Zinc doped Fe2O3 for boosting Electrocatalytic Nitrogen Fixation to ammonia under mild conditions

Artificial nitrogen fixation is emerging as a promising approach for synthesis of ammonia at mild conditions. Inspired by biological nitrogen fixation based on bacteria containing iron, zinc doped Fe₂O₃ nanoparticles are proposed as an efficient and earth abundant electrocatalyst for converting N₂ to NH₃. In neutral media, it achieves a maximum Faradaic efficiency (FE) of 10.4% and a large NH₃ yield rate of 15.1 μg h^?1 mg^?1_cat. at ?0.5 V vs. reversible hydrogen electrode. This catalyst also exhibits excellent selectivity and stability. Theoretical calculations suggest the reaction follows the associative enzymatic mechanism and it has a barrier of as low as 0.68 eV.     

Compiler compatible 5.66 Mb/mm2 8T 1R1W register file in 14 nm FinFET technology

1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm² is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm² array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall V_min of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances.     

不同管距时玉米渗灌效果的试验研究

在运城市夹马口灌区和红旗灌区进行了1996,1997两个年度的玉米渗灌试验,研究了不同毛管间距条件下渗灌对其产量及水分生产率等的影响。结果表明,玉米渗灌毛管间距采用0.8~1.0 m较为适宜。毛管间距愈大,产量愈低;渗灌较地面灌平均减产7.23%,较旱地平均增产30.8%;玉米生长期内总耗水量地面灌最大,渗灌次之,旱地最小。渗灌可明显提高玉米水分生产率,渗灌处理水分生产率平均为1.65 kg/m3,是地面灌的1.2倍,是旱地的1.33倍;两年度渗灌较地面灌平均节水44.4%。     

波动方程数值模拟的隐式差分法

在有限差分波动方程数值模拟中,通常采用高阶差分方法来提高空间导数的数值逼近精度,以实现降低数值频散,提高数值模拟精度的目的。首先对差分频散进行了理论分析;然后讨论了估计一阶空间导数的隐式差分格式,并与通常采用的高阶精度显式差分格式进行了对比分析,结果表明,隐式差分格式能够在更宽的波数范围使差分频散控制在可接受的水平,如8阶精度的显式差分格式所适应的波数带宽约为O．55kmax,而隐式差分格式所适应的波数带宽约为0．7kmax;最后通过模型试算,对隐式差分格式的有效性进行了验证。模拟结果表明,用隐式差分格式在一定程度上降低了差分频散,提高了模拟精度。     

丝网气液分离器分离性能和压力损失分析

对丝网气液分离器的分离机理进行了详细分析,在此基础上给出了丝网气液分离器的分离效率和压降计算公式。与HG/T 21618-1998《丝网除沫器》中的公式相比,此公式可以用于任意组合的丝网结构,更具普适性,并且能定量分析各种分离机理对分离的贡献。对丝网式空气过滤器计算的结果表明,此公式具有很好的精度,可以用于工程设计。     

智能动态网络资源分配系统

通过对解决GSM移动通信网络热点区域话务拥塞问题的研究，提出了利用可控功分器实现智能动态网络资源的分配，解决不同种类的话务拥塞问题，并着重讨论了该系统目前的成功运用及前景。     

IP网络上电路倍增设备的研究

简要介绍了通过IP网络上电路倍增设备(IP CME)的数据流的处理过程;IP CME中的复用技术;控制IP包发送的激活算法;网络发生拥塞丢包的处理方法;并在传输效率和信令处理2个方面与VOIP进行比较,可以看出IP CME具有很大的优越性和良好的发展前景。     

嵌人式与独立存储器设计上的差异分析和研究

进入21世纪,随着集成电路的发展,SoC(System on Chip)片上系统应运而生。而作为SoC重要组成部分的嵌入式存储器,在SoC中所占的比重正逐步增加,并起着越来越重要的作用,那么嵌入式存储器与独立的存储器芯片在设计上存在着哪些差异?对此本文将以NOR型闪存为例在制造工艺的选取、衍生产品的设计、功耗与噪声、后端功能仿真、测试与修复等方面进行分析和研究。     

Influence of Polyalkylmethacrylate VII on Boundary Film Formation,Friction,Wear and Efficiency of Lubricants

1 Influence of PAMAon Boundary Fil mFormation and Friction1.1 Experi mental methodsUltra-thin optical interferometry has been used tostudy thinlubricating fil ms for more than a decade and theexperi mental details of this technique have been reportedpreviously[1].The principle of the test setup is shown inFigure1.A polished steel ball is loaded and rolled againstthe flat surface of a glass disc that is coated with a thinsemi-reflecting chromiumlayer and a silica spacer of about500nmthickne…