低噪声晶振16次倍频源

本文介绍了低噪声高次倍频器的设计原理及低相位噪声晶振１６次倍频信号源。     

基于IFS分形理论的信源编码技术的研究

本文首次系统地研究了基于ＩＦＳ分形理论的信源压缩编码与传统方法的关系。     

煤矿井下光纤工业电视网

本文报道了我们设计建设的一个煤矿井下光纤工业电视网的结构、光缆的敷设并对适合于井下环境的光端机性能作了介绍。     

塔里木盆地下寒武统烃源岩分布

塔里木盆地下寒武统烃源岩是近年来诸多学者研究的热点,对于其分布的认识还存在一定的分歧,并成为制约寒武系勘探及区带优选的重要因素。基于野外露头及盆地内钻井资料的认识,分析下寒武统烃源岩的沉积环境;通过正演模拟下寒武统玉尔吐斯组烃源岩的地震反射特征,结合模拟结果,刻画下寒武统玉尔吐斯组烃源岩沉积边界;基于震旦系与寒武系地震解释与成图研究,分析寒武系沉积前古地貌特征及寒武系的沉积环境,探讨下寒武统烃源岩的主要控制因素,旨在解决下寒武统生烃源岩的生烃中心,指导寒武系有利勘探区带的优选。研究认为,玉尔吐斯组为寒武纪早期持续海侵背景下、分布稳定的烃源岩;正演模拟结果及地震资料表明,玉尔吐斯组表现为寒武系底部强波峰—强波谷的地震反射特征,在盆地内可追踪对比;根据塔里木盆地震旦纪与早寒武世古地理格局认识,认为寒武系台缘斜坡—盆地一带为下寒武统烃源岩厚度加厚区,是台盆区烃源岩最富集的地区。     

Effect of light-induced metastable defects on photocarrier lifetime

Creation and annealing of light-induced defects and their effect on photocarrier lifetime have been studied at 120 and 300 K using constant photocurrent method (CPM) and steady-state photoconductivity measurements. A hysteresis-like relation is observed between photoconductivity and light-induced defect density. This relation depends on both degradation temperature and light intensity used for the degradation. A broad, resembling a two-component distribution of defect annealing activation energies together with distribution of recombination coefficients account for the observed changes at 120 K. On the other hand, these distributions are narrower and sharply peaked at about 1 eV for the 300 K measurements. Results indicate that defects which are created at the earlier stages of the illumination have smaller annealing activation energies and higher recombination coefficient (capture cross-section) and these are better recombination centers than the defects with higher annealing activation energies.     

Pure‐Red Dye for Organic Electroluminescent Devices: Bis‐Condensed DCM Derivatives

In this paper, the bis‐condensed 4‐(dicyanomethylene)‐2‐methyl‐6‐[p‐(dimethylamino)styryl]‐4H‐pyran ( DCM) derivatives are introduced as a new class of red dye for organic light‐emitting devices (OLEDs). They showed more red‐shifted emission than the mono‐substituted DCM derivatives and the emission maxima increased as the electron‐donating ability of the aromatic donor group increased. On the basis of these results, red light‐emitting devices were fabricated with bis‐condensed DCM derivatives as red dopants. For a device of configuration ITO/TPD/Alq₃ + DADB (5.2 wt.‐%)/Alq₃/Al (where ITO is indium tin oxide, TPD is N,N′‐diphenyl‐N,N′‐bis(3‐methylphenyl)‐1,1′‐biphenyl‐4,4′‐diamine, Alq₃ is tris(8‐hydroxyquinoline) aluminum, and DADB is [2,6‐bis[2‐[5‐(dibutylamino)phenyl]vinyl]‐4H‐pyran‐4‐ylidene]propanedinitrile), pure red emission was observed with Commission Internationale de l’Eclairage (CIE 1931) coordinates of (0.658, 0.337) at 25 mA/cm².     

