrier concentration and the photocurrent density in each abscissa of the model. We used Matlab software to simulate and optimize the layers thicknesses to achieve the maximum photocurrent generated under AM0 solar spectrum. The results of simulation showed that the optimized structure could deliver, assuming 10⁵ cm/s surface recombination velocity, a photocurrent density of more than 53 mA/cm², which represents 88.3% of the ideal photocurrent (59.99 mA/cm²) that can be generated under AM0 solar spectrum.     

P-channel Ge/Si Hetero-nanocrystal Based MOSFET Memory

The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide T_ox=2nm and the dimensions of Si- and Ge-nanocrystal D_Si=D_Ge=5nm, the retention time of this device can reach ten years(~1×10~8s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage |V_g|=3V with respect to N-wells, respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI.     

小剂量辐照小鼠胸腺细胞膜流动性的变化

报道了以茈为荧光探针,探讨小剂量~(60)Co γ射线照射后小鼠胸腺细胞膜流动性的变化。结果表明,剂量在0.25-1.00Gy范围,胸腺细胞膜流动性降低与剂量之间呈明显线性关系。从0.50Gy起,辐照组荧光强度比值I_1/I_2与I_3/I_2与对照组的比较存有显著差异(P<0.05)。提示淋巴细胞膜流动性的变化可作为小剂量辐照早期效应的敏感指标。     

浅论太阳电池在通信工程中的应用

介绍了太阳电池应用的一般要求和太阳能供电系统的组成及运行，给出了工程设计个常用的太阳电池容量计算方法，并提出太阳能供电系统运行维护注意事项。     

Biomimetic synthesis of spherical nano-hydroxyapatite in the presence of polyethylene glycol

Spherical nano-hydroxyapatite (nano-HA) was synthesized successfully by a biomimetic method using Ca(NO₃)₂·4H₂O and (NH₄)₃PO₄·3H₂O as reagents in the presence of polyethylene glycol (PEG). The crystalline phase, microstructure, chemical composition, and morphology of the obtained samples were characterized by X-ray powder diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and transmission electron microscopy (TEM). The results show that spherical nano-HA with diameter of 30–50 nm can be synthesized in the presence of a certain concentration (2–6%) of PEG. The crystallinity of HA powder synthesized in the presence of PEG was higher than that synthesized in the absence of PEG, but the crystallinity of HA reduced with increasing the concentration of PEG. The electrical conductivity (EC) of the solution revealed that PEG reduced the transfer rate of Ca²⁺ in the process of HA crystallization, indicating the interaction between PEG and HA. The possible mechanism of formation spherical nano-HA was discussed.     

Diffusion and influence of Cu on properties of CdTe thin films and CdTe/CdS cells

The effective diffusion coefficients of Cu for thermal and photodiffusion in the CdTe films have been estimated from resistivity versus duration of thermal or photoannealing curves. In the temperature range 60–200°C the effective coefficient of thermal diffusion (D_t) and photodiffusion (D_ph) are described as D_t=7.3×10⁻⁷exp(−0.33/kT) and D_ph=4.7×10⁻⁸exp(−0.20/kT).It is found that the diffusion doping of CdTe thin films by Cu at 400°C results in a sharp decrease of resistivity up to 7 orders of magnitude of p-type material, depending on thickness of Cu film. The comparative study of performance of CdTe(Cu)/CdS and CdTe/CdS cells has been studied. It is shown that the diffusion doping of CdTe film by Cu increases efficiency of CdTe(Cu)/CdS cells from 0.9% to 6.8%. The degradation of photovoltaic parameters of CdTe(Cu)/CdS cell, during testing under forward and reverse bias at room temperature, proceeds at a larger rate than those of CdTe/CdS cell without Cu. The degradation of performance of CdTe(Cu)/CdS cells is tentatively assigned to electrodiffusion of Cu in CdTe, resulting in redistribution of concentration of Cu-related centers in CdTe film and heterojunction region.     

Quantum dot integration in heterostructure solar cells

InAs self-assembled quantum dots (SA-QDs) were incorporated into GaAlAs/GaAs heterostructure for solar cell applications. The structure was fabricated by molecular beam epitaxy on p-GaAs substrate. After the growth of GaAs buffer layer, multi-stacked InAs QDs were grown by self-assembly with a slow growth rate of 0.01 ML/s, which provides high dot quality and large dot size. Then, the structure was capped with n-GaAs and wide band gap n-GaAlAs was introduced. One, two or three stacks of QDs were sandwiched in the p–n heterojunction. The contribution of QDs in solar cell hetero-structure is the quantized nature and a high density of quantized states. I–V characterization was conducted in the dark and under AM1 illumination with 100 mW/cm² light power density to confirm the solar cell performance. Photocurrent from the QDs was confirmed by spectral response measurement using a filtered light source (1.1-μm wavelength) and a tungsten halogen lamp with monochromator with standard lock-in technique. These experimental results indicate that QDs could be an effective part of solar cell heterostructure. A typical I–V characteristic of this yet-to-be-optimized solar cell, with an active area of 7.25 mm², shows an open circuit voltage V_oc of 0.7 V, a short circuit current I_sc of 3.7 mA, and a fill factor FF of 0.69, leading to an efficiency η of 24.6% (active area).     

液晶分子附着能和盒间隙对响应时间的影响

通过理论分析和实验研究液晶分子附着能和液晶盒间隙对响应时间(τ0)的影响。用液晶盒有效间隙法和表面动力学方程法两种方法推出分析公式,由这两种方法推出的结果是一致的。实验数据与简化方程τ0-dx基本拟合(其中d是液晶盒的间隙,x是指数)。在两种极端的(极大或极小)附着能极限下,指数x分别接近2和1。这个结论有助于优化液晶显示器件的应用。