液氮温区同轴脉冲管制冷机的实验研究

脉冲管制冷机冷头朝上布置可以使制冷机与超导器件的耦合更方便 ,但对G -M型脉冲管制冷机 ,重力会对这种布置方式产生不利影响。对双向进气型脉冲管制冷机 ,直流和耦合传热会共同影响脉冲管制冷机的性能。介绍了液氮温区G -M型同轴脉冲管制冷机的实验结果 ,主要研究了蓄冷器温度分布和重力对脉冲管制冷机性能的影响     

新型非蒸散消气剂的激活温度和吸气性能的实验研究

对主要成分为Zr和Co的新型非蒸散消气剂进行了活化温度及吸气性能的实验研究。实验表明其活化温度为200—250℃，对N2，H2等活性气体有很好的抽速，对惰性气体He等无抽速。     

An Electronic Approach to Materials Design

A molecular orbital approach to materials design has recently made great progress. This approach is based on the electronic structure calculations by the DV-Xα cluster method. In this paper recent progress in this approachis reviewed. In particular     

High temperature transport kinetics in heteroepitaxial LaFeO3 thin films

Heteroepitaxial LaFeO₃(1 1 0) thin films with a thickness of 150 nm were grown on LaAlO₃(0 0 1) by reactive sputtering in an inverted cylindrical magnetron geometry. Equilibrium conductivity was measured as a function of partial pressure of oxygen at T=1000 °C, and logσ plotted vs. logP(O₂) showed a minimum in conductivity for P(O₂)=10⁻¹¹ atm and a linear response between 10⁻¹⁰ and 1 atm. This linear response makes thin films of LaFeO₃ a promising material for oxygen sensor applications. We have also measured the time response of the film conductivity upon an abrupt change in the partial pressure of ambient oxygen from 10⁻² to 10⁻³ atm, which was determined at 60 s for T=700 °C and <3.5 s at T=1000 °C.     

α-Fe_2O_3(SO_4~(2-),Sn)气敏电阻的温度响应特性

在气敏温度区域内研究了α-Fe_2O_3(SO_4~(2-),Sn)材料的电阻-温度特性,认为表面结构的变化导致温度特性出现峰值并呈现气敏性。可利用空气中电阻温度特性提供的信息改性或发现新的气敏材料。     

波形刃铣刀片铣削温度试验分析

进行了铣削温度试验 ,采用改进的人工热电偶法 ,利用动态数据采集系统 ,对波形刃铣刀片的铣削温度进行了采集。利用C语言和MATLAB软件对试验数据进行了分析 ,拟合出温度—时间 (T t)曲线 ,初步得到了受热密度函数 ,为温度场的可视化打下有力的基础     

Development of cable fault location method using fiber optic distributed temperature sensor

When ground-fault problems occur on a cable line, immediate fault location and restoration are required. Therefore, various new methods to locate the fault point instantaneously have been investigated to replace such conventional methods as the Murray loop method and the pulse radar method [1]. These methods require a long time to locate the fault point. One possible fault location method is to sense the temperature rise following a ground fault using a fiber optic distributed temperature sensor. Application of this method was found feasible through sensing the temperature rise at a ground-fault test using a thermocouple as a temperature sensor with test cables [4]. A power/optical composite cable was prepared experimentally and after verifying its thermal mechanical performance, the temperature rise at an incidence of a fault was determined and the anticipated performance was demonstrated in a ground-fault test. This article describes the outline of the test.     

Microstructure and thermal behavior of Sn-Zn-Ag solders

The microstructure and thermal behavior of the Sn-Zn-Ag solder were investigated for 8.73–9% Zn and 0–3.0% Ag. The scanning electron microscopy (SEM) analysis shows the Ag-Zn compound when the solder contains 0.1% Ag. X-ray diffraction (XRD) analysis results indicate that Ag₅Zn₈ and AgZn₃ become prominent when the Ag content is 0.3% and above. Meanwhile, the Zn-rich phase is refined, and the Zn orientations gradually diminish upon increase in Ag content. The morphology of the Ag-Zn compound varies from nodular to dendrite structure when the Ag content increases. The growth of the Ag-Zn compounds is accompanied by the diminishing of the eutectic structure of the Sn-9Zn solder. Differential scanning calorimetry (DSC) investigation reveals that the solidus temperature of these solders exists at around 198°C. A single, sharp exothermic peak was found for the solders with Ag content less than 0.5%. Liquidus temperatures were identified with the DSC analysis to vary from 206°C to 215°C when the Ag content ranges from 1.0% to 3.0%     

高温稀土永磁Sm2(Co,Cu,Fe,Zr)17 的制备和性能

制备了高温稀土永磁材料Sm(Coba1Fe0．26Cu0．05Zr0．026)7．0，研究了磁性能与工艺条件的关系．结果表明：提高烧结温度可使材料的Br和(BH)max增大，但是使Hci降低；适当提高真空预烧温度，可使材料在较低烧结温度下致密化，具有较高的Hci和(BH)max和温度稳定性．真空预烧温度过高使性能的急剧降低，其主要原因是Sm的析出．在最佳工艺条件下材料的磁性能参数分别为：Br1．08T3Hci2286kA／m，Hcb932kA／m，(BH)max220．8kJ／m^3；β20-200℃为-0．19％／℃．