基于Pekar类型变分法的高斯函数型限定势阱量子点中电子的跃迁

分别选取抛物线型限定势阱和高斯函数型限定势阱描写盘状量子点中电子的横向限定势和纵向限定势,采用Pekar类型变分法推导出了电子的基态和激发态能量,并基于费米黄金规则讨论了在磁场作用下电子的跃迁几率。结果表明,高斯函数型限定势阱比抛物线型限定势阱更能精准反映量子点中真实的限定势;量子点的厚度对电子跃迁几率的影响显著;电声耦合强度α、磁场的回旋频率ω_c、抛物线型限定势阱范围R_0、高斯函数型限定势阱的阱深V_0和阱宽L等对电子跃迁几率Q的影响的量度和变化规律方面差异较大。     

An Electroabsorption Modulator Monolithically Integrated with a Semiconductor Optical Amplifier and a Dual-Waveguide Spot-Size Converter

A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spot-size converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology.A 1550～1600nm lossless operation with a high DC extinction ratio of 25dB and more than 10GHz 3dB bandwidth are successfully achieved.The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3°×18.0°,respectively,resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.     

量子阱材料折射率低偏振相关性研究

分析了阱宽、垒高和应变对量子阱材料TE模和TM模折射率的影响,并剖析了其中的物理机理.研究表明:对于量子限制效应带来的量子阱折射率偏振相关性,阱宽越小或垒高越高,折射率偏振相关性越大.压应变增大时,折射率偏振相关性增大,张应变可以克服量子限制效应带来的折射率偏振影响.对于不同阱宽和垒高的量子阱,均存在合适的张应变量使折射率偏振相关性最小,且阱宽越小或垒高越高所需的张应变量越大.根据以上分析,提出量子阱材料折射率低偏振相关设计方法,并据此设计出C波段(1 530～1 565 nm)内折射率低偏振相关(小于0.03)的量子阱材料In0.49Ga0.51As/In0.77Ga0.23As0.5P0.5.研究结果有助于优化设计光网络中关键器件.     

Study of the optical and structural properties of multi quantum well structures grown on high-index surfaces

The MOVPE overgrowth of high [0 1¯ 1]-oriented ridges confined at sides by facets related to {n 1 1} crystallographic planes is reported. We studied the influence of the side tilt on the thickness of the AlGaAs and GaAs epitaxial layers grown under the condition of the kinetic growth mode. The multi quantum well (MQW) structures were prepared on the sides of ridges tilted at 54.7°, 45° and 30° to (1 0 0). The sidewall surface morphologies before and after epitaxial growth were evaluated and compared. We observed no tendency towards planarization towards a neighbouring high-index crystallographic plane, such as (2 1 1) and (3 1 1). We also showed that the quantum wells of the MQW structure make a smooth transition over the edge between the top surface and the facet as both AlGaAs and GaAs grew at similar rates on the surfaces.     

Terahertz Semiconductor Quantum Well Devices

For eventually providing terahertz science with compact and convenient devices,terahertz (1～10THz) quantum-well photodetectors and quantum-cascade lasers are investigated. The design and projected detector performance are presented together with experimental results for several test devices,all working at photon energies below and around optical phonons. Background limited infrared performance (BLIP) operations are observed for all samples (three in total) ,designed for different wavelengths. BLIP temperatures of 17,13, and 12K are achieved for peak detection frequencies of 9.7THz(31μm) ,5.4THz(56μm) ,and 3.2THz(93μm) ,respectively. A set of THz quantum-cascade lasers with identical device parameters except for doping concentration is studied. The δ-doping density for each period varies from 3.2 × 1010 to 4. 8 × 1010cm-2. We observe that the lasing threshold current density increases monotonically with doping concentration. Moreover, the measurements for devices with different cavity lengths provide evidence that the free carrier absorption causes the waveguide loss also to increase monotonically. Interestingly the observed maximum lasing temperature is best at a doping density of 3.6 × 1010cm-2.     

