程控伏安单元的研制

介绍一种适用于３２×３２元焦平面红外探测器伏－安特性自动测试用的专用仪器。本伏－安单元带ＩＥＥＥ－４８８接口，配上程控电流源和带接口的数字多用表，就可进行最多达３２×３２元的焦平面红外探测器伏－安特性的全自动测试。     

Molecular beam epitaxial HgCdTe material characteristics and device performance: Reproducibility status

Extensive material, device, and focal plane array (FPA) reproducibility data are presented to demonstrate significant advances made in the molecular beam epitaxial (MBE) HgCdTe technology. Excellent control of the composition, growth rate, layer thickness, doping concentration, dislocation density, and transport characteristics has been demonstrated. A change in the bandgap is readily achieved by adjusting the beam fluxes, demonstrating the flexibility of MBE in responding to the needs of infrared detection applications in various spectral bands. High performance of photodiodes fabricated on MBE HgCdTe layers reflects on the overall quality of the grown material. The photodiodes were planar p-on-n junctions fabricated by As ion-implantation into indium doped, n-type, in situ grown double layer heterostructures. At 77K, diodes fabricated on MBE Hg_1−xCd_xTe with x ≈ 0.30 (λ_co ≈ 5.6 μm), x ≈ 0.26 (λ_co ≈ 7 μm), x ≈ 0.23 (λ_co ≈ 10 μm) show R₀A products in excess of 1 x 10⁶ ohm-cm², 7 x 10⁵ ohm-cm², and 3 x 10² ohm-cm², respectively. These devices also show high quantum efficiency. As a means to assess the uniformity of the MBE HgCdTe material, two-dimensional 64 x 64 and 128 x 128 mosaic detector arrays were hybridized to Si multiplexers. These focal plane arrays show an operability as high as 97% at 77K for the x ≈ 0.23 spectral band and 93% at 77K for the x ≈ 0.26 spectral band. The operability is limited partly by the density of void-type defects that are present in the MBE grown layers and are easily identified under an optical microscope.     

红外小光点扫描测试系统

介绍了中波和长波“红外小光点扫描测试系统”。该系统由红外聚焦光学子系统，六维精密扫描工件台及数据采集子系统构成。可用于红外焦平面器件重要性能参数如串音、响应均匀性、转移效率的测量，也可用于单元红外探测器有效响应面积和响应均匀性等参数的测量。     

提高两点温度定标法精度的焦平面非均匀性校准技术研究

凝视红外成像系统中的探测器非均匀性校准(降低固有空间噪声)技术是一项处在探索过程中的关键技术.目前实用性较好的两点温度定标法的校准系数精度受读出噪声、信号动态范围、模数转换字长和运算噪声的限制,很难使焦平面探测器的空间残留噪声达到应有的精度.文中探索了一种二次参数补偿的两点温度定标方案,由基本公式得到的校准参数值,再依据现实信号动态范围进行实时精度补偿,使之更加接近于理论计算值,从而使非均匀性校准的系数精度得到较大幅度提高.这一方案可在不改变图像处理机硬件开销和软件运行负担的前提下完成对两点温度定标法精度的补偿.计算机仿真实验结果证明了该方法的有效性,可降低残留空间噪声50%以上.     

军用焦平面热像仪的优化发展模式

在对焦平面探测器的品种规格进行大量统计的基础上,分析了焦平面探测器和热像仪品种产生的因素及带来的问题.介绍了国外热像仪优化发展的方案,供参考借鉴.从焦平面热像仪的技术关系、产品集成关和军事应用关系等方面,研究提出了焦平面热像仪优化发展的技术思路、途径,以指导军用焦平面热像仪的优化发展.     

焦平面输入电路研究

在混合式焦平面阵列中,探测器和读出电路的耦合通过输入级电路实现。为分析输入电路对探测器-放大器系统性能的影响,用分立元件设计制作了一个三级的前置放大器并进行了模拟实验,实验表明放大器输入级噪声是造成探测器信噪比下降的主要因素,应用中应该选用具有特定噪声性能的放大器与探测器匹配。研究了焦平面中常用的直接注入(DI)和电容反馈放大电路(CTIA)与探测器耦合时在噪声、输入阻抗、工作点匹配等方面应具备的条件。提出了临界输入阻抗的概念,实验表明,当电路的输入阻抗低于此临界值时(对于GaN p?蛳i?蛳n 光伏探测器来说约为106 Ω),焦平面才能获得较高的注入效率。     

GaAs／AlGaAs多量子阱器件均匀性研究

从几个方面研究了ＧａＡｓ／ＡｌＧａＡｓ多量子阱红外探测器的均匀性,找到了影响其均匀性的几个因素,今后的工作奠定了基础。     

Developments in the fabrication and performance of high-quality HgCdTe detectors grown on 4-in. Si substrates

We are continuing to develop our growth and processing capabilities for HgCdTe grown on 4-in. Si substrates by molecular beam epitaxy (MBE). Both short-wave and mid-wave infrared (SWIR and MWIR) double-layer hetero-junctions (DLHJs) have been fabricated. In order to improve the producibility of the material, we have implemented an in-situ growth composition-control system. We have explored dry etching the HgCdTe/Si wafers and seen promising results. No induced damage was observed in these samples. Detector results show that the HgCdTe/Si devices are state-of-the-art, following the diffusion-limited trend line established by other HgCdTe technologies. Focal-plane array (FPA) testing has been performed in order to assess the material over large areas. The FPA configurations range from 128×128 to 1,024×1,024, with unit cells as small as 20 μm. The MWIR responsivity and NEDT values are comparable to those of existing InSb FPAs. Pixel operabilities well in excess of 99% have been measured. We have also explored the role of growth macrodefects on diode performance and related their impact to FPA operability. The SWIR HgCdTe/Si shows similar results to the MWIR material. Short-wave IR FPA, median dark-current values of less than 0.1 e⁻/sec have been achieved.     

分子束外延生长3英寸HgCdTe晶片

报道了用分子束外延的方法制备 3英寸HgCdTe薄膜的研究结果 ,获得的HgCdTe外延材料均匀性良好 ,在直径 70mm圆内 ,组份标准偏差率为 1.2 % ,对应 80K截止波长偏差仅为 0 .1μm .经过生长条件的改进 ,表面形貌获得了大幅度改善 ,缺陷密度小于 30 0cm-2 ,缺陷尺寸小于 10 μm ,可以满足大规模HgCdTe焦平面列阵的应用需求     

红外系统中的扫描型和凝视型FPA

红外探测器是红外系统的核心器件,第二代红外探测器就是FPA。由于红外系统的任务和FPA的特点、技术、价格等原因,FPA的发展既有与IC发展类似的规律,又有其自身发展的 特殊性。通过对制冷的扫描 型和凝视型FPA的分析和比较,认为在今后FPA的发展中,这两种FPA将并行发展,以为凝视型FPA要代替扫描型FPA的看法可能是过于简单了。