Quantum dot integration in heterostructure solar cells

InAs self-assembled quantum dots (SA-QDs) were incorporated into GaAlAs/GaAs heterostructure for solar cell applications. The structure was fabricated by molecular beam epitaxy on p-GaAs substrate. After the growth of GaAs buffer layer, multi-stacked InAs QDs were grown by self-assembly with a slow growth rate of 0.01 ML/s, which provides high dot quality and large dot size. Then, the structure was capped with n-GaAs and wide band gap n-GaAlAs was introduced. One, two or three stacks of QDs were sandwiched in the p–n heterojunction. The contribution of QDs in solar cell hetero-structure is the quantized nature and a high density of quantized states. I–V characterization was conducted in the dark and under AM1 illumination with 100 mW/cm² light power density to confirm the solar cell performance. Photocurrent from the QDs was confirmed by spectral response measurement using a filtered light source (1.1-μm wavelength) and a tungsten halogen lamp with monochromator with standard lock-in technique. These experimental results indicate that QDs could be an effective part of solar cell heterostructure. A typical I–V characteristic of this yet-to-be-optimized solar cell, with an active area of 7.25 mm², shows an open circuit voltage V_oc of 0.7 V, a short circuit current I_sc of 3.7 mA, and a fill factor FF of 0.69, leading to an efficiency η of 24.6% (active area).     

连续法生产冷库板用组合聚醚的研制

针对国内板材厂家提出用连续法生产厚度在150 mm以上冷库板的要求,通过对聚醚体系、催化体系、发泡体系等进行调整,得到了适合于连续法生产厚度在150 mm以上冷库板的组合料,并成功地用于200 mm厚冷库板的连续化生产,未出现烧心开裂、变形等问题.     

High-performance carbon counter electrode for dye-sensitized solar cells

Here, we reported that a new carbon electrode prepared with an activated carbon was superior to a Pt sputtered electrode as the counter electrode of dye-sensitized solar cells. The photovoltaic performance was largely influenced by the roughness factor of carbon electrode. The open-circuit voltage increased by about 60 mV using the carbon counter electrode compared to the Pt counter electrode because of positive shift of the formal potential for I₃⁻/I⁻ couple.     

白云鄂博主矿开拓运输工艺转换有关问题的探讨

本文对白云鄂博主矿采场铁公路联合运输向公路运输转换位置是否确定为1638m水平以及运输工艺转换过程中相关问题进行分析论证，提出主矿采场铁路至少可向下延深一个水平，技术上可行，节约运费千万元以上。     

CdTe-CdS solar cells — Production in a new baseline and investigation of material properties

In this paper, we describe our new baseline for CSS-CdTe-CdS solar cells on 10 × 10 cm² substrates. The deposition of the p-n junction and all the following steps were performed at the Institut für Festkörperphysik (IFK) in Jena. Using the new baseline, we are already able to produce solar cells with similar properties as commercial ones. In the batch type process, all manufacturing steps can be investigated separately. We employ Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and external quantum efficiency (EQE) measurements to characterise the structure of the bulk materials and interfaces. It is demonstrated that by RBS the front contact becomes accessible for thinned CdTe films. At the back contact, RBS spectra show a tellurium accumulation which is due to etching. This tellurium rich layer is confirmed by XRD with Rietveld refinement. The intermixing at the CdS-CdTe interface caused by the activation step is quantified by a bandgap determination based on EQE measurements. From the bandgap energy of the CdTe_1 − xS_x compound, we calculated the sulphur fraction x at the interface. XRD measurements imply that the activation step induces a (111) texture in CdTe. With regard to an improved manufacturing process, our cells are compared to industrial cells produced by Antec Solar Energy.     

Space-charge-limited currents for organic solar cells optimisation

Basic suppositions and microphysical origin of the occurrence of the space-charge-limited currents (SCLC) are presented in general and for the temperature-modulated space-charge-limited currents (TM-SCLC) in particular. The criteria are given for the spectroscopical method TM-SCLC to be used for localized electron states elucidation in organic semiconducting materials for organic solar cells optimization and modelling. The “visibility “of the localized states by SCLC method, i.e. the power of the SCLC method to distinguish the localized states, is tested by the modelling, varying the temperature, energy position of localized states and their concentration. Generally, it was determined that the SCLC measurements results are more reliable with the increased energy of the states, with their increased concentration and with decreased temperature. The correlation (or its absence) between the measured current and activation energy on applied voltage, expressed by the dependence of preexponential factor of conductivity on activation energy (Meyer–Neldel rule), gives the possibility to determine the energy range where the reconstruction of density of localized states function is reliable.     

Characterization of microspherical semi-transparent solar cells and modules

Microspherical solar cells and modules have been fabricated. The spherical nature of these semi-transparent devices allows the microspherical cells to harvest both directly incident and diffuse components of sunlight thereby improving the solar energy conversion efficiency. Indoor and outdoor characterizations of these three dimensional semi-transparent cells and modules are carried out using a Lambertian reflector in order to assess the maximum efficiency of the devices. In the absence of the reflector the cell efficiency is 13.5% under standard illumination (100 mW cm⁻², A.M. 1.5, 25 °C). However, this is significantly enhanced in the presence of the reflector. Microspherical modules with the reflector are directly compared to similar semi-transparent modules comprised of traditional planar devices, in outdoor tests at low light intensity (2.5–25 mW cm⁻²) to further demonstrate the benefits of the design particularly at low angle of incident radiation.     

光柱显示技术探讨

本文叙述自动化仪表用光柱显示技术的工作原理及器件结构，重点论述直流等离子体光柱，发光二极管光柱，真空荧光及液晶光柱器件的结构和驱动电路，还展望光柱显示的发展趋势。     

Phase relations in the system ln-CulnS2

By DTA and x-ray diffraction the phase relations in the pseudobinary system In-CuInS₂ have been investigated. CuInS₂ hs a melting point of 1090° C and within this system there is a broad region of liquid immiscibility. A four phase invariant reaction exists at 633° C which is of the form: L₂ = L₁+ CuInS₂ + InS.     

气囊内模制作桥面板在华丰湾防洪工程中的应用

采用气囊作内模进行浇筑桥面板混凝土 ,加快了预制桥面板施工进度 ,确保工程施工质量 ,并降低了工程施工成本