声诱饵仿真试验系统

介绍了声诱饵仿真试验系统的组成、工作原理、对接装置结构等,建立了对接装置声耦合状态下的数学模型,对近场声压分布进行了仿真计算,得出了匹配材料厚度、发射和接收换能器的选取原则。     

Investigation into polishing process of CVD diamond films

A new technique used for polishing chemical vapor deposition (CVD) diamond films has been investigated, by which rough polishing of the CVD diamond films can be achieved efficiently. A CVD diamond film is coated with a thin layer of electrically conductive material in advance, and then electro-discharge machining (EDM) is used to machine the coated surface. As a result, peaks on the surface of the diamond film are removed rapidly. During machining, graphitization of diamond enables the EDM process to continue. The single pulse discharge shows that the material of the coated layer evidently affects removal behavior of the CVD diamond films. Compared with the machining of ordinary metal materials, the process of EDM CVD diamond films possesses a quite different characteristic. The removal mechanism of the CVD diamond films is discussed.     

正确选用热力管网保温材料的几个问题

介绍了做好热力管网保温应具备的有关知识和数据，以及宝钢蒸汽主干管网在采用四种保温材料下的经济保温层厚度和相对的节能效益，认为目前适于宝钢公司热源温度在６００℃以下较好的保温材料有新型矿渣棉制品和泡沫石棉板。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

径向磁悬浮轴承结构特性研究及其模型的建立

本文分析研究了径向可控磁悬浮轴承的多磁极结构对系统模型的影响，推导并建立了一种新的考虑耦合作用的数学模型。     

既有钢筋混凝土框架结构抗震加固若干问题探讨

针对钢筋混凝土框架结构抗震加固问题的复杂性 ,本文深入分析了抗震加固结构的受力特征 ,探讨了卸荷对加固构件承载力的影响 ,并针对抗震加固后的“隐含危险转移”问题提出了相应的对策。最后 ,提出了抗震加固的基本原则 ,可供结构抗震加固时参考     

湿硫化氢环境下的球罐腐蚀状况分析

在湿硫化氢环境下 ,尤其储存介质中的硫化氢含量超标时 ,很容易对储存容器壳体 (含焊缝和母材 )造成硫化氢应力腐蚀或氢鼓包。作者较仔细分析了 1 0 0 0m3 丙烯球罐产生硫化氢应力腐蚀开裂和40 0m3 LPG球罐产生氢鼓包的原因。提出了此类设备在设计选材、设备制造、施工安装和使用维护等环节应注意的问题。     

天然多糖类/蛋白质复合材料的研究进展

在参考了 31篇文献的基础上 ,详述了天然多糖类与蛋白质复合材料的研究进展     

复相材料的循环变形行为

对三种组织状态的F-M复相钢进行了对称和非对称循环加载条件下的形变研究.结果表明,双相钢的循环变形行为,不仅与组织中位错组态的演变过程有关,同时也受循环载荷大小、类型以及加载方式所影响.分析表明,双相钢的循环硬化、软化行为主要受控于两个基本过程,即循环变形时位错组态演变的物理过程和相间分载应力的转嫁、相间残余应力变化的力学过程.