浅谈薄储层测井解释的影响因素及对策

测井解释是在实际开采之前,对于测井的信息进行再确定,将测井和地址信息之间的对应关系和应用关系进行更加详细的解说.这需要专业的测量人员运用一定的手段,将测井的信息加工成地质信息,测井的资料记录的相应数据大部分是关于物理的数据,如电阻率,自然电位等等,这些都可以成为野外勘测的地质依据,而传统的测井资料的纵向分辨率一般来说相应较低,这就为薄储层测井所产生的响应设置了一定的响应障碍,因此在进行解释的过程中,应该注重解释结果的准确性等.     

多变量离子注入型量子阱混杂效应

为实现InP基单片集成光电子器件和系统,对InGaAsP/InGaAsP分别限制异质结多量子阱激光器结构展开量子阱混杂(QWI)技术研究。在不同能量P离子注入、不同快速热退火(RTA)条件以及循环退火下,研究了有源区量子阱混杂技术,实验结果采用光致发光(PL)谱进行表征。实验结果表明:在不同变量下皆可获得量子阱混杂效果,其中退火温度影响最为显著,且循环退火可进一步提高量子阱混杂效果;PL谱蓝移随着退火温度、退火时间和注入能量的增大而增大,退火温度对蓝移的影响最大,在注入剂量为1×10^14 ion/cm2,注入能量为600keV,750℃二次退火150s时获得最大蓝移量116nm。研究结果为未来基于QWI技术设计和制备单片集成光电子器件和系统奠定了基础。     

有线电视暗线传输在四平的实现

适应城市整体建设发展的要求,加强和改进有线电视网络传输系统,运用暗线传输这一先进、科学的信号传输方式,实现有线电视干线、支线和用户分配系统的互连互通,解决"有线电视线路器件老化、容易遭受破坏、影响城市美化"的实际问题,保证有线电视终端用户信号指标,促进城市建设的整体发展.     

基于电子波干涉红外探测器的研究

电子波干涉法是一种新的量子阱探测器能带结构计算方法,该方法是基于电子波在量子阱界面的反射和干涉效应提出的。利用电子波干涉法,设计了一种新型的宽带量子阱红外探测器。对这种探测器的能带结构进行了计算,分析了这种新型探测器的响应带宽和暗电流特性。理论计算表明:电子在干涉形成的分离能级间跃迁可形成多个响应带,这些响应带之间相互交叠可实现宽带响应;器件的暗电流在微安量级且随温度的变化不大。共振隧穿电流随温度的变化较小,是暗电流的主要组成部分;而热离子激发电流随温度的变化较大,但对暗电流的影响不大。     

Multisubband electron mobility in a parabolic quantum well structure under the influence of an applied electric field

We study the multisubband electron mobility in a barrier delta doped AlχGal-χAs parabolic quantum well structure under the influence of an applied electric field perpendicular to the interface plane. We consider the alloy fraction χ = 0.3 for barriers and vary x from 0.0 to 0.1 for the parabolic well. Electrons diffuse into the well and confine within the triangular like potentials near the interfaces due to Coulomb interaction with ionized donors. The parabolic structure potential, being opposite in nature, partly compensates the Coulomb potential. The external electric field further amends the potential structure leading to an asymmetric potential profile. Accordingly the energy levels, wave functions and occupation of subbands change. We calculate low temperature electron mobility as a function of the electric field and show that when two subbands are occupied, the mobility is mostly dominated by ionised impurity scattering mediated by intersubband effects. As the field increases transition from double subband to single subband occupancy occurs. A sudden enhancement in mobility is obtained due to curtailment of intersubband effects. Thereafter the mobility is governed by both impurity and alloy disorder scatterings. Our analysis of mobility as a function of the electric field for different structural parameters shows interesting results.     

高斯光束照明单透镜系统的动态散斑

对随机位相屏产生的动态散斑可以根据照明方式及光路设计方法进行分类研究。根据T.Yoshimura的文章所提出的理论公式,我们对高斯光束照明的单透镜成像系统的动态散斑进行了实验测量。实验证明理论公式正确,实验结果与理论予期值符合也说明我们所使用的实验方法可行。在实验过程中,我们提出一种新的拟合方法,从而解决了实验常数的确定问题。     

Property comparison of polarons in zinc-blende and wurtzite GaN/AlN quantum wells

The properties of polarons in zinc-blende and wurtzite GaN/AlN quantum wells with Fr(o|¨)hlich interaction Hamiltonians are compared in detail.The energy shifts of polarons at ground state due to the interface(IF), confined(CO) and half-space phonon modes are calculated by a finite-difference computation combined with a modified LLP variational method.It is found that the two Fr(o|¨)hlich interaction Hamiltonians are consistent with each other when the anisotropic effect from the z-direction and the x-y plane is neglected.The influence of the anisotropy on the polaron energy shifts due to the IF phonon modes for a smaller well width or due to the CO phonon modes for a moderate well width is obvious.In addition,the built-in electric field has a remarkable effect on the polaron energy shifts contributed by the various phonon modes.     

半导体多量子阱Mach-Zehnder调制器的性能分析

高速光调制器是高速光纤传输系统的关键器件之一 ,在各种类型的光波导调制器中 ,Mach- Zehnder干涉型调制器是最常用的调制器类型之一。概述了半导体多量子阱 Mach- Zehnder调制器的原理和性能 ,给出该类调制器的模型 ,最后介绍所获得的重要模拟结果。     

High Efficiency Al-Free 980nm InGaAs/InGaAsP/InGaP Strained Quantum Well Lasers

High efficiency Al-free InGaAs/InGaAsP/InGaP lasers emitting at 980nm are fabricated by MOCVD. The lasers exhibit a high internal quantum efficiency of 95 % and a low internal loss of 1.8 cm-1. Low threshold current density of 190A/cm2 and high slope efficiency of 1.06W/A are obtained by lasers with 800μm cavitylength. A high characteristic temperature 210C is also obtained by replacing the GaAs barrier with high-bandgap InGaAsP barrier. The measured vertical and parallel divergence angle are 40° and 8°, respectively.     

半导体量子阱和量子线中杂质束缚能的度规法则与维里定理

利用变分法计算了矩形量子线和量子阱中类氢杂质束缚能的度规法则和维里定理值.计算结果表明:的确存在一个参数(杂质有效玻尔半径)可用来完全确定束缚能的值,而不必考虑截面的形状和尺寸;体系的维里定理值并不等于常数,而是随杂质有效玻尔半径变化,在阱宽较小和较大时,维里定理值都趋于2.