电子设备可靠性的加速试验

简要介绍了可靠性加速试验基本原理和一般流程,以及可靠性试验技术形成和发展。提出了可靠性加速试验的实施规划,并重点阐述了可靠性加速试验中的高加速寿命试验（HALT）和高加速应力筛选试验（HASS）的相关内容,详细介绍了两者的区别和实施方法。针对试验应力类型选择、试验层次和试验条件的确定等方面进行了说明,给出了基本应用原则...     

面向文章流量预测的特征筛选与分析

探究微信公众号文章阅读量预测所需特征。首先,爬取目标公众号在指定期限内的所有文章,估计其阅读量达到稳定所需的时间,再对数据进行清洗。其次,通过包括分词模型、主题概率模型等多种技术和数据处理方法进行特征筛选,提取到文章及文章的标题、正文等包括词频、主题、文章发布情况等多种特征,构成125个变量。最后,通过假设检验探究所提取特征与阅读量之间的关系,分析并为公众号提供具有指导意义的文章流量影响因素。     

Assessing political second screening behavior and personality traits: The roles of economic development,freedom of expression and monochromatic vs. polychromatic cultures

This study focuses on an emerging media multitasking phenomenon called second screening or dual screening. Employing two-wave panel-data from 19 countries, we test whether the Big Five personality traits help explain the use of an additional screen or device while watching political content on TV to discuss the program with others or to look up for additional information. Results show that extraversion positively predicts political second screening. In contrast, agreeableness and openness to new experience are negatively related to political second screening. Moreover, multilevel analysis is performed to test whether the between-country variation is related to economic, political and cultural indicators.     

Rapid Combinatorial Synthesis and Chromatography Based Screening of Phosphorescent Iridium Complexes for Solution Processing

This work reports the combinatorial synthesis and screening of phosphorescent iridium complexes as solution processable emitters for OLEDs. The approach taken here allows for the rapid synthesis, isolation, spectroscopic characterization and identification of the libraries based on chromatographic methods. Subsequent analysis of the irradiation induced degradation provides insight on the stability of the complexes under continuous excitation. The method is versatile and can easily be applied to other metal complexes or organic dyes for various applications, e.g., in electroluminescence, photovoltaics and sensing.     

SOI电路可靠性筛选技术及失效机理研究

可靠性筛选是提高电子产品良率的重要技术手段。针对绝缘体上硅（SOI）技术日益广泛的应用,通过大量实验研究了SOI电路的常用筛选试验,并对失效样品进行了相应的失效机理研究。首先讨论了SOI电路失效模式和筛选方法之间的关系;其次,针对三款SOI电路分别开展了老炼应力、高温贮存及恒定加速度试验来进行可靠性筛选;最后,利用光发射显微镜、扫描电子显微镜、聚焦离子束和激励源诱导故障测试等失效分析手段,对失效样品进行了失效模式及机理分析,揭示了失效根源,为改进工艺、提高SOI电路可靠性提供了依据。     

基于低频噪声检测光耦器件可靠性的频域筛选方法?

针对光耦器件可靠性筛选,提出全频段阈值筛选方法检测光耦器件内部低频噪声。根据光耦器件内部的低频噪声完成光耦器件可靠性的筛选。实验中利用光耦器件测试系统检测200只光耦器件内部的低频噪声,计算这200只光耦器件全频段平均噪声谱,确定筛选的阈值,再根据光耦器件可靠性分类标准,判断被测器件可靠性等级。     

电子吊舱在现代雷达抗干扰测试中的设计应用

电子吊舱在外军的电子战装备中有着举足轻重的地位，在几次局部战争中发挥了巨大的作用。文中介绍了电子吊舱的设计及其应用，首先介绍了电子吊舱的分类及其功能，介绍了电子吊舱的系统组成及设计重点，然后分析了电子吊舱收发隔离及在压制干扰情况下对雷达的干扰效能，最后给出了典型的试验结果。     

Rapid Experimental Screening of High-Entropy Diborides for Superior Oxidation Resistance

Due to the huge composition space, composition screening is of great importance to the optimization of high-entropy diborides (HEBs) with exceptional oxidation resistance. However, related studies are lacking. Here, a novel rapid, effective strategy to fully screen the compositions on the oxidation resistance of HEBs is proposed. Specifically, the synthesis of the equiatomic 1- to 9-cation multicomponent diborides of the IVB, VB, and VIB groups in seconds via an ultrafast ultrahigh-temperature synthesis technique is realized. Subsequently, combined with the thermogravimetric analysis and first-principles calculations, the roles of incorporated elements are systematically explored. The results show that Zr, Cr, Ta, Nb, and W elements are the key to the improved oxidation resistance of HEBs, while Ti, Mo, and V elements are destructive. In particular, the positive roles of metal elements are mainly attributed to the partial dissolution of the generated metal oxides into the generated B₂O₃ glass, which can improve the viscosity of B₂O₃ and thus enhance its high-temperature stability and reduce the oxygen diffusion rate, as confirmed by the first-principles calculations. This study paves a way to rapidly screen the elements in HEBs, which can be a guide for further anti-oxidation designs.     

压力下屏蔽对有限深量子阱中施主结合能的影响

考虑电子有效质量、材料介电常数及禁带宽度随流体静压力的变化,以及准二维电子气对杂质库仑势的屏蔽影响,利用变分法讨论有限深量子阱中的施主杂质态能级.对GaAs/AlxGa1-xAs量子阱系统中的杂质态结合能进行了数值计算,给出结合能随铝组分、阱宽和压力的变化关系,并讨论了有无屏蔽时的区别.结果表明,屏蔽效应随着压力增加而增加且显著降低杂质态的结合能.     

Double S-Shaped Polarization – Voltage Curve and Negative Capacitance from Al2O3-Hf0.5Zr0.5O2-Al2O3 Triple-Layer Structure

The negative capacitance (NC) effect, recently discovered in a fluorite-based ferroelectric thin film, has attracted great attention as a rescue to overcome the scaling limitations of the conventional memory and logic devices of highly integrated circuits. The NC effect manifesting an S-shaped polarization–voltage (P–V) curve is initially interpreted by a 1-dimensional Landau Ginzburg Devonshire (LGD) model. However, a series of recent studies have found that this effect can also be explained by the inhomogeneous stray field energy (ISE) model. In this study, by extending the ISE model in the ferroelectric (FE)-dielectric (DE) layered structure, an analytical model that considers the influence of the interfacial screening charge distribution is presented. This model showed that the NC effect in the FE-DE heterostructure can be manifested in various forms other than a single S-shaped P–V curve. In particular, a double S-shaped P–V curve is expected from the fully compensated anti-parallel domain structure, confirmed experimentally in the actual Al₂O₃/(Hf_0.5Zr_0.5)O₂/Al₂O₃ triple-layer structure. Furthermore, to reveal the origin of the double S-shaped P–V curve, a multidomain LGD model is presented. It is confirmed that this phenomenon is attributed to the evolution of inhomogeneous stray field energy.