Temperature dependant flash memory erase transient simulation (Part I)

We present a detailed and accurate physics based transient simulation for modeling flash memory erasing at ambient and non-ambient temperatures. Typical cells are erased by moving electrons from the floating gate to the drain, source or substrate. Part I of this paper addresses substrate erase modeling using a simulation based on the solution to Poisson’s equation with temperature as an independent variable. The goal of this paper is to demonstrate the derivation of an accurate erase simulation and show the effects of temperature on the threshold voltage shift during the erase process. Several papers have been published on this topic but fail to present detailed derivations and none using this exact set of equations to model the temperature dependent erasing process.     

基于LabVIEW的绕组器件温度测试系统

将数字表与计算机进行连接,通过LabVIEW搭建整个测试系统,很好地将软件与硬件结合,实现阻值自动测量和曲线拟合图形的自动生成,顺利解决传统断电电阻测量方法费时费力的问题.经过多次不同时间参数和取样间隔的测试数据比较分析,多次与原有方法和热电偶测试方法的数据比对,证明本次基于LabVIEW的自动温度测试系统设计可靠准确.     

Temperature gradient controlled crystal growth from TIPS pentacene-poly(α-methyl styrene) blends for improving performance of organic thin film transistors

6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) from simple drop casting typically forms crystals with random orientation and poor areal coverage, which leads to device-to-device performance variation of organic thin film transistors (OTFTs). Previously, a temperature gradient technique was developed to address these problems. However, this approach simultaneously introduced thermal cracks due to the thermally induced stress during crystallization. These thermal cracks accounted for a reduction of charge transport, thereby impacting the device performance of TIPS pentacene based OTFTs. In this work, an insulating polymer, poly(α-methyl styrene) (PαMS) was blended with TIPS pentacene to relieve the thermal stress and effectively prevent the generation of thermal cracks. The results demonstrate that the incorporation of PαMS polymer combined with the temperature gradient technique improves both the hole mobility and performance consistency of TIPS pentacene based OTFTs.     

红外热释电传感器的温度稳定性

本文推出红外热释电传感器的响应率与温度的函数式，并提供和分析了实验结果，理论和实验表明，热释电传感器的性能很大程度上取决于其前放级的设计水平。     

倍波长法测温技术的研究

研制出一种新型红外比色测温仪，其主要特点是工作波长λ2=2λ1， 即倍波长关系，与一般比色测温仪相比较，可以减小1%的测量误差，从而提高准确度1%，测温范围600～3000℃，研究了比辐射率问题，利用黑体探头校正比辐射率，可应用于冶金工业中。     

一种基于遗传算法的温度控制方法研究

提出一种基于遗传算法的温度控制方法,这种方法就是将控制系统的输入值编码成遗传算法的染色体,利用遗传算法对其进行优化并实现对温度系统的控制。模拟实验和真实实验的结果表明此方法是可行的,有效的。     

数据库技术在温室温湿度过程控制中的应用

本文讨论了在温室温湿度过程控制系统中数据库技术的应用,完成了在温湿度控制系统中数据库的软件设计。使用Windows的MSComm通信控件进行串行通信,实现与MCU组成的控制器的通信,运用Access数据库对控制器采集的温湿度数据进行存储和处理,并利用控制器进行温室温湿度过程控制。     

The profile of temperature and voltage dependent series resistance and the interface states in (Ni/Au)/Al0.3Ga0.7N/AlN/GaN heterostructures

The temperature dependence of capacitance-voltage (C-V) and the conductance-voltage (G/w-V) characteristics of (Ni/Au)/Al_0.3Ga_0.7N/AlN/GaN heterostructures were investigated by considering the effect of series resistance (R_s) and interface states N_ss in a wide temperature range (79-395 K). Our experimental results show that both R_s and N_ss were found to be strongly functional with temperature and bias voltage. Therefore, they affect the (C-V) and (G/w-V) characteristics. The values of capacitance give two peaks at high temperatures, and a crossing at a certain bias voltage point (∼3.5 V). The first capacitance peaks are located in the forward bias region (∼0.1 V) at a low temperature. However, from 295 K the second capacitance peaks appear and then shift towards the reverse bias region that is located at ∼−4.5 V with increasing temperature. Such behavior, as demonstrated by these anomalous peaks, can be attributed to the thermal restructuring and reordering of the interface states. The capacitance (C_m) and conductance (G/w-V) values that were measured under both reverse and forward bias were corrected for the effect of series resistance in order to obtain the real diode capacitance and conductance. The density of N_ss, depending on the temperature, was determined from the (C-V) and (G/w-V) data using the Hill-Coleman Method.     

燃气彩偏窑的温度控制与安全保护

燃气彩偏窑是以气体燃料作为能源,通过对燃烧过程的自动控制,达到温度精确控制,满足彩偏磁芯烧结工艺要求。同时,对燃烧过程中的熄火、燃烧气体和助燃空气压力超过正常范围、排烟不畅等进行有效控制,保证安全生产。     

应用于温度传感器的Sigma-Delta调制器的设计

本文设计了一个应用于温度传感器的Sigma-Delta调制器。该调制器采用二阶单环一位的结构,通过开关电容型全差分电路的使用,减小了偶次谐波、衬底以及电源噪声,达到了提高精度和降低功耗的目的。本设计采用Global foundries 0.18μm CMOS工艺,电源电压为1.8V,过采样率为256,采样时钟频率为5 kHz。仿真结果表明该调制器信噪比达92.3 dB,整个调制器的功耗仅为1 mW。