Deposition of CoPtP films from citric electrolyte

Magnetically hard CoPtP (up to 40 μm thickness) films for MEMS application were deposited from citrate electrolyte and considered in terms of their composition, structure, magnetic characteristics and deposition conditions. Films containing 83-92 at.% (a/o) Co were deposited in the presence of NaH₂PO₂ in the electrolyte, with current efficiency of about 20% (deposition rate 10-12 μm/h). Coercivity 2.7-2.8 kOe and remanence 3.0 kG were achieved magnetizing in the direction normal to the film plane. According to XRD analysis, films seem to consist of hexagonal phase of CoPt solid solutions. Current efficiency, composition and morphology of the films, as well as their magnetic characteristics, were influenced by the electrolyte prehistory and total charge passed through the electrolyte in previous operation.     

热电Ca3Co4O9薄膜的一致取向生长及其激光感生电压效应

利用脉冲激光沉积(PLD)法,在蓝宝石(0001)平衬底上成功制备了c轴一致取向的Ca3Co4O9薄膜。利用X射线衍射(XRD)分析测定了薄膜的相结构和生长取向。研究了不同衬底温度与不同原位氧压对Ca3Co4O9薄膜结晶质量与生长取向的影响,确定了最佳生长条件。利用这一条件在倾斜Al2O3(0001)衬底上制备了Ca3Co4O9薄膜。研究发现,当Ca3Co4O9薄膜被波长248nm,脉冲宽度20ns的脉冲激光照射时,在薄膜两端存在较大的激光感生热电电压(LITV)信号,峰值电压达到4.4V,其上升沿为36ns,半峰全宽(FWHM)为131ns。可以认为这种激光感生热电电压信号是由于Ca3Co4O9薄膜面内与面间泽贝克(Seebeck)系数张量的各向异性引起的。     

显示器件用液晶材料及其特性

由于向列相液晶的单轴光学性质并具有相当低的粘度而被广泛应用于显示器件。已合成多种类型液晶化合物,并采取多种液晶化合物混合配方,从而获得了实用的显示器件液晶材料。本文综述用于显示器件的向列相液晶材料的发展和类型,着重介绍近年来开发的新型材料,并对其特性进行分析和评价。     

四频差动激光陀螺中差分损耗的探讨

理论分析了四频差动激光陀螺中由于镜片的Ｓ－Ｐ相位和Ｑ的各向异性及光束不过水晶片光轴等因素所引起的左、右旋偏振模式间的差分损耗。这种差分损耗会导致激光陀螺中零漂的形成。这一问题的研究对陀螺性能的改进具有重要的参考价值     

Magnetic anisotropy in (Ga,Mn)As on GaAs(1 1 3)As studied by magnetotransport and ferromagnetic resonance

The magnetic anisotropy of a 40-nm-thick (Ga,Mn)As film with 5% Mn grown on GaAs(1 1 3)A is studied by means of magnetotransport and ferromagnetic resonance (FMR) spectroscopy. In addition to the cubic and a weak uniaxial in-plane anisotropy, two uniaxial out-of-plane contributions along [1 1 3] and [0 0 1] are found. Using the anisotropy parameters determined from FMR, the longitudinal and transverse resistivities measured as a function of magnetic field orientation and strength are well modelled within the framework of a single ferromagnetic domain. In particular, the low-field data which are strongly affected by sudden jumps of the magnetization are well reproduced.     

[110]晶向近本征硅单晶双光子吸收各向异性

以沿[110]晶向切割的近本征硅单晶为样品,通过研究样品对连续波固体激光器所产生的1.3μm的近红外光的双光子吸收所诱导的光电流对入射光偏振方向的依赖关系,研究了双光子吸收的各向异性.测得了硅单晶对该波长的光的三阶极化率张量χ(3)的各向异性系数为-0.25,两个独立分量的比值χxxxx/χxxyy的幅度为2.4,并基于前期工作所得的χxxyy的结果,进而确定了另一分量χxxxx的值大约为1.49×10-19m2/V2.     

