Effect of praseodymium substitution on the growth and properties of Y1−x Pr x Ba2Cu3O7−δ (o <x < 0·4) single crystals

In the present paper, a modified self-flux technique has been successfully employed for the growth of pure and praseodymium substituted (partially) large single crystals of high temperature superconducting Y_1−x Pr _x Ba₂Cu₃O_7−δ (x = 0·0,0·2,0·4). Typical sizes of the platy and bulky crystals of pure YBCO(123) material are ≈ 2 × 2 × 0·1 mm³ and 4 × 1 × 1 mm³, respectively. In case of Pr-substitution, the typical sizes of platy and bulky crystals of Y_0·8Pr_0·2Ba₂Cu₃O_7−δ and Y_0·6Pr_0·4Ba₂Cu₃O_7−δ materials are ≈ 2 × 3 × 0·1 mm³ and 5 × 1 × 1 mm³ and ≈ 1 × 1·5 × 0·1 mm³ and 7 × 0·2 × 0·1 mm³, respectively. The morphology and growth habit of the as-grown single crystals and the critical transition temperature (T _c) of the oxygenated crystals were found to depend on the Pr-content. Paper presented at the poster session of MRSI AGM VI, Kharagpur, 1995     

C－BN衬底上金刚石的异质外延生长研究

用热灯丝ＣＶＤ方法在Ｃ－ＢＮ单晶衬底上制备出金刚石膜，并且在Ｃ－ＢＮ（１００）面上观察到金刚石的异质外延。     

NEW APPROACH FOR ESTIMATION OF ΔJ AND FOR MEASUREMENT OF CRACK GROWTH AT ELEVATED TEMPERATURE

Abstract— The ACPD-method was used to measure crack growth in low cycle fatigue tests at elevated temperature. The material which was investigated at T = 550°C was the ferritic steel 2.25Cr–1Mo. Characteristic values of representative hysteresis loops were determined. The crack growth data were correlated with the effective part of the fracture mechanics parameter Δ J. A new method for the calculation of Δ J is proposed.     

肿瘤血管内皮生长因子受体PET示踪剂研究进展

摘要：本文对血管内皮细胞生长因子（VEGF）的结构、功能及生理作用，VEGFR的靶向抗肿瘤新生血管生成治疗，VEGF的PET示踪剂分类，采用18F标记的VEGFR酪氨酸激酶抑制剂类合成等几个方面做了简要叙述。     

Using airborne laser scanning to monitor tree migration in the boreal-alpine transition zone

The boreal tree line is expected to advance upwards into the mountains and northwards into the tundra due to global warming. The major objective of this study was to find out if it is possible to use high-resolution airborne laser scanner data to detect very small trees — the pioneers that are pushing the tree line up into the mountains and out onto the tundra. The study was conducted in a sub-alpine/alpine environment in southeast Norway. A total of 342 small trees of Norway spruce, Scots pine, and downy birch with tree heights ranging from 0.11 to 5.20 m were precisely georeferenced and measured in field. Laser data were collected with a pulse density of 7.7 m^− 2. Three different terrain models were used to process the airborne laser point cloud in order to assess the effects of different pre-processing parameters on small tree detection. Greater than 91% of all trees > 1 m tall registered positive laser height values regardless of terrain model. For smaller trees (< 1 m), positive height values were found in 5-73% of the cases, depending on the terrain model considered. For this group of trees, the highest rate of trees with positive height values was found for spruce. The more smoothed the terrain model was, the larger the portion of the trees that had positive laser height values. The accuracy of tree height derived from the laser data indicated a systematic underestimation of true tree height by 0.40 to 1.01 m. The standard deviation for the differences between laser-derived and field-measured tree heights was 0.11-0.73 m. Commission errors, i.e., the detection of terrain objects — rocks, hummocks — as trees, increased significantly as terrain smoothing increased. Thus, if no classification of objects into classes like small trees and terrain objects is possible, many non-tree objects with a positive height value cannot be separated from those actually being trees. In a monitoring context, i.e., repeated measurements over time, we argue that most other objects like terrain structures, rocks, and hummocks will remain stable over time while the trees will change as they grow and new trees are established. Thus, this study indicates that, given a high laser pulse density and a certain density of newly established trees, it would be possible to detect a sufficient portion of newly established trees over a 10 years period to claim that tree migration is taking place.     

