热镀锌表面锌渣缺陷的形成分析及改进研究

结合马钢第四钢轧总厂1#和2#镀锌线投产四年来的生产实践,对热浸镀锌的锌渣缺陷形成机理进行了分析,重点探讨了锌渣缺陷的产生原因,提出在实际生产中从工艺和设备上采取措施进行控制,减少锌渣缺陷的产生,提高镀锌板表面质量。     

Comparison of structural and photoluminescence properties of ZnO thin films grown by pulsed laser deposition and ultrasonic spray pyrolysis

ZnO thin films have been deposited by pulsed laser deposition (PLD) and ultrasonic spray pyrolysis (USP) method, respectively. X-ray diffraction and transmission electron microscopy characterizations indicate that ZnO film grown by PLD exhibits better crystallinity than that grown by USP. Photoluminescence spectra show that the near-band edge ultraviolet emission of film grown by PLD is narrower and shifts to higher energy, compared with that of film grown by USP. In the visible range, ZnO film grown by PLD exhibits four local level emission centered at 470 nm, 486 nm, 544 nm, and 613 nm, respectively, while the film grown by USP only presents a weak broad band emission centered at 502 nm. Hall measurement shows higher carrier density and lower hall mobility in ZnO film grown by PLD than that in film grown by USP. The higher density of intrinsic defects as well as higher crystallintiy is considered to account for the difference of photoluminescence in ZnO film grown by PLD with that in film grown by USP.     

从硫酸锌溶液净化渣回收锌和钴

西北铅锌冶炼厂锌系统湿法冶炼工艺采用二段深度净化除去硫酸锌溶液中的杂质。文章研究了从二段净化产生的渣中回收锌和其它有价金属的工艺。提出了新产生的二段净化渣用水分散一加稀硫酸溶液选择性浸出锌的工艺。完成了1kg级的小型试验、15kg级的放大试验。研究结果显示，控制浸出过程pH≥3、5，终点pH3．5～4．5，可使锌95％以上进入溶液返回主流程回收，钴90％以上残留在渣中待处理，达到了锌、钴分离的目的。     

锌精矿多种金属分离新工艺研究

以内蒙较大型锌矿选矿精矿为研究对象,最终确立焙烧-硫酸浸锌、铜-氰化浸银工艺。Zn、Cu、Ag浸出率分别为95.01%、94.13%、89.10%,并具有试剂耗量低、技术简单、易实施等优势。     

铅塔冷凝器的散热研究

分析了韶关冶炼厂锌精馏过程中铅塔冷凝器实际冷凝能力不足,冲顶事故时有发生的原因,并对二系统1#铅塔冷凝器散热进行了测试。测试结果表明:除顶部壁面处于良好的工作状况外,冷凝器各竖壁面的温度沿高度方向的变化显著,温差较大;在同一高度处,冷凝器北壁面温度明显高于东、西两侧壁面温度。     

Inside Front Cover: Self‐Assembled Highly Faceted Wurtzite‐Type ZnS Single‐Crystalline Nanotubes with Hexagonal Cross‐Sections (Adv. Mater. 16/2005)

Highly faceted wurtzite‐type ZnS nanotubes with hexagonal cross‐section morphologies have been self‐assembled via a controllable high‐temperature thermal‐chemical reaction route in work reported by Yin and co‐workers on p. 1972. The self‐assembly growth along c‐axis to highly hexagonal‐faceted ZnS single‐crystalline nanotubes is associated with the crystallographic characteristics, such as the non‐central and polar surfaces of the wurtzite‐type ZnS structure. The faceted ZnS nanotubes grow along the <0001> direction, and are closed by low‐index faces of non‐polar {1000} faces. The inside cover and insets show electron microscopy and scanning electron microscopy images of the faceted ZnS nanotubes.     

Effects of oxygen pressure on the growth of pulsed laser deposited ZnO films on Si(0 0 1)

ZnO thin films were prepared on Si(0 0 1) substrates using a pulsed laser deposition (PLD) technique and then their growth and properties were investigated particularly as a function of ambient O₂ pressure during film growth. It was found that the microstructure, crystallinity, orientation and optical properties of the films grown are strongly dependent on the O₂ pressures used. Completely c-axis oriented ZnO films are grown in a low O₂ pressure regime (5×10⁻⁴-5×10⁻² Torr), whereas a randomly oriented film with a much lower crystallinity and a rougher grained-surface is grown at an O₂ pressure of 5×10⁻¹ Torr. This deterioration in film quality may be associated with the kinetics of atomic arrangements during deposition. Our results suggest that ambient O₂ pressure is an important processing parameter and should be optimized in a narrow regime in order to grow a ZnO film of good properties in PLD process.     

Second harmonic generation in self-assembled ZnO microcrystallite thin films

The second-order non-linear susceptibility components were measured using 1.064 μm incident light for ZnO thin films of various thicknesses from 24.4 to 283 nm self-assembled on sapphire substrates by laser molecular beam epitaxy. It was found that the values of the non-linear susceptibility for the films are almost the same as those of bulk material, except the samples with thicknesses ranging from 35 to 64.8 nm, which show a large enhancement effect. For the sample with a thickness of 44.4 nm, the second-order non-linear susceptibility components were found to be approximately 14.7 pm/v for d₃₁, 15.2 pm/v for d₁₅, and −83.7 pm/v, a value approximately 14 times that of the bulk material, for d₃₃. The second-order non-linear coefficient enhancement in the thin films may be resulted from the microcrystallite structures.