Fabrication of ZnO nanorod-based hydrogen gas nanosensor

We report a first work on nanofabrication of hydrogen nanosensor from single ZnO branched nanorods (tripod) using in-situ lift-out technique and performed in the chamber of focused ion beam (FIB) system. Self-assembled ZnO branched nanorod has been grown by a cost-effective and fast synthesis route using an aqueous solution method and rapid thermal processing. Their properties were analyzed by X-ray diffraction, scanning electron microscopy, energy dispersion X-ray spectroscopy, transmission electron microscopy, and micro-Raman spectroscopy. These analyses indicate high quality ZnO nanorods. Furthermore, our synthesis technique permits branched nanorods to be easily transferred to other substrates. This flexibility of substrate choice opens the possibility of using FIB system for handling.

The main advantage of the proposed in-situ approach is a controllable lift-out procedure which permitted us to obtain a 90% success rate for building nanodevices. The fabricated nanosensor uses only single self-assembled ZnO branched nanorod (tripod) to gauge the 150 ppm H₂ in the air at room temperature. The hydrogen sensitivity is in the range of 0.6–2% depending on which two branches to use. The nanosensor has selectivity against other gases such as O₂, CH₄, CO and LPG, which shows sensitivity of <0.02%. The single ZnO branched nanorod sensor can operate at low power of <5 μW.     

sol-gel法制备的ZnO:(Al,La)透明导电膜光电性能

通过X射线衍射、紫外–可见分光光度计、扫描电镜和四探针仪分析等手段,考察了退火温度对ZnO:(Al,La)薄膜微观结构、光学和电学性能的影响,Al掺杂浓度对电阻率的影响。结果表明:随退火温度的升高,薄膜(002)晶面择优取向生长增强,平均晶粒尺寸增大,电阻率降低,透光率上升。在x(Al)为1%,退火温度550℃时,薄膜最低电阻率为1.78×10–3?·cm,平均透光率超过85%。     

煅烧温度和恒温时间对ZnO/AAO/Si组装体系的影响

以AAO/Si为模板,采用化学气相沉积(CVD)的方法在不同温度下,通过煅烧Zn粉和C粉的混合物制备ZnO/AAO/Si组装体系,并对其结构和性质进行了研究。扫描电镜(SEM)结果表明:随着煅烧温度的升高,AAO表面的孔洞逐渐被封堵,当温度达到900℃时,在AAO的表面出现了一层ZnO薄膜。X射线衍射(XRD)结果显示,700℃时在XRD图谱上观看到六角纤锌矿的ZnO的衍射峰,并且随着温度的升高,ZnO的衍射峰逐渐增强,当温度升至800和900℃时出现了ZnAl2O4的衍射峰。因此,化学气相沉积制备组装体系时的最适温为700℃。在700℃时煅烧不同恒温时间制备的ZnO/AAO/Si组装体系SEM图显示,随着恒温时间的延长,孔的封闭效应逐渐明显。     

Morphology Transformation Pathway of Block Copolymer-Directed Cooperative Self-Assembly of ZnO Hybrid Films Monitored In Situ during Slot-Die Coating

Cooperative self-assembly (co-assembly) of diblock copolymers (DBCs) and inorganic precursors that takes inspiration from the rich phase separation behavior of DBCs can enable the realization of a broad spectrum of functional nanostructures with the desired sizes. In a DBC assisted sol–gel chemistry approach with polystyrene-block-poly(ethylene oxide) and ZnO, hybrid films are formed with slot-die coating. Pure DBC films are printed as control. In situ grazing-incidence small-angle X-ray scattering measurements are performed to investigate the self-assembly and co-assembly process during the film formation. Combining complementary ex situ characterizations, several distinct regimes are differentiated to describe the morphological transformations from the initially solvent-dispersed to the ultimately solidified films. The comparison of the assembly pathway evidences that the key step in the establishment of the pure DBC film is the coalescence of spherical micelles toward cylindrical domains. Due to the presence of the phase-selective precursor, the formation of cylindrical aggregates in the solution is crucial for the structural development of the hybrid film. The pre-existing cylinders in the ink impede the domain growth of the hybrid film during the subsequent drying process. The precursor reduces the degree of order, prevents crystallization of the PEO block, and introduces additional length scales in the hybrid films.     

