常用电路的故障注入方法

介绍了一种在常用电路中进行故障注入的方法。通过这种方法,可以对被测产品进行已知故障的注入,来验证被测产品及其设备的测试性能,从而使被测产品和设备的测试性结论更具说服力。     

高纯稀土氧化物中的非稀土杂质的测定流动注射微柱预富集ICP-AES法

利用自合成的碳硅凝胶为吸附材料,以铜试剂［二乙基二硫代氨基甲酸钠（ＮａＤＤＴＣ）］为柱前衍生化试剂。在优化的实验条件下,于ｐＨ４．６的缓冲介质中在线预富集Ａｌ（Ⅲ）,Ｃｒ（Ⅵ）,Ｃｕ（Ⅱ）,Ｆｅ（Ⅲ）,Ｐｂ（Ⅱ）,Ｖ（Ⅴ）和Ｚｎ（Ⅱ）．采用停流技术洗脱,富集倍数可达８．１～１２．６倍,检出限为ｎｇ／ｍＬ级。对高纯氧化铕（Ｅｕ２Ｏ３）中的非稀土杂质进行测定,可避免大量稀土基体对测定的干扰。     

硝酸脲与黑索今混合炸药的制备及性能研究

为解决黑索今(RDX)生产工厂的废硝酸再利用问题,在RDX生产过程中不分离出RDX,而是直接加入一定量尿素水溶液,废硝酸与尿素反应生成硝酸脲后,使RDX和硝酸脲共同结晶,生成RDX与硝酸脲共结晶的混合炸药。得到两大类型的混合炸药:Ⅰ型混合炸药(含RDX 10%~20%)的综合爆炸性能优于现有的铵梯、乳化及粉状工业炸药;Ⅱ型混合炸药(含RDX 40%)的爆炸性能与TNT相当。该混合炸药的制造工艺简单,RDX生产过程的废酸污染问题得到了改善。     

用瞬态脉冲试验研究射频试验后电火工品的性能变化

介绍了瞬态脉冲试验原理,利用瞬态脉冲试验研究了电火工品经过射频作用后发火性能的变化,发火试验的结果说明:射频试验功率越大,温升越高,火工品的平均发火作用时间就越长.研究结果表明瞬态脉冲试验能够反映电火工品受射频能量作用后的性能变化.     

Liquid-Phase Transport During Removal of Organic Binders in Injection-Molded Ceramics

A method has been developed for calculating hydraulic pressures induced by thermal expansion of liquid binders early in the removal cycle, when evaporative losses are negligible and fully saturated conditions prevail. Specific results were obtained for flat compacts containing a common wax binder, mixed with varying amounts of low-density polyethylne. In general, these results show how the risk of hydraulic fracture increases with heating rate and compact thickness. Although pressures are minimal when the binder consists entirely of wax, the continual addition of polyethylene eventually gives rise to unacceptable risk levels, even for relatively thin compacts. Binder removal at elevated temperatures is considered subsequently. In this case, vapor pressures eventually approach a critical level, thereby allowing mass removal by evaporation to overcome the effect of thermal expansion in maintaining full saturation. With the onset of void formation, the developing capillary pressure supersedes hydraulic pressure as the driving force in liquid transport. Besides representing capillary flow, the present formulation also accounts for thermal degradation of the binder during removal. The resulting system of equations was solved numerically for a variety of representative debinding conditions. Predictions for flat compact containing a balanced wax/polyethylene binder indicate that thermal degradation of the polyethylene can give rise to a marked improvement in debinding rates. It turns out, however, that this enhancement is far more effective in thinner compacts.     

变频调速技术在注塑机上的应用

本文对应用于注塑机上的变频调速技术节能原理作了分析，介绍了使用中的一些关键技术，指出注塑机上使用的变频调速需进一步解决的几个问题，并举例说明了变频调速技术应用于注塑机上具有显著的节能效果及提高系统性能的优越性。     

单纵模调Q脉冲光纤激光器研究进展?

单纵模调Q激光光源广泛应用于精密测量等领域,光纤激光器是一种性能优良的新一代固体激光器,近年来,光纤激光器的单纵模调Q技术发展迅速。本文对单纵模光纤激光器中引入Q开关和单纵模种子注入调Q光纤激光器这两种光纤激光器的单纵模调Q技术的工作原理、发展现状以及未来可能的发展趋势进行了综合述评。     

艾易舒注射液合并化疗治疗乳腺癌的疗效观察

目的:应用艾易舒注射液治疗乳腺癌术后患者并观察其临床疗效。方法:选择我院确诊为乳腺癌术后患者62例,随机分为治疗组(33例)和对照组(29例),治疗组应用艾易舒注射液50ml加入生理盐水250ml静脉点滴及常规化疗,对照组仅给予常规化疗,3个周期后比较两组CA153值、TSGF的变化及近期疗效、不良反应等指标的差异性。结果:治疗组CAl53及TSGF数值治疗后下降显著,阳性例数远远低于对照组;两组的近期疗效无显著差异,但治疗组的不良反应明显低于对照组。结论:艾易舒注射液在一定程度上可以预防转移和复发,具有抗癌作用。     

Contact-Barrier Free,High Mobility,Dual-Gated Junctionless Transistor Using Tellurium Nanowire

The gate-all-around nanowire transistor, due to its extremely tight electrostatic control and vertical integration capability, is a highly promising candidate for sub-5 nm technology nodes. In particular, the junctionless nanowire transistors are highly scalable with reduced variability due to avoidance of steep source/drain junction formation by ion implantation. Here a dual-gated junctionless nanowire p-type field effect transistor is demonstrated using tellurium nanowire as the channel. The dangling-bond-free surface due to the unique helical crystal structure of the nanowire, coupled with an integration of dangling-bond-free, high quality hBN gate dielectric, allows for a phonon-limited field effect hole mobility of 570 cm² V⁻¹ s⁻¹ at 270 K, which is well above state-of-the-art strained Si hole mobility. By lowering the temperature, the mobility increases to 1390 cm² V⁻¹ s⁻¹ and becomes primarily limited by Coulomb scattering. The combination of an electron affinity of ≈ 4 eV and a small bandgap of tellurium provides zero Schottky barrier height for hole injection at the metal-contact interface, which is remarkable for reduction of contact resistance in a highly scaled transistor. Exploiting these properties, coupled with the dual-gated operation, we achieve a high drive current of 216 μA μm⁻¹ while maintaining an on-off ratio in excess of 2 × 10⁴. The findings have intriguing prospects for alternate channel material based next-generation electronics.     

Metalorganic chemical vapor deposition of silver thin films for future interconnects by direct liquid injection system

Deposition of Ag films by direct liquid injection-metal organic chemical vapor deposition (DLI-MOCVD) was chosen because this preparation method allows precise control of precursor flow and prevents early decomposition of the precursor as compared to the bubbler-delivery. Silver(I)-2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionato-triethylphosphine [Ag(fod)(PEt₃)] as the precursor for Ag CVD was studied, which is liquid at 30 °C. Ag films were grown on different substrates of SiO₂/Si and TiN/Si. Argon and nitrogen/hydrogen carrier gas was used in a cold wall reactor at a pressure of 50–500 Pa with deposition temperature ranging between 220 °C and 350 °C. Ag films deposited on a TiN/Si diffusion barrier layer have favorable properties over films deposited on SiO₂/Si substrate. At lower temperature (220 °C), film growth is essentially reaction-limited on SiO₂ substrate. Significant dependence of the surface morphology on the deposition conditions exists in our experiments. According to XPS analysis pure Ag films are deposited by DLI-MOCVD at 250 °C by using argon as carrier gas.