塔里木盆地库车坳陷吐格尔明及周缘地区三叠系—侏罗系烃源岩地球化学特征、分布规律与油气地质意义

吐格尔明及周缘地区发育多套烃源岩,但主力烃源岩层位与生烃潜力不明确,制约了油气勘探。通过对吐格尔明及周缘地区钻井、地震资料和油气与烃源岩地球化学数据综合分析认为,研究区三叠系—侏罗系自下而上发育4套烃源岩：其中三叠系塔里奇克组（T₃t）煤系泥岩厚度薄且分布局限,有机质丰度中等,有机质类型以Ⅲ型为主,处于成熟—高成熟阶段;侏罗系阳霞组一段（J₁y¹）湖相泥岩厚度薄、分布稳定,有机质丰度高,有机质类型以Ⅱ₁型为主;阳霞组二—四段（J₁y^2-4）与克孜勒努尔组（J₂kz）2套煤系泥岩厚度大、分布稳定,有机质丰度较高,有机质类型以Ⅱ₂—Ⅲ型为主;侏罗系烃源岩整体处于低熟—成熟阶段。通过烃源岩与油气生物标志物特征分析可知：吐格尔明地区油气主要来自侏罗系烃源岩,该地区南北两翼深部烃源岩生成的油气通过逆冲断裂与三叠系、侏罗系顶面不整合面侧向运移,再经断裂垂向充注阳霞组和克孜勒努尔组,形成2套富油气层,指出克孜勒努尔组和阳霞组为该区下一步油气勘探主力目的层。     

共振式复合筛筛孔尺寸对工艺效果影响的试验分析

为研究单振源共振筛筛孔尺寸对工艺效果的影响,在单振源共振筛试验系统中筛孔尺寸分别取0.075、0.1、0.12、0.15、0.2、0.3mm,处理量分别取2、4、6、8、12、14、16、18、20 t/m_².h,测定入料细度(-200目)、筛下细度(-200目)及筛上细度(-200目),并计算出筛下产率、筛分效率等相关指标,研究结果表明,随着处理量的逐渐增大,筛下细度(-200目)基本保持恒定,筛上细度(-200目)逐渐增大,筛下产率与筛分效率均逐渐减小。同时在筛孔尺寸为0.075~0.15 mm,随着筛孔尺寸的逐渐变大,处理量快速增大,当筛孔达到0.2mm以后,处理量逐渐趋于平缓,且筛分效率为75%时,处理量可达到8.8~19.3 t/m_².h。     

Toward Highly Efficient Solid‐State White Light‐Emitting Electrochemical Cells: Blue‐Green to Red Emitting Cationic Iridium Complexes with Imidazole‐Type Ancillary Ligands

Using imidazole‐type ancillary ligands, a new class of cationic iridium complexes ( 1 – 6 ) is prepared, and photophysical and electrochemical studies and theoretical calculations are performed. Compared with the widely used bpy (2,2′‐bipyridine)‐type ancillary ligands, imidazole‐type ancillary ligands can be prepared and modified with ease, and are capable of blueshifting the emission spectra of cationic iridium complexes. By tuning the conjugation length of the ancillary ligands, blue‐green to red emitting cationic iridium complexes are obtained. Single‐layer light‐emitting electrochemical cells (LECs) based on cationic iridium complexes show blue‐green to red electroluminescence. High efficiencies of 8.4, 18.6, and 13.2 cd A^?1 are achieved for the blue‐green‐emitting, yellow‐emitting, and orange‐emitting devices, respectively. By doping the red‐emitting complex into the blue‐green LEC, white LECs are realized, which give warm‐white light with Commission Internationale de L'Eclairage (CIE) coordinates of (0.42, 0.44) and color‐rendering indexes (CRI) of up to 81. The peak external quantum efficiency, current efficiency, and power efficiency of the white LECs reach 5.2%, 11.2 cd A^?1, and 10 lm W^?1, respectively, which are the highest for white LECs reported so far, and indicate the great potential for the use of these cationic iridium complexes in white LECs.     

Analysis of interface recombination and self-absorption effect on the performance of QWIP-HBT-LED integrated device

In this paper, the effect of interface recombination and self-absorption within the light emitting diode (LED) active region on the efficiency of QWIP-HBT-LED integrated device is considered. This device is composed of a quantum well infrared photodetector (QWIP), a heterojunction bipolar transistor (HBT) and an LED. The evaluation is based on solving the continuity equation describing the carrier diffusion within the LED active region. Analytical expression describing the effect of self-absorption and surface recombination on the LED quantum efficiency is derived. In addition, the active region width and all interested device parameters are involved. It is observed that the quantum conversion efficiency of the device under consideration is degraded by the self-absorption and interface recombination within the recombined region of the LED. Also, the quantum conversion efficiency of the device is increased with the increase of the LED active region as long as the recombination velocity is above a specified value, while it is decreased with the increase of the LED active region as long as the recombination velocity is below this specified value.