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991.
Epitaxial CdTe layers were grown using organometallic vapor phase epitaxy on Si substrates with a Ge buffer layer. Ge layer
was grown in the same reactor using germane gas and the reaction of germane gas with the native Si surface is studied in detail
at low temperature. It is shown that germane gas can be used to “clean” the Si surface oxide prior to CdTe growth by first
reducing the thin native oxide that may be present on Si. When Ge layer was grown on Si using germane gas, an induction period
was observed before the continuous layer of Ge growth starts. This induction period is a function of the thickness of the
native oxide present on Si and possible reasons for this behavior are outlined. Secondary ion mass spectrometry (SIMS) data
show negligible outdiffusion and cross contamination of Ge in CdTe. 相似文献
992.
993.
J. Shin Y. Hsu T. C. Hsu G. B. Stringfellow R. W. Gedridge 《Journal of Electronic Materials》1995,24(11):1563-1569
GalnSb alloys as well as the constituent binaries InSb and GaSb have been grown by organometallic vapor phase epitaxy using
the new antimony precursor trisdimethylaminoantimony (TDMASb) combined with conventional group III precursors trimethylindium
(TMIn) and trimethylgallium (TMGa). InSb layers were grown at temperatures between 275 and 425°C. The low values of V/III
ratio required to obtain good morphologies at the lowest temperatures indicate that the pyrolysis temperature is low for TDMASb.
In fact, at the lowest temperatures, the InSb growth efficiency is higher than for other antimony precursors, indicating the
TDMASb pyrolysis products assist with TMIn pyrolysis. A similar, but less pronounced trend is observed for GaSb growth at
temperatures of less than 500°C. No excess carbon contamination is observed for either the InSb or GaSb layers. Ga1-xInxSb layers with excellent morphologies with values of x between 0 and 0.5 were grown on GaSb substrates without the use of
graded layers. The growth temperature was 525°C and the values of V/III ratio, optimized for each value of x, ranged between
1.25 and 1.38. Strong photoluminescence (PL) was observed for values of x of less than 0.3, with values of halfwidth ranging
from 13 to 16 meV, somewhat smaller than previous reports for layers grown using conventional precursors without the use of
graded layers at the interface. The PL intensity was observed to decrease significantly for higher values of x. The PL peak
energies were found to track the band gap energy; thus, the luminescence is due to band edge processes. The layers were all
p-type with carrier concentrations of approximately 1017 cm3. Transmission electron diffraction studies indicate that the Ga0.5In0.5 Sb layers are ordered. Two variants of the Cu-Pt structure are observed with nearly the same diffracted intensities. This
is the first report of ordering in GalnSb alloys. 相似文献
994.
GaP:(N)的背景光谱和发光尖峰 总被引:1,自引:0,他引:1
获得高分辨GaP(N)光致发光光谱,观察到等电子陷陆束缚激子发光中LO和loc多声子发射,其强度分布答合泊松分布。将声子伴带区分为直接光跃迁和间接光跃迁,并进行了相应讨论,还观察到局域声子效应--光谱相似定律和相当显著的背景光谱。 相似文献
995.
无源微波遥感用于地震预报的实验研究 总被引:4,自引:1,他引:3
对无源微波遥感用于地震预报在理论研究的基础上对不同岩性不同结构的岩石试件进行了加载实验,测量了岩石试件的微波辐射随载荷的变化.实验得出:岩石试件的微波辐射能量随岩石应力状态变化而显著变化;而且,不同的波段变化的幅度不同;同一波段不同极化方式的波随应力变化的变化量也不同;微波辐射能量的变化能够被卫星微波遥感探测器探测到.实验还发现,岩石试件临破裂前出现明显的微波辐射异常. 相似文献
996.
在宝钢3号高炉计算机系统的开发过程中十分注意系统RAS性能设计。本文介绍了3号高炉计算机系统设计中,为提高系统的RAS性能所采取的各种对策。 相似文献
997.
998.
Taijiro Nonaka Rodney J. Clifton Taichiro Okazaki 《International Journal of Impact Engineering》1996,18(7-8):889-898
An analysis is presented of longitudinal waves in a thin elastic column. Velocity is specified at one end, and the boundary condition at the other end is expressed in terms of a range of effective impedances of an attached structure. Propagation, reflection and interference of the waves are followed by the method of characteristics. Integration of differential equations along characteristics yields the wave-induced stress, which is then applied to problems of earthquake excitation. Numerical examples are given for recorded updown ground motion of the Kobe Earthquake. 相似文献
999.
1000.