Cyclic deformation behaviour and fatigue crack propagation in AZ91HP and AM50HP

Abstract

The purpose of the present work was to investigate room temperature cyclic deformation and crack propagation behaviour in the most widely used die casting magnesium alloy AZ91HP with different heat treatments. In addition, examination of the low cycle fatigue properties of solid solution treated alloy AZ91HP-T4 was emphasised in comparison with AM50HP. Obvious cyclic strain hardening was found in low cycle fatigue tests, especially for AZ91HP-T4 at high cyclic strain amplitudes. Nevertheless, it was very difficult to evaluate differences in low cycle fatigue behaviour between die casting alloy AZ91HP-F, artificially aged alloy AZ91HP-T6, solution treated alloy AZ91HP-T4, and AM50HP(-F) because of the scatter of test data. However, it may be concluded that the last two alloys had greater plastic strain components during cyclic deformation, and AZ91HP-T4 exhibited a longer fatigue life than that of AM50HP at the highest strain amplitude. According to results of tests carried out on AZ91HP compact tension (CT) specimens, it was concluded that solution treatment could reduce the fatigue crack propagation rate, and plasticity induced crack closure was considered to have a predominant effect on fatigue crack propagation.     

Effect of Si target sputtering power on diffusion barrier properties of Ta–Si–N thin films

Abstract

Ta–Si–N thin films and Cu/Ta–Si–N thin films were deposited on p type Si(111) substrates by magnetron reactive sputtering. Then the films were characterised by four point probe sheet resistance measurement, AFM, SEM and XRD respectively. According to the XRD results, the authors found that the crystallisation of Ta nitrides in Ta–Si–N/Si thin films is suppressed effectively when fabricated by a high Si target sputtering power. As the Si target power varies, the failure temperature of Cu/Ta–Si–N/Si is changed. The sample fabricated by the Si target power of 200 W fails after 800°C rapid thermal annealing and it has the highest failure temperature. The investigation of failure mechanism shows that Cu atoms diffuse through grain boundaries or amorphous structure of the Ta–Si–N barrier, and react with Si to form Cu–Si phase. And it causes the failure of the barrier.