A harmonic injection SPWM method for the high-responsive PMSM control system

In a permanent magnet synchronous motor (PMSM) control system, usually, the phase voltage instruction is limited independently to prevent a three-phase pulse width modulation (PWM) wave from overflowing. This method decreases the efficiency of the bus voltage and causes voltage vector direction errors. To solve these problems, we propose a harmonic injection sinusoidal pulse-width modulation (SPWM). This method uses harmonic injected sinusoidal PWM to improve the utilisation ratio of the bus voltage, and consequently improve system performance. In this paper, we analyse the problem in terms of potential difference. The simulation results show that the proposed method can increase the utilisation ratio of the bus voltage up to 15.4%, and the voltage vector mode obtained with the proposed algorithm is larger than that obtained with the conventional one. The method with harmonic injection consequently improves current response, without affecting voltage vector accuracy. The experiment results validate the proposed method.     

Web应用的安全现状与防护技术研究

随着互联网技术的发展,Web技术得到了日益广泛的应用,越来越多基于Web应用的系统被部署在互联网上以提供各式各样的服务,由于互联网本身的开放性使其时刻面临着潜在恶意攻击,其安全性问题日益突出。在这样的背景下,进行Web应用安全现状与防护技术的研究具有很强的现实意义,为了提高Web安全性,建立健全Web防护体系,这里从客户端、服务器端和传输三方面对当今Web应用所面临的安全成胁进行了系统地分析,并针对各自面临的常见安全威胁提出了相应的安全防护方案和防护建议。     

半导体模具发展历程

介绍半导体模具从单注射头模具发展到双注射头模具、多注射头模具,以及其它封装方式等;通过单注射头模具与双注射头模具、多注射头模具进行比较,可以明确半导体模具发展必然进程,体现出现代半导体模具市场确实是按模具的先进性进行分配市场份额,从而推动半导体模具发展历程。     

恢复和提高Y1Ba2Cu3O7—x高温超导膜性能的一种方法

Ｙ１ＢａＣｕ３Ｏ７－ｘ高温超导膜用于探测器研究在制备过程中及存放期间,氧成份的逸漏是难以避免的,这导致超导薄膜性能严重退化甚至报废。提出了一种方法,即注氧法,对于恢复超导薄膜中的氧组分含量,保持和提高超导膜的性能,是行之有效的方法。     

A 640 by 480 Pixels Readout Circuit for IR Imaging

A readout circuit for a 640 × 480 pixels FPA (focal plane array) has been successfully designed, fabricated and tested. The circuit solution is based on a per pixel source-follower direct injection (SFDI) pre-amplifier. Signal multiplexing is performed in both X and Y direction. The pixel size is 25 m × 25m. The chip is optimized for a QWIP (quantum well infrared photodetector) operating at a temperature of 70 K. The circuit has been realized in a standard 0.8 m CMOS process.     

埋栅型电力静电感应晶闸管的Ⅰ-Ⅴ特性反向转折机理

研究了静电感应晶闸管的反向转折特性.当工作在正向阻断态的阳极电压增大到某一临界值时,静电感应晶闸管的Ⅰ-Ⅴ曲线呈现出反向转折特性,甚至转向导通态.在综合考虑了工作机理、双注入效应、空间电荷效应、沟道中的电子-空穴等离子体和载流子寿命变化的基础上分析了静电感应晶闸管的反向转折特性.首次给出了反向转折机理的理论解释,并给出了估算转折电压和电流的数学表达式,在常用工艺参数范围内,计算结果和实验测量值基本一致.     

吹喷氧化物质点改善铁基合金的高温耐磨性

为了节省能源,国内外广泛开展了煤的流化床燃烧技术的研究。然而,流化床中埋管材料及其上面所焊鳍片材料耐高温磨蚀性能的提高,是推广这一技术的关键。采用共沉法或机械合金化方法已成功地制成氧化物弥散强化高温合金,不仅高温强度可以维持到合金的熔点附近,而且可以改善高温耐磨性,但这类合金制造工艺复杂、成本高,不适宜大量用于能源工业。向钢水中吹喷氧化物质点可以明显提高镇静钢的室温和高温强度,而且价     

Thermally Stable Hole‐Transporting Materials Based upon a Fluorene Core

We report a new class of diamine hole‐transporting materials (HTMs) based upon a fluorene core. Using a fluorene core, rather than a biphenyl group, leads to enhanced thermal stability, as evidenced by glass‐transition (T_g) temperatures as high as 161 °C for N,N′‐iminostilbenyl‐4,4′‐fluorene (ISF). The fluorene‐based HTMs have lower ionization potentials (I_p) than their biphenyl analogs, which leads to more efficient injection of holes from the indium tin oxide (ITO) anode, and higher quantum efficiencies. Devices prepared with fluorene‐based HTMs were operated under thermal stress. The failure of an organic light‐emitting diode (OLED) under thermal stress has a direct correlation with the thermal stability of the HTM that is in contact with the ITO anode. OLEDs based on ISF are stable to over 140 °C.     

Characterization of current transport in ferroelectric polymer devices

We report the charge injection characteristics in poly(vinylidene fluoride-trifluoroethylene), P(VDF-TrFE), as a function of electrode material in metal/ferroelectric/metal device structures. Symmetric and asymmetric devices with Al, Ag, Au and Pt electrodes were fabricated to determine the dominant carrier type, injection current density, and to propose transport mechanisms in the ferroelectric polymer. Higher work function metals such as Pt are found to inject less charges compared to lower work function metals, implying n-type conduction behavior for P(VDF-TrFE) with electrons as the dominant injected carrier. Two distinct charge transport regimes were identified in the P(VDF-TrFE) devices; a Schottky-limited conduction regime for low to intermediate fields (E < 20 MV/m), and a space-charge limited conduction (SCLC) regime for high fields (20 < E < 120 MV/m). Implication of these results for degradation in P(VDF-TrFE) memory performance are discussed.