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161.
Thermal stratification in a mantled hot water storage tank is analysed numerically for different water inlet velocities. The aim is to obtain higher thermal stratification and supply hot water for usage as long as possible. Twelve different water inlet velocities to the hot water storage tank are considered. The numerical method is validated by comparing its results against experimental and numerical results from the literature. It turned out that the results obtained from the numerical analysis have shown very good agreements with the results from previous works. As a result, the water temperature in the tank increases with the increase of the water inlet velocities to the mantle but this increment is not proportional. After a period of operation of 7.2 h, which corresponds to the average sunshine duration in Turkey, temperature increments of 6.5 and 35 K have been estimated for the hot water inlet velocities of 0.01 and 0.3 m s?1, respectively, at a radial distance of 0.1 m and a height of 1 m inside the storage tank. Copyright © 2005 John Wiley & Sons, Ltd. 相似文献
162.
163.
Rui Morimoto Chisato Yokomori Akiko Kikkawa Akira Izumi Hideki Matsumura 《Thin solid films》2003,430(1-2):230-235
In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiNx films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O2 oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiNx prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiNx films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm−1 of OFF leakage current and ON/OFF ratio of 107–108 are realized, i.e. the devices can operate similarly to conventional thermal CVD process. 相似文献
164.
超Jaynes一Cummings模型中的两能级原子置于热辐射场。通过求解原子与热辐射场相互作用过程中原子约化密度算符非对角元.精确得出子原子相干性的衰变规律。研究了在相互作用系统中外加驱动场时可保持原子的相干性,此时外加驱动场的时间演化与原子的跃迁频率、原子偶极矩、热库的温度和k模光子频率等因素有关。 相似文献
165.
166.
为解决鱼雷捷联系统的初始对准,提出了失准角及陀螺随机常值漂移快速估计方法,经数字仿真,对缩短初始对准时间,提高初始对准精度有较好的效果。 相似文献
167.
J. C. Jones H. Rahmati T. D. H. Do 《Journal of chemical technology and biotechnology (Oxford, Oxfordshire : 1986)》1992,54(4):317-318
Wood shaving samples were heated in both cubic baskets and in a previously described system realising the conditions of the ‘infinite slab’ in thermal ignition. Results from the two sets of experiment were found to be totally consistent with each other. 相似文献
168.
169.
Thermal Shock Behavior of Porous Silicon Carbide Ceramics 总被引:1,自引:0,他引:1
Using the water-quenching technique, the thermal shock behavior of porous silicon carbide (SiC) ceramics was evaluated as a function of quenching temperature, quenching cycles, and specimen thickness. It is shown that the residual strength of the quenched specimens decreases gradually with increases in the quenching temperature and specimen thickness. Moreover, it was found that the fracture strength of the quenched specimens was not affected by the increase of quenching cycles. This suggests a potential advantage of porous SiC ceramics for cyclic thermal-shock applications. 相似文献
170.