ITO透明导电薄膜的制备方法及研究进展

概述了透明导电薄膜的分类及ITO薄膜的基本性质,综述了用于制备ITO薄膜的磁控溅射法、真空蒸发法、溶胶-凝胶法、喷雾热解法、化学气相沉积法,论述了不同制备方法的优缺点。最后,介绍了ITO薄膜的应用现状,并对ITO薄膜的发展趋势进行了展望。     

Potential of thin-film silicon solar cells by using high haze TCO superstrates

Potential improvements in the performance of tandem amorphous silicon/microcrystalline silicon (a-Si:H/μc-Si:H) solar cells, related to the TCO superstrates with enhanced scattering properties are studied. In particular, optical effects of a high haze double textured (W-textured) SnO₂:F TCO superstrate are analyzed and compared to the properties of the pyramidal type SnO₂:F TCO superstrate. Solar cell with W-textured superstrate exhibits higher long-wavelength external quantum efficiency of the bottom μc-Si:H cell than the one with pyramidal type TCO superstrate. Optical simulations are employed to study the potential improvements of the solar cell performance if ideal haze parameter (H = 1) and/or a broad angular distribution function (Lambertian) of scattered light are applied to textured interfaces in the solar cell structure. Simulations reveal significant improvements in long-wavelength quantum efficiencies if a broad angular distribution function of scattered light is applied. Optical losses in the cells with enhanced scattering properties are analysed and evaluated in terms of short-circuit current losses in the supporting layers and losses due to reflected light.     

Study of swift heavy ion irradiation effect on indium tin oxide coated electrode for the dye-sensitized solar cell application

Our long term objective is to study the swift heavy ion (SHI) irradiation effect on photoanode of dye-sensitized solar cell (DSSC) with the aim to investigate the stability of DSSC component in space irradiations and possibility of improvement in efficiency of DSSC due to ion induced effects in oxide layer. The DSSC photoanode consists of three layers viz; transparent conducting oxide (TCO), porous oxide with wide band gap and monolayer of dye molecule on top of corning glass substrate respectively. In the present study, procured radio frequency (RF) sputtered indium tin oxide (ITO) film on corning glass substrate were irradiated by SHI using 110 MeV Ni⁸⁺ ions at different fluences ranging from 3.0 × 10¹¹ ion/cm² to 1.0 × 10¹⁴ ion/cm². After irradiation significant changes have been observed in the structural, optical and electrical properties using X-ray diffraction (XRD), UV-Vis and Four Probe measurements, respectively. Overall there is 13% increase in optical transmittance which is favorable and moderate increase in sheet resistance from 8 Ω/□ to 18 Ω/□ which is still within acceptable limits for DSSC applications.     

Chemical and Structural Factors Governing Transparent Conductivity in Oxides

The history, applications, and basic requirements of transparent conducting oxides (TCOs) are reviewed. Four basic families of TCOs are recognized, including n-type oxides with tetrahedrally-coordinated cations (e.g., ZnO), n-type oxides with octahedrally-coordinated cations (e.g., CdO, In₂O₃, SnO₂, and related binary and ternary compounds), p-type oxides with linearly-coordinated cations (e.g., CuAlO₂, Cu₂SrO₂, and related compounds), and n-type oxides with cage structures (e.g., 12CaO 7Al₂O₃). TCO behavior is discussed with attention to structural and chemical factors, especially point defect chemistry, governing carrier generation and transport properties.     

PECVD沉积微晶硅薄膜过程中氢原子对透明导电膜的影响

研究了等离子体放电过程中氢原子对单层SnO2和SnO2/ZnO双层透明导电膜的影响.发现当衬底温度超过150℃,H等离子体处理使SnO2薄膜的透光率显著降低.当在SnO2薄膜表面沉积一层ZnO时,既使ZnO膜的厚度为50nm,也可有效地抑制H原子对SnO2的还原效应,并在SnO2/ZnO双层膜上制备了转换效率为3.8%的微晶硅薄膜太阳电池.     

