首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   18601篇
  免费   2064篇
  国内免费   1107篇
电工技术   726篇
综合类   831篇
化学工业   5868篇
金属工艺   2057篇
机械仪表   327篇
建筑科学   206篇
矿业工程   796篇
能源动力   2991篇
轻工业   843篇
水利工程   45篇
石油天然气   1739篇
武器工业   77篇
无线电   797篇
一般工业技术   2579篇
冶金工业   1297篇
原子能技术   457篇
自动化技术   136篇
  2024年   98篇
  2023年   730篇
  2022年   944篇
  2021年   870篇
  2020年   849篇
  2019年   749篇
  2018年   587篇
  2017年   665篇
  2016年   646篇
  2015年   655篇
  2014年   1011篇
  2013年   1165篇
  2012年   1249篇
  2011年   1229篇
  2010年   971篇
  2009年   957篇
  2008年   790篇
  2007年   1021篇
  2006年   939篇
  2005年   847篇
  2004年   770篇
  2003年   633篇
  2002年   575篇
  2001年   497篇
  2000年   396篇
  1999年   316篇
  1998年   263篇
  1997年   213篇
  1996年   196篇
  1995年   167篇
  1994年   143篇
  1993年   111篇
  1992年   83篇
  1991年   76篇
  1990年   98篇
  1989年   50篇
  1988年   40篇
  1987年   25篇
  1986年   15篇
  1985年   25篇
  1984年   33篇
  1983年   15篇
  1982年   15篇
  1981年   6篇
  1980年   5篇
  1979年   7篇
  1978年   4篇
  1974年   3篇
  1959年   2篇
  1951年   14篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
61.
The behavior of hydrogen absorption and release in hydrogen decrepitation (HD) process of Nd-Fe-B alloys were investigated. The results reveal that the reactivity and the amount of hydrogen absorption in HD process are related to the surface activity of the alloy so that the fresh and active surface has a higher efficiency. The presence of Nd-rich phase at the grain boundary is an essential factor of the HD activity of the alloy at room temperature. On degassing, hydrogen is released from the HD powder continuously with increasing temperature. And the residual hydrogen is as low as 0.0015% at 1073K, which shows that the hydrogen is almost exhaused. It is feasible to remove the hydrogen from the HD powder by heating treatment at the temperature of 523-723K for 1h prior to the magnetic field forming in order to decrease the harmful effect of hydrogen on the easy axis alignment of HD magnet.  相似文献   
62.
镁基储氢材料的研究进展   总被引:7,自引:0,他引:7  
本文回顾和总结了近几十年来,特别是近十年来镁基储氢材料的发展情况,重点综述了机械合金化Mg-Ni2合金体系的研究情况及其近期的进展,从储氢材料成份及配比,制造工艺改进以及材料的组织结构对材料性能的影响等各方面进行一定的分析和归纳,对储氢材料研究中出现的问题以及今后的发展方向都作了探讨。  相似文献   
63.
Hydrogen is the lightest element in nature, and so, its detection and quantitative analysis is difficult by the conventional methods utilized for other elements. In the recent years the technique of elastic recoil detection analysis (ERD) using 1–2 MeV He+ beam has been developed to quantitatively and simultaneously analyze hydrogen and its isotopes in solids. Such a facility has been set up using the 2 MeV Van-de-Graaff accelerator at IIT Kanpur. It facilitates H and D analysis in a material up to a depth of ∼ 1μm with a detection sensitivity of 0·1 at.% and depth resolution of about 300 ?. The application potential of this setup is illustrated by presenting the results of measurements performed on Al:H:D systems prepared by plasma source ion implantation and highT c YBCO pellets exposed to humid atmosphere.  相似文献   
64.
We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO2 interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.  相似文献   
65.
Thin-layer carbon supported Nafion-H catalysts were found to be active and highly selective (S>98%) for the partial oxidation of C1-C3 alkanes, in a three phase catalytic membrane reactor (3PCMR), under mild conditions and in the presence of H2O2. The influences of the catalyst teflon loading and H2O2 concentration on the reaction rate have been evaluated. A reaction pathway, based on the electrophilic hydroxylation of the C-H bond of alkanes with protonated hydrogen peroxide (H3O 2 + ), is discussed.  相似文献   
66.
Electroless NiP films, with 12 to 16 wt % P, were deposited from a moderately acid solution. Thermogravimetric analysis indicates the presence of occluded hydrogen in the layers, which desorbs upon heating. The amount of incorporated hydrogen decreases when the pH of the solution or the nickel sulfate concentration is increased; by contrast it increases with hypophosphite concentration. Cyclic voltammetry, using an electrochemical quartz crystal microbalance, confirms the existence of parasitic reactions, namely the reduction of protons of the solvent during the cathodic process and oxidation of hydrogen during the dissolution of the layers. This behaviour is in qualitative agreement with the proposed reaction scheme.  相似文献   
67.
本文简要介绍了国外在开发超酸性气体过程中遇到的材料选择、腐蚀监测、水化物堵塞、超酸性气的处理和加工等问题所采取的措施和办法。  相似文献   
68.
聚苯硫醚酰胺的合成与表征   总被引:7,自引:1,他引:6  
用4-氯苯甲酰4′-氯苯胺和硫化钠为原料在常压下合成了聚苯硫醚酰胺,并对其进行了表征。结果表明所合成的产物为结晶性聚合物,并且有较高的热稳定性。  相似文献   
69.
过氧化氢爆炸事故浅析   总被引:6,自引:1,他引:5  
通过两起过氧化氢(双氧水)爆炸事故,分析了过氧化氢由于本身具有较大的潜能,很不稳定,当受热、泄漏、撞击、摩擦时,易分解放热产生高温,造成火灾爆炸事故,对火灾爆炸反应过程与爆炸机理进行了探讨。  相似文献   
70.
硫化钠在黑白钨加温精选中的应用研究   总被引:3,自引:0,他引:3  
陈文胜 《中国钨业》2002,17(3):26-28,32
介绍了柿竹园黑白钨混合粗精矿加温精选中 ,添加硫化钠与水玻璃混合剂比单一添加水玻璃能更有效地使白钨矿与萤石等含钙矿物及脉石矿物分离。论述了硫化钠在加温精选中的作用效果并探讨了其作用机理  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号