Tribology of nitriding layer, TiN coatings and their complex on AISI D2 steel

The sliding wear and impact wear resistances of D2 steel with nitriding layer, PVD titanium nitride coating and their duplex treatment were investigated. The experimental results suggest that the duplex treatment has the best sliding and impact wear resistances under experimental conditions. And the wear resistance of PVD titanium nitride is better than that of nitriding. The impact wear resistance and wear mechanism of all three surface layers remain unchanged under impact load of 0.2 J or 1 J. All samples end with the same symptom of flaking.     

Heat transfer in YBaCuO thin film/sapphire substrate system

The thermal boundary resistance at the YBaCuO thin film/Al₂O₃ substrate interface was investigated. The transparency for thermal phonons incident on the interface as well as for phonons moving from the substrate was determined. We have measured a transient voltage response of current-biased films to continuously modulated radiation. The observed knee in the modulation frequency dependence of the response reflects the crossover from the diffusion regime to the contact resistance regime of the heat transfer across the interface. The values of transparency were independently deduced both from the phonon escape time and from the time of phonon return to the film which were identified with peculiarities in the frequency dependence. The results are much more consistent with the acoustic mismatch theory than the diffuse mismatch model.We are grateful to A. Elantev for helpful discussion. We acknowledge the financial support of the Russian Scientific Council on the HTS problem (Project No. 90462).     

Measuring the load eccentricity in helical compression springs

An experimental device able to detect the load eccentricity in helical compression springs is described. The theory underlying the resolution of measured bending strains of the apparatus into effective load eccentricity is discussed. Laboratory results are offered for heavy duty springs and compared to theoretical estimates retrieved from the literature.     

一个高电阻值测量电路

介绍一种新的高阻测试方法，可满足对高达１×１０＾１６Ω的测试要求。测试结果显示，对于１×１０＾１３Ω重复误差优于±２％。高阻测试电路通过接口与６８０９微机配套使用，操作简便，读数直观，便于长时间重复测量。     

黄河淤积粉土的两种复合稳定方案与性能对比

为探索路基工程中黄河淤积粉土的稳定技术和性能保障方案,针对德州齐河县境内的黄河淤积粉土,在乳化沥青复合稳定粉土(AE稳定土)的研究基础上,采用无机/有机复合材料制备出一种复合固化剂(FG固化剂),研究了AE稳定土和FG稳定土2种稳定方案下粉土的抗压强度性质、水稳定性和抗冻融能力;结合XRD、SEM表征技术,探讨了FG固化剂的稳定机理。研究认为,FG固化剂稳定土较AE稳定土有着更高的无侧限抗压强度、回弹模量和承载能力,水稳定性良好,在抗冻融能力上有着比AE稳定土更好的效果。XRD与SEM分析表明,FG固化剂提供了活性矿物质,其复合胶凝效应和填充增强保障了粉土的抗压强度,高分子物质起到粘结颗粒界面、填塞孔隙的作用,降低了内部孔隙率;两者造成土体的最大干密度变大;与AE稳定土的稳定机理不同。FG固化剂的使用为黄河粉土的稳定和工程应用提供了参考方法。     

盾构管片衬砌吊装孔预埋件抗拔力试验初探

新版盾构法隧道施工及验收规范已于2017年7月实施,新规范中增加了对管片吊装孔预埋件“设计无要求时,抗拉拔力不应低于管片自重的7倍”的要求,对比之前常规5tf地铁管片设计采用的25tf,相当于提高了40%。文章依据管片预埋吊装孔抗拔力涉及的几种国家标准、行业规范,对几种抗拔试验进行了对比,参照ABAQUS有限元软件数值模拟法,论述了管片吊装孔预埋件抗拔力试验应注意的一些事项,为类似管片抗拔试验提供一些参考资料。     

避雷器接地电阻的测量与预测方法

介绍了避雷器三极法测量接地电阻的接线、测量原理及测量电压的选取,根据测得的历史数据建立了基于回归分析的接地电阻变化趋势预测模型,并通过标准离差检验证明了该预测模型可用于实际接地电阻的预测。实践表明,该测量与预测方法切实可行,能在一定程度上避免因接地电阻超标而引发的雷击事故。     

液压支架工作状态模糊识别系统研究

针对目前综采工作面液压支架压力监测系统只能监测综采工作面压力,不能对液压支架工作状态进行识别的问题,设计了一种液压支架工作状态模糊识别系统。该系统可对现有的综采工作面液压支架压力监测系统监测到的压力数据进行模糊识别,根据模糊识别输出值即可判断液压支架的5种工作状态,即降架、移架、升架、增阻、卸压保持;当液压支架处于增阻工作状态且增阻时间过长时,该系统可及时通知液压支架操作工增大液压支架压力,辅助实现顶煤破碎。测试结果验证了该系统的可行性。     

Influence of base resistance on extracting thermal resistance for SiGe HBTs

In this article, the influence of base resistance on extracting thermal resistance for SiGe heterojunction bipolar transistors is studied and an improved approach for determining the junction temperature and thermal resistance is presented. The proposed method for extracting thermal resistance is based on the temperature sensitivity of the base–emitter (B–E) voltage when the device is biased with a fixed emitter current density. This approach not only takes into account the self‐heating during the different ambient temperature measurement but also revises the empirical equation of B–E voltage due to the influence of base resistance during the power dissipation increment measurement. Results are obtained for devices with different emitter lengths and fingers. Compared with the conventional method, the thermal resistance is about up to 15% improvement for the device with 0.3 × 1.9 μm² emitter area and 13.8% for the device with 0.3 × 13.9 μm² emitter area. The accurate thermal resistance implemented in HICUM model has resulted in better fit for transistor output characteristics. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2012.