An Instance-Learning-Based Intrusion-Detection System for Wireless Sensor Networks

This paper proposes an instance?learning?based intrusion?detection system (IL?IDS) for wireless sensor networks (WSNs). The goal of the proposed system is to detect routing attacks on a WSN. Taking an ...     

Optimization of black oxide coating thickness as an adhesion promoter for copper substrate in plastic integrated-circuit packages

Copper-oxide coating applied onto the copper substrate has emerged as an alternative to metallic coatings to improve adhesion with polymeric adhesives and molding compounds. The interfacial-bond strengths between the black oxide-coated Cu substrate and epoxy-based, glob-top resin were measured in button-shear tests, and the failure mechanisms were identified from the fracture-surface examination. The emphasis was to establish the correlation between the coating thickness, the surface roughness, and the interfacial adhesion with respect to treatment time. It was found that at the initial stage of treatment a thin layer of flat, cuprous oxide developed, above which fibrillar-cupric oxide was formed with further treatment until saturation with densified fibrils at about 150 sec. The interfacial-bond strength between the oxide-coated copper substrate and glob-top resin increased gradually with increasing treatment time, until the bond strength reached a plateau constant after a treatment for about 150 sec. There was a functional similarity between the oxide thickness, the surface roughness, and the interface-bond strength with respect to treatment time. A treatment time of 150 sec is considered an optimal condition that can impart the highest interface adhesion.     

镍层耐硝酸腐蚀性测试——一种简单的预先探测ENIG镍层“黑盘”现象的测试方法

随着更加精细的SMT、BGA等表面贴装技术的运用,化学沉镍金(ENIG)作为线路板最终表面处理得到了越来越广泛的应用,同时可怕的“黑盘”现象也随之更广泛地“流行”起来,直接导致贴装后元器件焊接点不规则接触不良。为了贯彻执行最好的流程控制和采取有效的预防措施,了解这种焊接失败的产生机理是非常重要的,及早的观测到可能发生“黑盘”现象的迹象变得同样关键。本文介绍了一种简单的预先探测ENIG镍层“黑盘”现象的测试方法-镍层耐硝酸腐蚀性测试,这种测试可以用于作为一种常规的测试方法监测一般化学沉镍溶液在有效使用寿命范围内新鲜沉积的镍层的质量。利用Weibull概率统计分析在不同的金属置换周期(MTO)下镍层的可靠性能表现。结合试验结果得出了一个镍层耐硝酸腐蚀性的判定标准。     

Self‐Assembly of Atomically Thin Chiral Copper Heterostructures Templated by Black Phosphorus

The fabrication of 2D systems for electronic devices is not straightforward, with top‐down low‐yield methods often employed leading to irregular nanostructures and lower quality devices. Here, a simple and reproducible method to trigger self‐assembly of arrays of high aspect‐ratio chiral copper heterostructures templated by the structural anisotropy in black phosphorus (BP) nanosheets is presented. Using quantitative atomic resolution aberration‐corrected scanning transmission electron microscopy imaging, in situ heating transmission electron microscopy and electron energy‐loss spectroscopy arrays of heterostructures forming at speeds exceeding 100 nm s^?1 and displaying long‐range order over micrometers are observed. The controlled instigation of the self‐assembly of the Cu heterostructures embedded in BP is achieved using conventional electron beam lithography combined with site specific placement of Cu nanoparticles. Density functional theory calculations are used to investigate the atomic structure and suggest a metallic nature of the Cu heterostructures grown in BP. The findings of this new hybrid material with unique dimensionality, chirality, and metallic nature and its triggered self‐assembly open new and exciting opportunities for next generation, self‐assembling devices.     

Variations in the leaf standard,chemical composition and quality of black tea (Camellia sinensis) due to plucking intervals

Green leaf standard, chemical composition and quality of black tea (Camellia sinensis (L) O Kuntze) change with plucking intervals. Long plucking intervals lead to poor leaf standard with a lot of mature leaves and lower theaflavins, the sum of volatile flavour compounds imparting a sweet flowery aroma (group II volatile flavour compounds), caffeine contents and tasters' evaluations of black tea. The sum of volatile flavour compounds imparting inferior, grassy, green flavour (group I volatile flavour compounds) to tea, however, increases with long plucking intervals.     

