Low temperature synthesis of aluminium titanate by an aqueous sol-gel route

Formation of aluminium titanate (AT) has been achieved at low temperature through sol-gel process using boehmite and titanium hydroxide as precursors by controlling the particle size at nanoscale followed by in-situ peptisation. The formations of AT phase, particle size distributions, sintering and thermal expansion characteristics, and microstructural features have been reported. DTA and XRD analysis have been performed to confirm the formation of AT. A 94% relative density was obtained for aluminium titanate sintered at 1550 °C with controlled grain size in the range of 2-3 μm.     

Growth of β-FeSi2 layers deposited from a molten salt

β-FeSi₂ layers have been successfully grown using a molten salt method for the first time. It was found that single phase and homogeneous β-FeSi₂ layers with a columnar domain structure can be grown on FeSi substrates. The layer thickness was demonstrated to be controllable by the growth temperature and time, and was diffusion controlled. It was shown that the layers were void- and crack-free compared to similar layers grown on Fe substrates: this difference is explained in terms of Fe diffusion. This vacuum-free simple growth technique is useful for the fabrication of large area semiconductor devices at low cost.     

Effect of Y2O3, CeO2 on Sintering Properties of Si3N4 Ceramics

The effect of rare earth oxides Y203 or Ce02 on sintering properties of Si3N4 ceramics was studied and the mechanism of assisting action during sintering was analyzed. The results in dicate that the best sintering properties appear in Si3N4 ceramics with 5% Y203 or 8% CeO2. Secondary crystallites are formed at grain boundaries after heat treatment,which decreases the amount of glass phase and contributes to the improvement of high-temperature mechanical properties of silicon nitride.     

Passivation effects of deuterium exposure on boron-doped CVD homoepitaxial diamond

The deuterium (hydrogen) passivation effect on acceptors in boron-doped CVD homoepitaxial diamond was studied by electrical (Hall-effect) and secondary ion mass spectroscopy (SIMS) measurements. Deuterium was incorporated into the samples using microwave (MW) deuterium plasma at 673 K for 2–24 h. We observed the progress of acceptor passivation with p-type conduction, which finally resulted in a highly resistive state.     

关于重力坝坝内细部构造设计的几个问题

重力坝常采用横，纵缝将坝体分为柱状体施工。为此，横缝须设置止水，纵缝则待坝体冷却后灌浆，将柱状坝块连成整体。此外坝体内部还须设置坝面排水管以消除坝内渗透压力。关于坝内这些细部构造，设计规范仅有原则性要求，一般专业书列举不多，目前有些工程往往参照已建工程的设计图采用，常由于施工详图不祥易发生施工质量问题。根据丹江口重力坝设计经验，对接缝灌浆中的键槽，止浆片，灌浆管道，出浆盒，排气槽及排气管，基岩陡坡     

Electrical/electronic effects of titanium and iron impurities in EFG and FZ solar cell silicon: SPV/EBIC analysis

In this paper results on surface photovoltage (SPV) and electron beam induced conductivity (EBIC) studies of edge-defined film-fed growth (EFG) and floating zone (FZ) silicon solar cell materials (both p-type) are presented. A systematic comparison based on minority carrier diffusion length and carrier recombination is made between: (i) samples contaminated with Ti and/or Fe, (ii) samples gettered by phosphorous diffusion, and (iii) as-received samples. Deep level transient spectroscopy (DLTS) measurements, together with the iron-boron (FeB) pairing kinetics [1] have successfully been used to detect the presence of Fe in the samples. Even though this process is effective in revealing Fe impurities in p-type FZ silicon it is evidently not suitable for Fe identification in p-type EFG silicon. Ti, like Fe, is found to be a prominent lifetime-limiting metallic impurity in both EFG and FZ silicon. Phosphorous diffusion is proven to be an effective external gettering technique for fast-diffusing impurities such as Fe, but not for Ti.     

WC对Cu/WC_P复合材料性能及组织的影响

通过ＷＣ含量对ＷＣ／Ｃｕ复合材料性能的影响，确定了冷压－烧结法制备Ｃｕ／ＷＣ材料的适宜ＷＣ含量为１０ｖｏｌ％左右。并就ＷＣ对该材料组织和再结晶行为的影响进行了有益的探讨。