Application of stochastic filtering for lifetime prediction

This paper introduces a stochastic filtering modeling approach for predicting the remaining lifetime of a component based on information on the stochastic degradation process and uncertain condition monitoring measurements. The model is illustrated by a case study, where the degradation is assumed to be a simplified fatigue crack growth process. The model accounts for uncertainties in both degradation process and condition measurements in a sound way. If completed with information on costs of monitoring, failure and replacement, such model could be used in optimizing both the condition monitoring intervals and, e.g. the replacement time for the component.     

New mechanisms in photo-assisted MOVPE of II-VI semiconductors

The first detailed comparison has been made of the metalorganic vapor phase epitaxy growth rates of CdTe, ZnTe, and ZnSe, measured in situ with laser reflectometry. The comparison also includes the photo-assisted growth with visible radiation from an argon ion laser. Using a standard Group II precursor (DMCd or DMZn.TEN) partial pressure of 1.5 × 10⁻⁴ atm, VI/II ratio of 1 and DIPM (M = Te, Se) the maximum growth rates are in the region of 10 to 15 AU/ s. Decrease in growth rates of ZnTe at higher temperatures or higher laser powers have been attributed to the desorption from the substrate of unreacted Te precursor. The behavior of DTBSe is quite different from DIPSe for both pyrolytic and photo-assisted growth. The maximum growth rate is around 1 AU/ s with very little photo-enhancement, except at 300°C. Secondary ion mass spectroscopy analysis of hydrogen concentration in the ZnSe layers shows high concentrations, up to 5.9 × 10¹⁹ atoms cm⁻³ for DTBSe grown ZnSe under pyrolytic conditions. These results show that the growth kinetics play an important part in the incorporation of hydrogen and passivation of acceptor doped material.     

Use of chemical variation and predation as plant defenses byEncelia farinosa against a specialist herbivore

Larvae of the monophagous herbivore,Trirhabda geminata, selectively eat particular plants and plant parts of its natural host,Encelia farinosa. Measurements of leaf damage and larval positions on branches through time support this observation. Time-lapse movie photography revealed that larvae are sufficiently mobile to search most of a plant in a 48-hr period and that aggregations were the result of larval activity and not directly the result of oviposition. Experiments withT. geminata larvae on artificial diets containing a range of natural concentrations of chemical extracts fromE. farinosa leaves showed that the larvae grew significantly slower and had a lower overall survivorship at the high concentration. Combining the results of all choice tests, larvae appeared unable to distinguish between high- and low-concentration agar diets. Considered individually, larval preferences for natural production concentrations changed as the season progressed. Early-season larvae preferred low-concentration leaves, while late-season larvae preferred high-concentrations. Measurements of chemical and nitrogen content of leaves selected by larvae in the field confirmed this pattern. Percent parasitism in field-collected larvae increased with season as the larval population decreased. This combination of slowed growth and increasing parasitism and predation is a putative defense strategy ofEncelia farinosa to prevent adaptation by a specialist herbivore to the total range of compounds elaborated.     

Fracture mechanics global approach concepts applied to creep slow crack growth in a medium density polyethylene (MDPE)

Creep fracture by slow crack growth is studied in a medium density polyethylene at 60 °C and 80 °C. Whereas elastic-plastic fracture mechanics load parameters fail to provide a unique temperature-independent correlation, that of the fracture mechanics for creeping solids C^∗ is proved to be relevant since this parameter correlates very well with the time to failure. Correlation established on both full notched creep tensile and double edge notched tensile tests was validated on cracked gas-pipe samples tested under hydrostatic pressure, extending the use of time to failure versus C^∗ diagram to predict lifetime of engineering components.     

The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphire

This paper presents a comparative study of the properties of GaN grown by organometallic vapor phase epitaxy, using both a GaN and A1N buffer layer, as a function of sapphire orientation (c-plane vs a-plane). Results are presented for varying the thickness of the buffer layer, varying the growth temperature of the GaN film, and also varying the ammonia/trimethylgallium mass flow ratio. The electron Hall mobilities of GaN films grown on an A1N buffer layer were, in general, higher compared to films grown using a GaN buffer layer. In addition, growth on a-plane sapphire resulted in higher quality films (over a wider range of buffer thicknesses) than growth on c-plane sapphire. The room temperature electron mobilities were also found to be dependent on, not only the growth temperature, but also the ammonia/trimethylgallium mass flow ratio.