乘累加运算器的高性能解决方案

在设计数字信号处理器时我们经常要设计高性能的乘累加运算器，文章详细分析了乘累加运算器的结构，提出了其高性能设计方案并采用标准单元进行了实现，同时提出了DCT运算单元的高性能解决方案。     

激光冶炼太阳级硅材料的实验研究

通过实验研究表明，大功率ＣＯ２激光器在廉价硅材料制备中应用的可能性。     

Mixed Mode VLSI Implementation of a Neural Associative Memory

A mixed mode digital/analog special purpose VLSI hardware implementation of an associative memory with neural architecture is presented. The memory concept is based on a matrix architecture with binary storage elements holding the connection weights. To enhance the processing speed analog circuit techniques are applied to implement the algorithm for the association. To keep the memory density as high as possible two design strategies are considered. First, the number of transistors per storage element is kept to a minimum. In this paper a circuit technique that uses a single 6-transistor cell for weight storage and analog signal processing is proposed. Second, the device precision has been chosen to a moderate level to save area as much as possible. Since device mismatch limits the performance of analog circuits, the impact of device precision on the circuit performance is explicitly discussed. It is shown that the device precision limits the number of rows activated in parallel. Since the input vector as well as the output vector are considered to be sparsely coded it is concluded, that even for large matrices the proposed circuit technique is appropriate and ultra large scale integration with a large number of connection weights is feasible.     

用化学腐蚀制备多孔硅太阳电池减反射膜的研究

采用HF HNO3溶液化学腐蚀 ,在硅片上制备减反射效果优良的多孔硅太阳电池减反射膜 ,借助原子力显微镜 (AFM)和X光电子谱 (XPS)对其表面形貌和成分进行观察 ,发现该膜与电化学阳极腐蚀得到的多孔硅具有相似性 ,其主要成分为非化学配比的硅的氧化物SiOx(X <2 )。采用带积分球的光度分光计 ,测得形成多孔硅减反射膜后 ,硅片表面反射率大大下降 ,,在波长 330～ 80 0nm范围反射率只有 1 5～ 2 9%。研究指出这种强减反射作用 ,与多孔硅具有合适的折射率及其多孔特性的光陷阱作用有关     

软X射线对血液有形成分表面电荷的影响——2、淋巴细胞和血小板膜电荷的变化

软X射线不仅能引起红细胞表面电荷的变化,同时也能导致淋巴细胞和血小板表面电荷下降,表现为照射后它们的电泳率下降。低剂量范围内,这种电荷的变化是暂时性的,照后4小时降到最低点,24小时后恢复到对照的水平。细胞电泳率的下降与辐射剂量相关。淋巴细胞是一个复杂的细胞群,正常状态下,按细胞在电场中泳动速度的快慢,可分为两个组分:快峰为T细胞,慢峰为B细胞。软X射线照射以后,T和B细胞的电泳率皆减慢,频数分布峰值下降,离散度加大。血小板成分单一,电泳率较一致。 从照射浓集的血小板再加回自身血浆中电泳率的下降较照射血浆再加到血小板中的电泳率下降大得多;受照射的血小板在磷酸缓冲液中电泳率下降较在血浆悬液中严重得多;2000 rad照后,悬浮于血浆中的血小板电泳率能恢复,而悬浮于磷酸缓冲液中则不能恢复,三个方面来看,血浆中可能存在抗辐射因子。超氧化物岐化酶能有效地预防血小板电泳率的下降,从而可阻止血小板的凝聚。     

Ruthenium dye-sensitized SnO2/TiO2 coupled solar cells

The photoelectrochemical behaviors of RuL₂(NCS)₂ dye-sensitized SnO₂/TiO₂ coupled solar cell was studied and compared with TiO₂ single system. The coupled system shows higher incident photon-to-current conversion efficiency (IPCE) value than the single system. A maximum IPCE value in the coupled system with 3.5 μm-thick SnO₂ and 7 μm-thick TiO₂ attained 82.4% at 530 nm wavelength. The higher IPCE value in the coupled system is attributed to the charge separation by fast electron transfer process from the excited RuL₂(NCS)₂ dye to TiO₂ to SnO₂ in the system with different energy level.     

A new method for manufacturing nanostructured electrodes on glass substrates

The present paper describes a new method for manufacturing a nanostructured porous layer of TiO₂ on a conducting glass substrate for use in a dye-sensitized photoelectrochemical cell. The method involves deposition of a layer of semiconductor particles onto a conducting substrate and compression of the particle layer to form a mechanically stable, electrically conducting, and porous nanostructured film at room temperature. Photoelectrochemical characteristics and morphology of the resulting nanostructured films are presented. The potential use of the new manufacturing method in the future applications of nanostructured systems is discussed.     

Influence of the intrinsic layer characteristics on a-Si:H p–i–n solar cell performance analysed by means of a computer simulation

In this paper a set of one-dimensional simulations of a-Si:H p–i–n junctions under different illumination conditions and with different intrinsic layer are presented. The simulation program ASCA permits the analysis of the internal electrical behaviour of the cell allowing a comparison among the different internal configurations determined by a change in the input set. Results about the internal electric configuration will be presented and discussed outlining their influence on the current tension characteristic curve. Considerations about the drift–diffusion and the generation–recombination balance distributions, outlined by the simulation, can be used to explain the correlation between the basic device output, the i-layer characteristics (thickness and DOS), the incident radiation intensity and photon energy.     

浅析6063铝型材表面“铝丝印”的成因与对策

在介绍“铝丝印”概念的基础上，从金属腐蚀学的观点出发，分析了“铝丝印”形成的电化学腐蚀机理，并提出了具体的解决措施。     

氯碱电解槽槽电压构成现状与进展

依据槽电压构成的诸多因素,介绍了目前槽电压构成的现状和进展。