Enhanced Performance Consistency in Nanoparticle/TIPS Pentacene‐Based Organic Thin Film Transistors

In this study, inorganic silica nanoparticles are used to manipulate the morphology of 6,13‐bis(triisopropylsilylethynyl)‐pentacene (TIPS pentacene) thin films and the performance of solution‐processed organic thin‐film transistors (OTFTs). This approach is taken to control crystal anisotropy, which is the origin of poor consistency in TIPS pentacene based OTFT devices. Thin film active layers are produced by drop‐casting mixtures of SiO₂ nanoparticles and TIPS pentacene. The resultant drop‐cast films yield improved morphological uniformity at ～10% SiO₂ loading, which also leads to a 3‐fold increase in average mobility and nearly 4 times reduction in the ratio of measured mobility standard deviation (μ_Stdev) to average mobility (μ_Avg). Grazing‐incidence X‐ray diffraction, scanning and transmission electron microscopy as well as polarized optical microscopy are used to investigate the nanoparticle‐mediated TIPS pentacene crystallization. The experimental results suggest that the SiO₂ nanoparticles mostly aggregate at TIPS pentacene grain boundaries, and 10% nanoparticle concentration effectively reduces the undesirable crystal misorientation without considerably compromising TIPS pentacene crystallinity.     

铝锂合金力学性能的各向异性

针对当前困扰铝锂合金实际应用的各向异性问题，概述关于铝锂合金中各向异性的表现规律，产生机理及对于降低各向异性所采用的方法等方面的研究现状和进展，对铝锂合金各向异性表现与微观组织结构的关系以及目前克服各向异性所采用方法的局限性进行分析。就此提出，若彻底解决这一问题则必须采用更先进的合金化方法及热加工工艺，研制新一代铝锂合金的观点和研究方向。     

Simulation of Nano Si and Al Wires Growth on Si(1O0) Surface

Growth of nano Si and Al wires on the Si(100) surfaces is investigated by computer simulation, including the anisotropic diffusion and the anisotropic sticking. The diffusion rates along and across the substrate dimer rows are different, so are the sticking probabilities of an adatom, at the end sites of existing islands or the side sites. Both one-dimensional wires of Si and Al are perpendicular to the dimer rows of the substrate, though the diffusion of Si adatoms is contrary to that of Al adatoms, i.e. Si adatoms diffuse faster along the dimer rows while Al adatoms faster across the dimer rows. The simulation results also show that the shape anisotropy of islands is due to the sticking anisotropy rather than the diffusion anisotropy,which is in agreement with the experiments.     

Strain Anisotropies and Self‐Limiting Capacities in Single‐Crystalline 3D Silicon Microstructures: Models for High Energy Density Lithium‐Ion Battery Anodes

This study examines the crystallographic anisotropy of strain evolution in model, single‐crystalline silicon anode microstructures on electrochemical intercalation of lithium atoms. The 3D hierarchically patterned single‐ crystalline silicon microstructures used as model anodes were prepared using combined methods of photolithography and anisotropic dry and wet chemical etching. Silicon anodes, which possesses theoretically ten times the energy density by weight compared to conventional carbon anodes, reveal highly anisotropic but more importantly, variably recoverable crystallographic strains during cycling. Model strain‐limiting silicon anode architectures that mitigate these impacts are highlighted. By selecting a specific design for the silicon anode microstructure, and exploiting the crystallographic anisotropy of strain evolution upon lithium intercalation to control the direction of volumetric expansion, the volume available for expansion and thus the charging capacity of these structures can be broadly varied. We highlight exemplary design rules for this self‐strain‐limited charging in which an anode can be variably optimized between capacity and stability. Strain‐limited capacities ranging from 677 mAhg^?1 to 2833 mAhg^?1 were achieved by constraining the area available for volumetric expansion via the design rules of the microstructures.