Towards thinner and low bowing silicon solar cells: form the boron and aluminum co‐doped back surface field with thinner metallization film

Using thinner wafers can largely reduce the cost of silicon solar cells. One obstacle of using thinner wafers is that few methods can provide good dopant concentration for the back surface field (BSF) and good ohmic contact while generated only in low bowing. In this paper, we have demonstrated the screening–printing B and Al (B/Al) mixture metallization film technique, making use of the screen‐printing technique and the higher solubility of B in silicon to form a B/Al‐BSF. This technique can raise the carrier concentration in the BSF by more than one order of magnitude and reduce the back surface recombination at a low firing temperature (≤800 °C). We have also shown that through the new technique, the metallization paste thickness at the rear could be reduced largely, which however did not degrade the solar cell efficiency. All these efforts are aiming for pushing forward the application of thinner wafers. Copyright © 2011 John Wiley & Sons, Ltd.     

镀膜光纤传感器氧化锌压电层薄膜沉积的研究

主要研究镀膜光纤传感器。首先介绍了氧化锌镀膜光纤的几何结构，分析了此几何结构压电声光振荡的基本原理，给出了光纤声光相位调制器的等效网络模型，然后根据此模型推出了声光压电层反射系数5m并按预设参数进行了计算机模拟。在此基础上，利用Zn(NO3)2单盐水溶液体系在铜基上进行阴极电沉积直接得到氧化锌镀膜，通过讨论电沉积过程中一些主要实验条件对氧化锌镀膜性能的影响，提出了一种稳定实用、经济的电沉积配方。     

高反射性电流阻挡层用于提高InGaN/GaN发光二极管的光输出功率

由SiO₂/TiO₂分布布拉格反射镜(DBR)和Al镜组成的混合式反射电流阻挡层用于提高InGaN/GaN发光二极管的光输出功率。混合式反射电流阻挡层不仅增强了电流扩展效应而且有效的将射向p金属电极的光子反射防止其对p电极焊点附近光子的吸收。实验结果表明,淀积在p-GaN上1.5个周期的SiO₂/TiO₂DBR和Al镜在455nm垂直入射时的反射率高达97.8%。在20mA的工作电流下,与没有电流阻挡层的发光二极管相比,生长1.5对SiO₂/TiO₂ DBR和Al镜作为电流阻挡层的发光二极管的光输出功率提高了12.5%,且光输出功率的分布更加均匀。     

Grain boundary layer behavior in ZnO/Si heterostructure

The grain boundary layer behavior in ZnO/Si heterostucture is investigated. The current-voltage (I-V) curves, deep level transient spectra (DLTS) and capacitance-voltage (C-V) curves are measured. The transport cur-rents of ZnO/Si heterojunction are dominated by grain boundary layer as high densities of interracial states existed. The interesting phenomenon that the crossing of In I-V curves of ZnO/Si heterojunction at various measurement temper-atures and the decrease of its effective barrier height with the decrement of temperature are in contradiction with the ideal heterojunction thermal emission model is observed. The details will be discussed in the following.     

Theoretical and experimental investigations of the thermoelectric properties of Al-, Bi- and Sn-doped ZnO

In this paper, the thermoelectric properties of ZnO doped with Al, Bi and Sn were investigated by combining experimental and theoretical methods. The average Seebeck coefficient of Bi doped ZnO over the measured temperature range is improved from −90 to −497 μV/K. However, segregation of Bi₂O₃ in ZnO:Bi sample, confirmed by FESEM, lead to enormous grain growth and low electrical conductivity, which makes Bi is not a good dopant to improve ZT value of ZnO. As a 4+ valence cation, Sn doping actually show an increase in carrier concentration to 10²⁰ cm⁻³, further enhancing the electrical conductivity. Unfortunately, the Seebeck coefficient of ZnO:Sn samples is even lower than pure ZnO sample, which lead to a low ZT value. As for ZnO:Al sample, with nearly no change in lattice thermal conductivity, electrical conductivity and Seebeck coefficient were both enhanced. Threefold enhancement in ZT value has been achieved in ZnO:Al sample at 760 °C compared with pure ZnO.     

热处理工艺对Al/Cu双金属复合界面的影响

采用POLYVAR-MET型金相显微镜、带有GENESIS60S能谱仪的Sirion200场发射扫描电镜对经高温和低温退火处理的Al/Cu双金属复合界面组织进行观察分析,研究热处理工艺对界面组织及扩散层厚度的影响规律,并进一步通过冷轧实验研究扩散层厚度与界面结合强度的关系,获得综合满足材料结合强度和成型性能的热处理工艺。结果表明:高温退火处理的Al/Cu复合试样难以实现稳定的塑性成型,低温退火处理能使界面结合牢固,冷变形塑性好;Al/Cu双金属复合材料的界面扩散结合层厚度的最佳范围为1.2~3.5μm;最佳工艺为低温退火加热到300~350℃,保温45~60 min。