糠醛装置腐蚀机理分析及防护

重质糠醛精制装置设备腐蚀严重与糠醛氧化变质有关,通过分析装置设备腐蚀机理和糠醛氧化、变质的原因,提出了用N_2汽提回收和原料脱水等改进措施。     

Oxidation behavior of silicide coating on Ti3SiC2-based ceramic

A silicide coating was prepared on Ti₃SiC₂-based ceramic by pack cementation to improve the oxidation resistance of Ti₃SiC₂, which is a technologically important material for high temperature applications. The microstructure, phase composition and oxidation resistance of the coated sample were investigated. The results demonstrated that the silicide coating was mainly composed of TiSi₂ and SiC. A single layer of a mixture of SiO₂ and TiO₂ was formed on the surface of the coated sample during isothermal oxidation at 1100 °C and 1200 °C for 20h. Compared to Ti₃SiC₂, the parabolic rate constant of silicide coated Ti₃SiC₂ decreased by 2~3 orders of magnitude. Furthermore, the coated sample showed much better cyclic oxidation resistance than Ti₃SiC₂ during the cyclic oxidation at 1100 °C for 400 times. However, during the preparation of the coating, a number of fine cracks formed in the outer layer of the coating. When these cracks penetrated the whole coating during the cyclic oxidation, the oxidation rate was accelerated, which degraded the oxidation resistance. Electronic Publication     

瓦楞纸板用抗水淀粉胶配方及性能研究

简要分析了玉米淀粉胶的组成及对其质量的影响，重点对粘合剂的防水性进行了研究，叙述了瓦楞纸板用抗水粘合剂的配制及工艺过程，并与常规方法制备的粘合剂进行了性能比较，测定了抗水时间，得出了瓦楞纸板用抗水粘合剂的最佳配制比例。     

纳米ZnO薄膜制备及液态源掺杂

用真空蒸发法在玻璃和单晶硅片 (10 0 )上制备Zn薄膜 ,然后对Zn薄膜进行氧化、热处理获得纳米ZnO薄膜。对在硅片上制备的Zn薄膜一次性进行高温掺杂、氧化获得纳米ZnO∶P和ZnO∶B薄膜。研究不同氧化、掺杂温度和时间对薄膜结构、电学性能的影响。结果表明 :氧化温度和时间对ZnO薄膜结构影响较大 ,液态源掺P可明显改善纳米ZnO薄膜的导电性能、结构特性和化学组分     

HCl氧化物MOS结构质子辐照诱导的界面陷阱效应

用微分电容法研究质子辐照HCl氧化物铝栅MOS结构诱导的界面陷阱,栅氧化层在1 160℃很干燥的、含0～10％HCl的气氛中热生长而成,质子辐照能量为120～300keV,注入总剂量范围为8×10~(13)～1×10~(16)p/cm~2。结果表明,辐照诱导的界面陷阱能级密度随质子能量、剂量增加而增加。然而,氧化层中掺入6％HCl时,辐照诱导的界面陷阱明显减少。这样,已能有效地改变MOS器件的抗辐照性能。实验结果可用H~+二级过程解释。     

过一硫酸的合成及其在铀水冶中的应用

文章介绍了选择过一硫酸合成的最佳条件及进行生产的可行性。介绍了过一硫酸用于含铀煌斑岩、辉绿岩、花岗岩及炭板岩矿石提取铀时,与常规酸浸方法对比,有很好的经济效益和对环境的保护价值。     

Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

大港渣油掺兑催化油浆氧化沥青的研究

重油催化裂化外甩油浆中富含芳烃，可望在国产原油生产优质道路沥青上发挥作用。对大港环烷基渣油中掺兑一定比例的油浆后氧化改善道路沥青性质的可能性进行了研究，结果表明：渣油掺兑油浆氧化，不仅可以有效改善沥青延度，同时也为油浆的合理利用开辟了一条新途径。     

Non-invasive headspace measurement for characterizing oxygen-scavenging in polymers

A non-invasive headspace analysis method to measure rate and amount of oxygen uptake in oxygen-scavenging polymers is presented. Oxygen uptake data for metal-catalyzed poly(1,4-butadiene) at 30 °C are provided to illustrate the method. These data were obtained by measuring oxygen headspace concentration above the scavenging polymer with an OxySense^® 200T non-invasive oxygen sensor, and, for comparison, oxygen uptake was measured with an analytical balance. Excellent agreement was observed between these two independent experiments.     

A study of synthesizing benzaldehydes from propenylbenzenes and cinnamic acid derivatives

Propenylbenzenes and cinnamic acid derivatives yield correspondingly substituted benzaldehydes when oxidized by lead-ruthenium pyrochlore oxide in the presence of sodium hydrochlorite as a co-oxidant at pH 11 under heterogeneous conditions. The reaction of terminal and internal aliphatic alkenes under similar conditions affords no aldehydes.