用工农业废料配制的两种堆肥培育观赏植物

由工农业废料配制的两种堆肥作为试验用的基质:C1——酿造啤酒等废料(酵母和麦芽)加修剪下的柠檬树枝;C2——橄榄研磨厂废水的固体级分加橄榄树叶。以每种堆肥与泥炭藓泥炭或商品基质(CS)按不同的比例混合,可配制成16种基质。尽管基质的物理和理化特性例如总孔隙度和电导率(EC)都是合适的,但由堆肥提供的养分(氮和钾)释放缓慢,对金盏花发育的影响尤为明显。另一方面,由于对盐分含量敏感,EC和氯化物浓度是影响蒲包草生长的主要因素。为供金盏花发育的适宜的基质可以通过含量高达75?与泥炭或高达50?与CS混合,以及高达50?与泥炭或CS混合使用。对蒲包花来说,基质中堆肥比例应较低,可用50?与泥炭或CS混合,也可以用25?与泥炭或CS混合使用。因此,只要基质至少含有25%的泥炭或CS,源于工农业废料的堆肥可作为培育观赏植物的泥炭和CS的替代品。     

Relation between crystal structure and lattice oxygen content of sintered reaction-bonded silicon nitride

When reaction-bonded silicon nitride containing MgO/Y₂O₃ additives is sintered at three different temperatures to form sintered reaction-bonded silicon nitride (SRBSN), the thermal conductivity increases with sintering temperature. The β-Si₃N₄ (silicon nitride) crystals of SRBSN ceramics were synthesized and characterized to investigate the relation between the crystal structure and the lattice oxygen content. The hot-gas extraction measurement result and the crystal structure obtained using Rietveld analysis suggested that the unit cell size of the β-Si₃N₄ crystal increases with the decrease in the lattice oxygen content. This result is reasonable considering that the lattice oxygen with the smaller covalent radius substitutes nitrogen with the larger one in the β-Si₃N₄ crystals. The lattice oxygen content decreased with increasing sintering temperature which also correlated with increase in thermal conductivity. Moreover, it is noteworthy from the viewpoint that it may be possible to apply the lattice constant analysis for the nondestructive and simple measurement of the lattice oxygen content that deteriorates the thermal conductivity of the β-Si₃N₄ ceramics.     

阴极电弧离子沉积TiN／Ti镀层腐蚀特性

采用电化学线性极化、交流阻抗谱技术研究了不同基片偏压上阴极电弧沉积TiN/Ti镀层在50×10-6g/gCl-溶液中的腐蚀行为,并对镀层腐蚀的机理进行了探讨。结果表明:基片偏压–400V时,镀层耐蚀性能好;镀层表面的针孔是诱发镀层和基材体系发生点蚀、电偶腐蚀的主要缺陷。     

Preparation and characterization of GaN films grown on Ga-diffused Si （111） substrates

Hexagonal GaN films were prepared by nitriding Ga2O3 films with flowing ammonia. Ga2O3 films were deposited on Ga-diffused Si (111) substrates by radio frequency (r.f.) magnetron sputtering. This paper have investigated the change of structural properties of GaN films nitrided in NH3 atmosphere at the temperatures of 850, 900, and 950℃ for 15 min and nitrided at the temperature of 900℃ for 10, 15, and 20 rain, respectively. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were used to analyze the structure, surface morphology and composition of synthesized samples. The results reveal that the as-grown films are polycrystalline GaN with hexagonal wurtzite structure and GaN films with the highest crystal quality can be obtained when nitrided at 900℃ for 15 min.     

Letter: Solution‐processed flexible zinc‐tin oxide thin‐film transistors on ultra‐thin polyimide substrates

In this letter, solution‐processed flexible zinc‐tin oxide (Z_0.35T_0.65O_1.7) thin‐film transistors with electrochemically oxidized gate insulators (AlOx:Nd) fabricated on ultra‐thin (30 µm) polyimide substrates are presented. The AlOx:Nd insulators exhibited wonderful stability under bending and excellent insulating properties with low leakage current, high dielectric constant, and high breakdown field. The device exhibited a mobility of 3.9 cm²/V · s after annealing at 300 °C. In addition, the flexible device was able to maintain the electricity performance under various degrees of bending, which was attributed to the ultra‐thin polyimide substrate.     

Paving the Way for High-Performance UVB-LEDs Through Substrate-Dominated Strain-Modulation

AlGaN-based ultraviolet-B light-emitting diodes (UVB-LEDs) exhibit great potential in phototherapy, vitamin D3 synthesis promotion, plant growth regulation, and so on. However, subjected to the excess compressive strain induced by the large lattice mismatch between multiple quantum wells (MQWs) and AlN, UVB-LEDs that simultaneously satisfy the requirements of high light output power (LOP), low working voltage, and excellent stability are rarely reported. Here, a substrate-dominated strain-modulation strategy is proposed. By precisely manipulating the strain in AlN grown on nano-patterned sapphire substrate (NPSS) to a slightly tensile one, the compressive strain in the following Al_0.55Ga_0.45N underlayer and Al_0.28Ga_0.72N/Al_0.45Ga_0.55N MQWs is successfully suppressed. As a result, an outstanding UVB-LED with a peak wavelength at 303.6 nm is achieved. The 20 × 20 mil² UVB-LED chip shows a wall-plug efficiency (WPE) of 3.27% under a forward current of 20 mA and a high LOP of 57.2 mW with an extremely low voltage of 5.87 V under a forward current of 800 mA. It is more exciting that the LOP degradation is as low as 17% after 1000 h operation under a forward current density of 75 A cm⁻², showing excellent stability. The here-developed UVB-LED, with a high LOP and excellent reliability, will definitely promote the applications of AlGaN-based UVB-LEDs.     

