乙烯氧化制环氧乙烷固定床反应器的模拟及稳定性分析

在筛选出合适的乙烯氧化制环氧乙烷动力学方程的基础上,对工业固定床氧化反应器进行一维和二维模型的模拟计算。考察操作工艺参数对反应器稳定性、转化率影响的敏感性以及N_2和CH_4做致稳气时反应温度和转化率的轴向、径向分布。     

Improvement of the optical properties of electrodeposited CuInSe2 thin films by thermal and chemical treatments

Cu, In and Se have been codeposited in thin films by potentiostatic one-step electrodeposition. The as-deposited material has shown direct optical transitions attributable to the CuInSe₂ semiconductor, but also additional absorption corresponding to another semimetallic phase. The secondary phases are selenium and copper selenide compounds which have been determined by composition measurements. In order to eliminate the semimetallic phases and to improve the semiconductor behaviour of the electrodeposited material, thermal and chemical treatments have been performed. After heat-treatment of the samples at 400°C in flowing argon, elemental selenium loss has been detected together with an enhancement of the allowed direct optical transition. The subsequent chemical etching of the layers in a KCN solution has showed to be successful in eliminating the copper selenide phases which were responsible of the remaining sub-bandgap absorption.     

Crystallization behavior of star-shaped poly(ethylene oxide) with cubic silsesquioxane (CSSQ) core

The crystallization behavior of well-defined star-shaped cubic silsesquioxane-poly(ethylene oxide) (CSSQ-PEO) and linear PEO were studied in terms of differential scanning calorimetry (DSC) and wide-angle X-ray scattering (WAXS). It was found in DSC analysis that the glass transition temperature (T_g) and the crystallization temperature (T_c) of CSSQ-PEO are different from those of linear PEO. The presence of CSSQ in PEO reduced the overall crystallization growth rate. This effect can be ascribed to the reduction of the mobility of the PEO crystallites in the presence of CSSQ and the star structure of the polymer. The Ozawa method is qualitatively satisfactory for describing the nonisothermal crystallizations of linear PEO and CSSQ-PEO. The presence of CSSQ leads to the diffusion- and nucleation-controlled mechanisms in the crystallization process of CSSQ-PEO whilst only the nucleation-controlled mechanism was observed in the case of linear PEO. The apparent activation energy required for crystallization was calculated using the Kissinger method. The isothermal crystallization morphology of PEO and CSSQ-PEO were also examined by cross-polarizing optical microscopy (CPOM). The CPOM images indicated the spherulite growth is slower in CSSQ-PEO as compared to linear PEO. It was also investigated that more number of PEO spherulites in CSSQ-PEO were observed, which sizes are markedly smaller than the spherulites developed in linear PEO. Wide-angle X-ray scattering (WAXS) studies showed that the crystallization peaks for linear PEO and CSSQ-PEO appeared at different temperature revealing the crystallization process and crystal growth rate are different from each other. However, no significant distortion of the crystal structure of PEO was evaluated in the presence of CSSQ.     

Anodising potential influence on well-ordered nanostructures formed by anodisation of aluminium in sulphuric acid

High-density structures with relatively well-ordered nanopore arrays have been obtained by the self-ordering growth of nanopores occurring during anodisation of aluminium in sulphuric acid. The resulting array of well-ordered nanopores strongly depends on an applied voltage of anodising, temperature and a procedure of synthesis. Regular arranged hexagonal arrays on aluminium with a relatively uniform pore diameter, interpore distance, and depth of pores exceeding 90 μm, can be formed by the self-ordering two-step anodising at 1 °C. The interpore distance and the pore diameter were evaluated on anodised aluminium layers obtained at different cell potentials ranging from 15 to 25 V. The detailed analyses of their uniformity were performed from SEM images. The analysis of a pore arrangement defects was made from SEM top view images taken on samples anodised at various cell potentials. The defect maps, known as Delaunay triangulations, of the arrangement of about 1000 pores were constructed for different applied anodising potentials. The percentage of pores that are not six-fold coordinated by the neighbouring pores indicates the percentage of defected surface.     