Highly conductive ZnO films with high near infrared transparency

We present an approach for deposition of highly conductive nominally undoped ZnO films that are suitable for the n‐type window of low band gap solar cells. We demonstrate that low‐voltage radio frequency (RF) biasing of growing ZnO films during their deposition by non‐reactive sputtering makes them as conductive as when doped by aluminium (ρ≤1·10⁻³Ω cm). The films prepared with additional RF biasing possess lower free‐carrier concentration and higher free‐carrier mobility than Al‐doped ZnO (AZO) films of the same resistivity, which results in a substantially higher transparency in the near infrared region (NIR). Furthermore, these films exhibit good ambient stability and lower high‐temperature stability than the AZO films of the same thickness. We also present the characteristics of Cu(InGa)Se₂, CuInSe₂ and Cu₂ZnSnSe₄‐based solar cells prepared with the transparent window bilayer formed of the isolating and conductive ZnO films and compare them to their counterparts with a standard ZnO/AZO bilayer. We show that the solar cells with nominally undoped ZnO as their transparent conductive oxide layer exhibit an improved quantum efficiency for λ > 900 nm, which leads to a higher short circuit current density J_SC. This aspect is specifically beneficial in preparation of the Cu₂ZnSnSe₄ solar cells with band gap down to 0.85 eV; our champion device reached a J_SC of nearly 39 mAcm⁻², an open circuit voltage of 378mV, and a power conversion efficiency of 8.4 %. Copyright © 2015 John Wiley & Sons, Ltd.     

Texture effect of neodymium doped gallium oxide thin films on their optical properties

Neodymium doped β-Ga₂O₃ films were elaborated on (1 0 0) silicon and (0 0 0 1) sapphire substrates by the radiofrequency magnetron sputtering method. X-ray diffraction, transmission electron microscopy, spectroscopic ellipsometry and photoluminescence measurements were performed to characterize and compare layers elaborated on the two substrates. Also, the Nd content effects were investigated. Films prepared on sapphire substrates were found to form a close orientation relationship with the substrate (−2 0 1) β-Ga₂O₃ || (0 0 0 1) sapphire, whatever the Nd content in the matrix. By contrast, the films grown on silicon substrates lose this texture for high Nd concentrations with a concomitant decrease of the Nd ions luminescence.     

Al3+ doping induced changes of structural,morphology, photoluminescence,optical and electrical properties of SnO2 thin films as alternative TCO for optoelectronic applications

Highly transparent and conductive pure (SnO₂) and aluminum doped tin oxide (Al:SnO₂) thin films were deposited on glass substrates by the sol-gel spin-coating method. The structural, morphological, optical and electrical properties of the prepared thin films at different doping rates have been studied. X-ray diffraction results revealed that all the films were polycrystalline in nature with a tetragonal rutile structure. SEM images of the analyzed films showed a homogeneous surface morphology, composed of nanocrystalline grains. The EDS results confirmed the presence of Sn and O elements in pure SnO₂ and Sn, O, Al in doped SnO₂ thin films. The optical results revealed a high transmittance greater than 85% in the visible and near infrared and a band gap varying between 3.82 and 3.89 eV. PL spectra at room temperature showed that the most dominant defects correspond to oxygen vacancies. A low resistivity of order varying between 10^?3 and 10^?4 Ω cm and a high figure of merits ranging between 10^?3 and 10^?2 Ω^?1 in the visible range were obtained. The best performances were obtained for samples containing 2 at. % Al, which could be used as an alternative TCO layer for future optoelectronic devices.     

Formation and Etching of the Insulating Sr-Rich V5+ Phase at the Metallic SrVO3 Surface Revealed by Operando XAS Spectroscopy Characterizations

In the search of low cost and more efficient electronic devices, here the properties of SrVO₃ transparent conductor oxide (TCO) thin film are investigated, both visible-range optically transparent and highly conductive, it stands as a promising candidate to substitute the standard indium-tin-oxide (ITO) in applications. Its surface stability under water (both liquid and vapor) and other gaseous atmospheres is especially addressed. Through the use of spectroscopy characterizations, X-ray photoemission and operando X-ray absorption measurements, the formation of a thin Sr-rich V⁵⁺ layer located at the surface of the polycrystalline SrVO₃ film with aging is observed, and for the first time how it can be removed from the surface by solvating in water atmosphere. The surface recovery is associated to an etching process, here spectroscopically characterized in operando conditions, allowing to follow the stoichiometric modification under reaction. Once exposed in oxygen atmosphere, the Sr-rich V⁵⁺ layer forms again. The findings improve the understanding of aging effects in perovskite oxides, allowing for the development of functionalized films in which it is possible to control or to avoid an insulating surface layer. This constitutes an important step towards the large-scale use of V-based TCOs, with possible implementations in oxide-based electronics.