Content of various elements in different parts of the tea plant and in infusions of black tea from Southern India

Contents of various elements in dyferent parts of the tea plant (shoot, mature leaf, small stem, thick wood and root), black tea manufactured by the crush-tear-curl and orthodox processes, and tea brew after 1 and 5 min of infusion were determined by inductively coupled plasma atomic emission spectrometry. From these, the amount of each element assimilated in the production of 1000 kg of marketable tea, as well as the quantity of each element brought into infusion and thus possib f y taken up through drinking tea, were calculated and discussed. Among the various elements assimilated by the tea plant, the shoot jraction (economically important for manufacturing commercial tea) contained high concentrations of N, P, K and Mg while the mature leaf accumulated Al, Bu, Ca, Cd, Mn, Pb and Sr. Of the dgerent elements brought into infusion while brewing black tea, the amount of K was found to be the largest (> 10000 μg g⁻¹ tea) followed by P (700–1200 μg g⁻¹), Mg (300–700 μg g⁻¹), Ca and A1 (each 150–300 μg⁻¹), Mn (60–150 μg g⁻¹), Cu, Na, Si and Z n (each 6–50 μg g⁻¹), B, Ba, Cr, Fe, Ni and Pb (each Id μg g⁻¹), and Sr, Co and Gd (each <1μg g⁻¹). The proportion of the totalamount of an element brought into infusion showed that the elements Ba, Ca, Fe and Sr were less soluble (<10 % of total amount), Al, B, Cd, Co, Cr, Cu, Mg, Mn, P, Pb, Si and Zn were moderately soluble (10–50 %), and K, Nu and Ni were highly soluble (>50%). The overall mean of the extent of solubility of all elements in 1 and 5 min showed that, out of the amount soluble in 5 min, about 68% was dissolved within 1 min.     

阵列处理器中改进几乎空白子帧算法的并行化实现

两层异构网络中出现的小区间干扰协调是当前异构网络干扰问题研究的热点。针对软件实现增强小区调度几乎空白子帧(ABS)的干扰方案存在处理数据量大、速度慢的缺点,基于可重构阵列结构提出了一种动态ABS干扰协调的并行化硬件实现方案。该算法在增强小区内根据用户数动态分配ABS比例,以改善小区边缘用户的信道容量,通过流水线的方式使用多个轻核处理元(PE)实现并行计算以提高运算效率。测试结果表明,使用12个PE同时调度实现算法的映射,运行1983个周期,其性能比单个PE提升77.03%,该算法的并行计算能力得到显著提升,宏基站用户的吞吐量可以达到4.76 Mbit/s.     

Al‐Doped Black Phosphorus p–n Homojunction Diode for High Performance Photovoltaic

2D layered materials based p–n junctions are fundamental building block for enabling new functional device applications with high efficiency. However, due to the lack of controllable doping technique, state‐of‐the‐art 2D p–n junctions are predominantly made of van der Waals heterostructures or electrostatic gated junctions. Here, the authors report the demonstration of a spatially controlled aluminum doping technique that enables a p–n homojunction diode to be realized within a single 2D black phosphorus nanosheet for high performance photovoltaic application. The diode achieves a near‐unity ideality factor of 1.001 along with an on/off ratio of ≈5.6 × 10³ at a low bias of 2 V, allowing for low‐power dynamic current rectification without signal decay or overshoot. When operated under a photovoltaic regime, the diode's dark current can be significantly suppressed. The presence of a built‐in electric field additionally gives rise to temporal short‐circuit current and open‐circuit voltage under zero external bias, indicative of its enriched functionalities for self‐powered photovoltaic and high signal‐to‐noise photodetection applications.     

Field‐Induced n‐Doping of Black Phosphorus for CMOS Compatible 2D Logic Electronics with High Electron Mobility

Black phosphorus (BP) has been considered as a promising two‐dimensional (2D) semiconductor beyond graphene owning to its tunable direct bandgap and high carrier mobility. However, the hole‐transport‐dominated characteristic limits the application of BP in versatile electronics. Here, we report a stable and complementary metal oxide semiconductor (COMS) compatible electron doping method for BP, which is realized with the strong field‐induced effect from the K⁺ center of the silicon nitride (Si_xN_y). An obvious change from pristine p‐type BP to n type is observed after the deposit of the Si_xN_y on the BP surface. This electron doping can be kept stable for over 1 month and capable of improving the electron mobility of BP towards as high as ~176 cm² V^–1 s^–1. Moreover, high‐performance in‐plane BP p‐n diode and further logic inverter were realized by utilizing the n‐doping approach. The BP p‐n diode exhibits a high rectifying ratio of ~10⁴. And, a successful transfer of the output voltage from “High” to “Low” with very few voltage loss at various working frequencies were also demonstrated with the constructed BP inverter. Our findings paves the way for the success of COMS compatible technique for BP‐based nanoelectronics.     

黑磷纳米盘-层等离激元系统中的各向异性可调多阶强耦合

黑磷支持各向异性的表面等离激元,可用于设计具备更多功能的原理性器件。用时域有限差分法数值模拟了中红外到远红外波段基于黑磷的层-盘-层系统中不同等离激元模式之间的杂交行为。通过动态调节黑磷中的载流子浓度,可以实现两个晶格方向上强耦合现象的产生与控制。对不同模式间的耦合进行分析并计算,得到吸收光谱中的拉比分裂能最高可达42.9 meV。此外,还计算了偏振角度对各向异性强耦合的影响,其最高可以实现6个吸收频带。该模型可为构建未来在中远红外波段工作的基于二维材料紧凑型各向异性等离激元器件提供基础。