高压直流接地极对埋地管道的电流干扰及人身安全距离

高压直流输电系统的直流接地极在运行初期或发生故障和检修时,会产生瞬间大电流,给附近埋地油气管道设施及操作人员带来极大的安全隐患。为了保障埋地管道附近人员的安全,对高压直流接地极对埋地管道的电流干扰及人身安全距离(以下简称安全距离)进行了研究。首先利用数值模拟技术建立了埋地管道受电磁干扰的模型,进而利用该模型计算了不同土壤电阻率、管线长度、管道防腐层、接地极入地电流、管道尺寸等情况下,高压直流接地极对埋地管道杂散电流干扰的安全距离,并分析了上述条件对高压直流接地极干扰程度的影响规律。研究结果表明:①管线长度对高压直流接地极干扰程度的影响较大,管线越长,安全距离越大,但当管线长度达到或超过600 km时,安全距离则基本不变;②管线涂层对高压直流接地极干扰程度的影响较大,随着涂层面电阻率的增加,安全距离逐渐增大;③对于多层土壤结构,可将最大的单层电阻率作为整体电阻率,其计算得到的安全距离最大,评价结果也更为保守。结论认为,利用计算结果得到的4类长度管线的安全距离图谱,可供高压直流接地极及管线设计时参考,并且可以作为拟建高压直流接地极或埋地管线安全距离选取的依据。     

Electrical Resistivity of Composites

Percolation and Bruggeman's effective media theories, as they apply to the electrical conductivity of composites, are reviewed, and a general effective media (GEM) equation, which combines most aspects of both percolation and effective media theories, is introduced. It is then shown that the GEM equation quantitatively fits electrical resistivity (conductivity) as a function of the volume fraction data for binary composites. The parameters used to fit the experimental data are the electrical resistivities of the two phases, the percolation threshold for the lower resistivity phase (ô _c ), and an exponent t. Preliminary work, showing how the GEM equation can be used to model the piezoresistivity of composites by postulating that ô _c is a function of the independent variable, is also presented.     

Low resistivity as-deposited ohmic contacts to 3C-SiC

The contact resistivities of Al and Ti ohmic contacts to n-type 3C-SiC were measured using the circular TLM method. The surface doping concentration under the contact was increased by ion-implantation of nitrogen into SiC. The contact resistivity was observed to decrease with increasing surface doping concentration for both Al and Ti contacts. The minimum value for the contact resistivities for Aland Ti contacts was 1.4x 10^-5and 1.5 x 10^-5 ω cm², respectively, at the surface doping concentration of 3 x 10²⁰ cm^-3 without any annealing of the contacts. These values are an order of magnitude lower than previously reported minimum values for as-deposited ohmic contacts on n-type 3C-SiC.     

Residual strain and electrical resistivity dependence of molybdenum films on DC plasma magnetron sputtering conditions

Sputter deposited molybdenum (Mo) thin films are used as back contact layer for Cu(In_1−xGa_x)(Se_1−yS_y)₂ based thin film solar cells. Desirable properties of Mo films include chemical and mechanical inertness during the deposition process, high conductivity, appropriate thermal expansion coefficient with contact layers and a low contact resistance with the absorber layer. Mo films were deposited over soda-lime glass substrates using DC-plasma magnetron sputtering technique. A 2³ full factorial design was made to investigate the effect of applied power, chamber pressure, and substrate temperature on structural, morphological, and electrical properties of the films. All the films were of submicron thickness with growth rates in the range of 34–82 nm/min and either voided columnar or dense growth morphology. Atomic force microscope studies revealed very smooth surface topography with average surface roughness values of upto 17 nm. X-ray diffraction studies indicated, all the films to be monocrystalline with (001) orientation and crystallite size in the range of 4.6–21 nm. The films exhibited varying degrees of compressive or tensile residual stresses when produced at low or high chamber pressure. Low pressure synthesis resulted in film buckling and cracking due to poor interfacial strength as characterized by failure during the tape test. Measurement of electrical resistivity for all the films yielded a minimum _value of 42 μΩ cm for Mo films deposited at 200 W DC power.     

Si_3N_4在BaTiO_3基低阻高性能PTCR陶瓷材料中的作用

要同时保证 PTCR材料和元件具有低室温电阻率和较高的 PTC特性 ,有较大难度。研究了添加 Si3N4作为烧结助剂 ,对 PTCR材料的显微结构和电学性能的影响。同添加 Si O2 作为烧结助剂相比 ,添加 1.0 %的 Si3N4的 PTCR材料更易同时满足低阻高性能要求。     

AN EFFICIENT NUMERICAL MODELING OF THE DC RESISTIVITY LOGGING: THEORY AND APPLICATIONS

The numerical solution of Green's function for the potential in 2-D arbitrary in-homogeneous media with axial symmetry has been given by use of efficient half-analytical, half-numerical hybrid method. Then the logging responses of various kinds of the DC resistivity log with axisymmetric excitation have been obtained by using surface integral equation method to match the boundary conditions on the electrodes of the logging sonde. Comparing the results with that obtained by other methods, one can see good precision and efficiency of the given method. Some applications of the numerical modeling have been also discussed.     

化学溶液分解法制备LaNiO3薄膜的研究

采用化学溶液分解法直接在单晶Si(100)衬底上制备了LaNiO3薄膜，研究了不同热处理气氛(空气和氧气)对薄膜的结晶性、晶粒尺寸、电阻率以及其上面生长的锆钛酸铅(PZT)薄膜的影响．结果发现二种气氛得到的LaNiO3薄膜的电阻率相差较大，其中在氧气中制备的薄膜电阻率仅为在空气中得到的1／2．对LaNiO3薄膜的导电机制进行了讨论．     

铜粉添加量对铜酚醛树脂导电油墨性能的影响

以微米级铜粉为导电填料、酚醛树脂为粘接剂制备了导电油墨,并将该油墨以聚酰亚胺薄膜为基底,采用丝网印刷技术制备导电涂层。研究了铜粉添加量对铜酚醛树脂导电油墨的黏度、固含量以及导电涂层的微观形貌、电阻率和附着力的影响。研究表明,当铜粉添加量质量分数为70%时,制备的铜酚醛树脂导电油墨具有良好的性能,该导电油墨经丝网印刷得到的导电铜膜经低温固化后具有良好的电性能,其电阻率最低可以达到53.865×10–3Ω·cm。     

Sr_(1-x)Ba_xBi_4Ti_4O_(15)铁电陶瓷性能研究

采用传统固相反应法制备了Sr1–xBaxBi4Ti4O15(x=0～1.0)铁电陶瓷,研究了Ba取代量对其烧结性能和介电性能的影响。结果表明,适量Ba取代促使陶瓷样品烧结温度由1240℃降至1130℃左右,tanδ降至20×10–4,体积电阻率ρv提高一个数量级,同时居里峰显著展宽,居里温度tC下降。当x=0.7时,在1130℃烧结6h获得的陶瓷样品综合介电性能较好:εr≈150,tanδ=53×10–4,ρv=1.7×109Ω·m,tC≈430℃。