Multi-factor cheating prevention in visual secret sharing by hybrid codebooks

Visual secret sharing, or the so-called visual cryptography, is a well-known scheme that encrypts a secret image into several meaningless share images, usually printed on transparencies, and decrypts as stacking some or all share images by the human visual system. More and more researches about visual secret sharing and its applications have been recently proposed. Unfortunately, the cheating attack in which malicious participants cheat the honest one(s) by forging a fake share image has existed. Since 2006, some cheating prevention schemes have been proposed but suffered from one or more disadvantages as follows: (1) maintaining extra share images used to verify the integrity of a share image prior to stacking, (2) introducing extra pixel expansion, (3) raising heavy computation cost, and (4) giving ambiguous cheating detection. In this paper, a multi-factor cheating–preventing scheme, aiming at exploiting the hybrid codebook to hide the additional verification images into the share images, has been proposed without suffering the above-mentioned deficiencies. Two-factor cheating–detection exploits the design of verification to both share images and stacked results to deter attackers’ cheating. The experimental results demonstrate the proposed scheme is feasible.     

User scheduling based on angles with block diagonalization in MU‐MIMO broadcast

This paper investigates user selection scheme in the multiuser multiple‐input multiple‐output (MU‐MIMO) broadcast (BC) scene with block diagonalization precoding. Block diagonalization is a suboptimal but practical linear precoding method, which can eliminate the multiuser interference by turning the MU‐MIMO BC channel into parallel MIMO channels. With this precoding method, we propose the best user from the user subset to maximize the total throughput in the MU‐MIMO BC system. The angles between subspaces used in this paper are induced from n ‐inner product, an extension from norm space to the n ‐dimensional space, which characterizes the orthogonality between subspaces. One of the algorithms achieves good performance by comparing the capacity greedily, the other one attains high capacity by reducing the cardinality of the user subset to improve the orthogonality between the user channels, which could be seen as a complexity reduction algorithm with respect to the former one. Indeed, they are all based on the angles between subspaces. Analysis shows that both of the proposed algorithms have lower complexity and better performance than the classical algorithms. The numerical results also confirm our analysis.     

渡河问题的矩阵表示与迭代算法

为解决较复杂的渡河问题,提出用构建岸态矩阵来表示求解过程中左右河岸上同一时刻的人员组合状态;并引入表征小船上人员状况的摆渡算子,则问题的求解过程就可用从始点状态向着目标状态的逐次迭代来表示;而约束条件则由岸态矩阵的生成及算子的选取来实现。同时对运载能力n的取值范围作了较深入的讨论,并用图解算例加以验证。     

WLAN（802.11n）组网技术研究

对802.11n关键技术进行分析,并讨论了在组网方案、网络布署、有线网络资源需求、电源配套等方面如何利用802.11n设备组成一个建设高性能的WLAN网络。     

n-on-p结构深台面延伸波长InGaAs探测器的ICPCVD钝化工艺

采用ICP刻蚀(inductively coupled plasma etching)工艺制备了深台面n-on-p结构的可响应到2.4μm的延伸波长8×1元线列In Ga As探测器.器件表面采用ICP源激发的N2等离子体进行处理,然后再使用ICPCVD(inductively coupled plasma chemical vapor deposition)沉积一层Si Nx薄膜的钝化工艺.不同面积光敏元器件的电流—电压特性分析显示器件在常温和低温下侧面电流均得到有效抑制,激活能分析显示了器件优异的暗电流特性,在-10 m V偏压下,在200 K和300 K温度下暗电流密度分别为94.2 n A/cm2和5.5×10-4A/cm2.     

Progress on large area n‐type silicon solar cells with front laser doping and a rear emitter

We report on the progress of imec's n‐type passivated emitter, rear totally diffused rear junction silicon solar cells. Selective laser doping has been introduced in the flow, allowing the implementation of a shallow diffused front surface field and a reduction of the recombination current in the contact area. Simplifications have been implemented towards a more industrial annealing sequence, by replacing expensive forming gas annealing steps with a belt furnace annealing. By applying these improvements, together with an advanced texturing process and emitter passivation by atomic layer deposition of Al₂O₃, 22.5% efficient cells (three busbars) have been realized on commercial 156 · 156 mm² Czochralski‐Si. This result has been independently confirmed by ISE CalLab. Copyright © 2016 John Wiley & Sons, Ltd.     

用信流图法设计n阶CCⅡ电流模式滤波器

提出了用信流图设计ｎ阶ＣＣⅡ（第二代电流传输器）电流模式低通滤波器的方法。该滤波器由具有双输出端的第二代电流传输器（ＣＣⅡ±）和同相第二代电流传输器（ＣＣⅡ＋）及接地ＲＣ元件构成。与同类电路［４］比较,设计更简便,结构更简单。ＲＣ元件全部接地,便于集成。     

低频Alfvén波谱与冷等离子体的非共振作用研究

本文讨论了低频率Alfvén波谱与冷等离子体的非线性相互作用。研究表明,对于多个低频Alfvén波,在波的振幅相对于背景磁场较小时,随着时间的增加,粒子动理学温度的各向异性会降低;随着振幅的增加,平行方向的动理学温度不断升高,且在A2=0.1处,平行方向的动理学温度将超过垂直方向的动理学温度。     

Restorable Type Conversion of Carbon Nanotube Transistor Using Pyrolytically Controlled Antioxidizing Photosynthesis Coenzyme

Here, a pyrolytically controlled antioxidizing photosynthesis coenzyme, β‐Nicotinamide adenine dinucleotide, reduced dipotassium salt (NADH) for a stable n‐type dopant for carbon nanotube (CNT) transistors is proposed. A strong electron transfer from NADH, mainly nicotinamide, to CNTs takes place during pyrolysis so that not only the type conversion from p‐type to n‐type is realized with 100% of reproducibility but also the on/off ratio of the transistor is significantly improved by increasing on‐current and/or decreasing off‐current. The device was stable up to a few months with negligible current changes under ambient conditions. The n‐type characteristics were completely recovered to an initial doping level after reheat treatment of the device.     

Salt‐Assisted Growth of P‐type Cu9S5 Nanoflakes for P‐N Heterojunction Photodetectors with High Responsivity

P‐n junctions based on two dimensional (2D) van der Waals (vdW) heterostructure are one of the most promising alternatives in next‐generation electronics and optoelectronics. By choosing different 2D transition metal dichalcogenides (TMDCs), the p‐n junctions have tailored energy band alignments and exhibit superior performance as photodetectors. The p‐n diodes working at reverse bias commonly have high detectivity due to suppressed dark current but suffer from low responsivity resulting from small quantum efficiency. Greater build‐in electric field in the depletion layer can improve the quantum efficiency by reducing recombination of charge carriers. Herein, Cu₉S₅, a novel p‐type semiconductor with direct bandgap and high optical absorption coefficient, is synthesized by salt‐assisted chemical vapor deposition (CVD) method. The high density of holes in Cu₉S₅ endows the constructed p‐n junction, Cu₉S₅/MoS₂, with strong build‐in electric field according to Anderson heterojunction model. Consequently, the Cu₉S₅/MoS₂ p‐n heterojunction has low dark current at reverse bias and high photoresponse under illumination due to the efficient charge separation. The Cu₉S₅/MoS₂ photodetector exhibits good photodetectivity of 1.6 × 10¹² Jones and photoresponsivity of 76 A W^?1 under illumination. This study demonstrates Cu₉S₅ as a promising p‐type semiconductor for high‐performance p‐n heterojunction diodes.