Spontaneously Embedded Scattering Structures in a Flexible Substrate for Light Extraction

A flexible hazy substrate (FHS) with embedded air bubbles to increase light extraction efficiency of organic light‐emitting diodes (OLEDs) is reported. In order to embed the air bubbles in the flexible substrate, micropatterned substrates are fabricated by plasma treatment, and then coated with a planarization layer. During the planarization layer coating, air bubbles are trapped between the substrate and the planarization layer. The haze of the FHS can be controlled from 1.7% to 68.4% by changing the size of micropatterns by adjusting the plasma treatment time. The FHS shows average haze of 68.4%, average total transmittance of 90.3%, and extremely flat surface with average roughness (R _a) of 1.2 nm. Rigorous coupled‐wave analysis and finite‐difference time‐domain simulations are conducted to demonstrate that the air bubbles in the substrate can effectively extract photons that are trapped in the substrate. The FHS increases the power efficiency of OLEDs by 22% and further increases by 91% combined with an external extraction layer. Moreover, the FHS has excellent mechanical flexibility. No defect has been observed after 10 000 bending cycles at bending radius of 4 mm.     

Anisotropic Materials for Skeletal‐Muscle‐Tissue Engineering

Repair of damaged skeletal‐muscle tissue is limited by the regenerative capacity of the native tissue. Current clinical approaches are not optimal for the treatment of large volumetric skeletal‐muscle loss. As an alternative, tissue engineering represents a promising approach for the functional restoration of damaged muscle tissue. A typical tissue‐engineering process involves the design and fabrication of a scaffold that closely mimics the native skeletal‐muscle extracellular matrix (ECM), allowing organization of cells into a physiologically relevant 3D architecture. In particular, anisotropic materials that mimic the morphology of the native skeletal‐muscle ECM, can be fabricated using various biocompatible materials to guide cell alignment, elongation, proliferation, and differentiation into myotubes. Here, an overview of fundamental concepts associated with muscle‐tissue engineering and the current status of muscle‐tissue‐engineering approaches is provided. Recent advances in the development of anisotropic scaffolds with micro‐ or nanoscale features are reviewed, and how scaffold topographical, mechanical, and biochemical cues correlate to observed cellular function and phenotype development is examined. Finally, some recent developments in both the design and utility of anisotropic materials in skeletal‐muscle‐tissue engineering are highlighted, along with their potential impact on future research and clinical applications.     

Coatings of indium tin oxide nanoparticles on various flexible polymer substrates: Influence of surface topography and oscillatory bending on electrical properties

Abstract— Coatings of indium tin oxide (ITO) nanoparticles on different flexible polymer substrates were investigated with respect to the achievable sheet resistance and their electrical behavior under oscillatory bending. As substrate materials, polyethyleneterephthalate (PET), polyethylenenaphthalate (PEN), polyetheretherketone (PEEK), and polyimide (PI) were chosen, the surface resistances on the different polymer substrates were compared as a function of annealing temperature and surface topography. The surface topography, which has a strong influence on the surface resistance, was characterized by means of a white‐light confocal (WL‐CF) microscope. On the PET substrate, which exhibits the smoothest surface, the coating of ITO nanoparticles shows the lowest sheet resistance of 2 kΩ/□ for a layer thickness of 3 μm and an annealing temperature of 200°C. Furthermore, the electrical behavior of coatings of ITO nanoparticles under oscillatory bending was investigated using a special device. These coatings show a cyclic change of the conductivity which can be explained by an alternating compression and extension of crack flanks under the applied stress. Due to the growing number of cracks with increasing number of cycles, a decrease of the conductivity is observed in the bent state as well as in the balanced state. For a small bending radii, the decrease of the conductivity is stronger due to more cracks caused by the higher tensile stresses in the layer. The electrical behavior of the coatings of the annealed ITO nanoparticles on PET films under oscillatory bending was compared with commercially available sputtered ITO coatings. The annealed coatings of ITO nanoparticles demonstrate better electrical properties under oscillatory bending than coatings of sputtered ITO. The different electrical behavior under oscillatory bending can be related to differences in crack formation.     

CuO formation control as a function of mixed ratio of Cu-free powders in the synthesis of YBCO superconductors on Cu substrates

YBa₂Cu₃O_x (Y123) superconducting films were fabricated on Cu substrates using a simple screen-printing method, from Cu-free powders (Y₂O₃ and BaCO₃). In the process, CuO, which causes superconducting properties of Y123 films to deteriorate, was formed on the film surface. By varying the atomic ratio of Y to Ba (Y:Ba = 1:1∼1:4), the ratio needed to prevent CuO formation was found for the film surface that had been heat-treated at 980^∘C for 17 s. The film, with the ratio of Y to Ba (Y:Ba = 1:1), is reheat-treated at 930^∘C for 9 min 30 s to form a superconducting Y123 phase. It was possible to prevent CuO formation by controlling the ratio of Cu-free powders in the mixture and to fabricate YBCO superconductors on Cu substrates using a two-step heat-treatment.