锂离子电池正极材料锂锰氧化物的固相合成研究进展

阐述了固相合成反应的原理，综述了锂锰氧化物的几种固相合成方法，并着重介绍了熔融渍法，多步加热法，机械化学法和微波化学法等在锂锰氧化物合成中的研究进展。     

3#大布袋收尘器更新改造方案的探讨

通过对3^#大布袋收尘器更新改造方案的对比分析，探讨适合工艺条件的最佳收尘器的选择途径。     

Hybrid gas-to-particle conversion and chemical vapor deposition for the production of porous alumina films

Porous alumina films can be found in a wide variety of materials, including filters, thermal insulation components, dielectrics, biomedical and catalyst supports, coatings and adsorbents. Production methods for these films are as equally diverse as their applications. In this work, a hybrid process based upon chemical vapor deposition and gas-to-particle conversion is presented as an alternative technique for producing porous alumina films, with the main advantages of solvent-free, low substrate-temperature operation. In this process, nanoparticles were produced in the vapor phase by reaction of aluminum acetylacetonate in the presence of oxygen. Downstream of this reaction zone, these nanoparticles were collected via thermophoresis onto a cooled substrate, forming a porous film. Some deposited films were subjected to post-processing in the form of annealing in air. Fourier-transform infrared spectra and X-ray energy-dispersive spectroscopy analysis confirmed the production of alumina at processing temperatures above 973 K. X-Ray diffraction revealed that the films were amorphous. Film thickness, ranging from 30 to 250 μm, and the average deposition rate were determined from scanning electron microscopy results. From transmission electron microscopy, the average primary particle size was determined to be approximately 18 nm and the formation of nanoparticle aggregates was evident. Annealing of the films at temperatures ranging from 523 to 1173 K in the presence of air did not have an effect on particle size. The specific surface area of the powder composing the films ranged from 10 to 185 m² g⁻¹, as determined from nitrogen gas adsorption by the Brunauer–Emmett–Teller method.     

Oxidation of porous nanocrystalline titanium nitride. II. Scale structure and composition

We have used x-ray phase analysis to study the composition of the products of reaction between oxygen and nanocrystalline powders with particle sizes 15, 40, 55, and 80 nm, and also specimens pressed (and sintered) from them. The powders were oxidized in air at 100°C (400 h) to 500°C (5 min), while the sintered specimens were oxidized at 600–900°C for 15, 120, and 240 min. In all cases, in the initial oxidation step the oxynitride Ti(O_xN_y) is formed, which over time is oxidized to TiO, Ti₂O₃, Ti₃O₅, TiO₂ (anatase) and TiO₂ (rutile). In the range 600–800°C, formation of a continuous oxide layer and conversion of anatase to rutile slows down diffusion of oxygen in the scale. We have established that at 900°C, the growth rate of the scale thickness increases and so the reflections from the oxynitride are barely noticeable on the diffraction patterns taken from the surface of the oxidized specimen. In these diffraction patterns, along with strong reflections from the rutile, we also observed weak reflections from lower oxides and anatase, which may be due to reaction between oxygen and the titanium ions diffused to the scale surface. We have concluded that at T > 850°C, the mechanism for oxidation of TiN changes. This is due to superposition of counterdiffusion of titanium ions on the diffusion of oxygen. __________ Translated from Poroshkovaya Metallurgiya, Nos. 3–4(448), pp. 72–78, March–April, 2006.     

Electrical and optical properties of fluorine-doped CdO films deposited by ultrasonic spray pyrolysis

The CdO:F samples have been deposited onto microscope glass substrates at 250 °C by ultrasonic spray pyrolysis method. With the incorporation of fluorine into CdO, the direct optical transition has shifted towards the shorter wavelengths, and the transparency of the material has increased at a given wavelength above the fundamental absorption edge. The shift in the absorption edge is explained by means of the Moss–Burstein effect, which is also supported with the results of the current–voltage characteristics. Here, a correlation has been established between the band broadening and the increase in conductivity due to the increase in carrier density.