High performance AlyGa1−yAs-GaAs-lrxGa1−xAs quantum well lasers defined by silicon-oxygen impurity-induced layer disordering

In these experiments impurity-induced layer disordering (IILD) utilizing chemical reduction of SiO₂ by Al (from Al_0.8Ga_0.2As) is employed to generate Si and O to effect layer disordering. The SiO₂-Al_0.8Ga_0.2As reaction is studied with respect to annealing ambient. By controlling the extent of disordering via As₄ overpressure, closely spaced (∼1μm) Si-O IILD buried heterostructure lasers can be optically coupled or uncoupled. Direct observation of O incorporation into the buried layers is shown using secondary ion mass spectroscopy (SIMS). The thermal stability of separate-confinement Al_yGa_1−yAs-GaAs-In_xGa_1−xAs quantum well heterostructure (QWH) laser crystals is investigated using SIMS, transmission electron microscopy (TEM), and photoluminescence (PL) measurements. The data show that the thermal stability of a strained-layer In_0.1Ga_0.9As quantum well (QW) is strongly dependent upon: (1) the layer thickness and heterointerfaces of the Al_yGa_1−yAs-GaAs waveguide layers located directly above and below the QW, (2) the type of surface encapsulant employed, and (3) the annealing ambient. Narrow single-stripe (<2μm) lasers fabricated via Si-O diffusion and layer disordering exhibit low threshold currents (I_th ∼ 4 mA) and differential quantum efficiencies,η, of 22% per facet under continuous (cw) room-temperature operation.     

Rashba效应下三角量子阱中弱耦合束缚极化子的性质

利用线性组合算符和幺正变换相结合的方法,推导出三角量子阱中弱耦合束缚极化子的基态能量。并讨论了耦合常数,库仑束缚势和电子面密度对极化子基态能量的影响。通过对GaAs材料的数值计算,最后结果显示：由于电-声子耦合作用和Rashba效应的存在,弱耦合束缚极化子的基态能量由四部分组成,而且弱耦合束缚极化子的基态能量随耦合常数,库仑束缚势和电子面密度都发生了分裂。     

Compact analytical model for single gate AlInSb/InSb high electron mobility transistors

We have developed a 2D analytical model for the single gate Al In Sb/In Sb HEMT device by solving the Poisson equation using the parabolic approximation method.The developed model analyses the device performance by calculating the parameters such as surface potential,electric field distribution and drain current.The high mobility of the Al In Sb/In Sb quantum makes this HEMT ideal for high frequency,high power applications.The working of the single gate Al In Sb/In Sb HEMT device is studied by considering the variation of gate source voltage,drain source voltage,and channel length under the gate region and temperature.The carrier transport efficiency is improved by uniform electric field along the channel and the peak values near the source and drain regions.The results from the analytical model are compared with that of numerical simulations(TCAD) and a good agreement between them is achieved.     

单轴压应变量子阱红外探测器吸收波长的研究

研究了单轴压应力对GaAs/AlGaAs/GaAs量子阱红外探测器(QWIP)吸收波长的影响。以量子阱电子干涉方法以及单轴压应力作用下量子阱应变理论为基础,分析了GaAs/AlGaAs/GaAs量子阱导带中子能级与应变的关系。理论上计算了单轴应力下四个QWIP吸收波长与应变的关系。结果表明,E1与E<1>能级之间的吸收波长和E(1)与EF能级之间的吸收波长随应变的增大而减小的幅度比E1与EF能级之间的吸收波长和E(0)与E1能级之间吸收波长随应变的增大减小的幅度大。     

基于相关函数的超声图像方位跳变检测和校正

为了解决超声电视测井成像图像中出现的方位跳变问题,提出了一种利用相关特征来检测方位跳变测井图像的方法.该方法利用超声测井图像相邻行之间相关性来自动搜索图像出现方位跳变的深度位置和方位差,根据跳变深度位置和方位差来循环平移图像,最终实现校正图像的目标.实验结果证明,该方法能准确地自动校正方位跳变的图像.对实际测井资料的处...