Microstructure Evolution of Intermetallics Produced by Laser Powder Deposition

NiAl intermetallic alloys are potential high temperaturestructural materials in aeronautical and astronauticalindustries[1].However,the poor ductility andtoughness at room temperature severely restrict theirengineering applications[2,3].It is important todevelop new technology to product intermetallicmaterials for the improvement of the comprehensiveproperties and the workability.Laser powder depositionhas been used to synthesize many new materials.Furthermore,if incorporated with rapid proto…     

大尺寸TiB2-Cu-Ni金属陶瓷块体的燃烧合成及准热等静压致密化

利用燃烧合成结合准热等静压 (PHIP)技术成功制备了直径为 2 40mm的大尺寸TiB2 Cu Ni金属陶瓷 ,对合成产物进行了X射线衍射 (XRD)、扫描电镜 (SEM)和力学性能等实验研究。XRD结果表明反应产物中只有TiB2 和 (Cu ,Ni)两相。SEM分析发现增强相TiB2 陶瓷颗粒已经形成骨架状 ,其间为 (Cu ,Ni)基体相 ,TiB2 颗粒形貌为近等轴状 ,尺寸细小且较均匀。合成产物的致密度为 94.2 % ,弯曲强度和断裂韧性分别达到 5 99.4MPa和12 .5 6MPa·m1/ 2 。     

响应型供应链中供应商综合能力的评价研究

随着全球制造的出现,供应链管理在制造业管理中得到普遍应用,成为一种新的管理模式,供应商选择是其中一个研究的热点。不同供应链中供应商选择是有所不同的,因此供应商选择方案应该结合企业所处供应链的类型来确定。在对响应型供应链特征进行分析的基础上,建立了一套适用于制造企业的供应商评价指标体系,并用模糊综合评价法结合实例加以验证。     

Ti—C—Al体系热爆合成过程

采用整体加热燃烧合成法（即热爆合成）制备了ＴｉＣ－Ａｌ复合体系，利用差热分析（ＤＴＡ）、Ｘ射线衍射分析（ＸＲＤ）和扫描电镜（ＳＥＭ）等手段研究了Ｔｉ－Ｃ－Ａｌ体系中升温速度及Ａｌ含量对ＴｉＣ反应合成过程的影响，分析了Ａｌ基体对ＴｉＣ粒子的形成机理．结果表明，在ＴｉＣ反应合成过程中，首先是Ｔｉ与Ａｌ反应形成Ｔｉ与Ａｌ的化合物，放出热量，随后促使Ｔｉ与Ｃ的放热反应发生，合成ＴｉＣ时放热产生的高温使Ｔｉ与Ａｌ的化合物分解，从而制得ＴｉＣ－Ａｌ复合体系；升温速度及Ａｌ含量只有超过一定值时，该体系才能在较低温度发生热爆反应；当Ａｌ的质量分数从１０％升至５０％时，ＴｉＣ的粒度从５．０μｍ阵至０．５μｍ．     

SHS-PHIP法制备TiC-Ni(Mo)金属陶瓷

采用Ti粉、碳黑、Ni粉和Mo粉的混合物，通过自蔓延高温合成(SHS)结合准等静压(PHIP)方法制备了TiC—Ni(Mo)金属陶瓷材料。X射线衍射结果表明，材料由TiC相和Ni合金粘结相组成。扫描电镜观察，球形的TiC颗粒较均匀地分布在Ni合金粘结相中,TiC颗粒尺寸约为2～4μm，在局部较大的TiC颗粒之间存在微孔缺陷。SHS—PHIP法制备的TiC—Ni(Mo)金属陶瓷材料具有良好的致密性和优良的力学性能。     

外场作用下由工业TiOSO4液合成介孔二氧化钛

以工业硫酸氧钛为钛源,采用复合模板合成路线,分别于超声,微波和水热外场作用下合成了介孔二氧化钛前驱体.通过调节反应体系的pH值来控制TiOSO4液的水解和缩聚速率.煅烧脱除模板后得到锐钛型的介孔二氧化钛.产物采用XRD,氮等温吸附脱附,粒度分布,SEM,TEM,SAD和X射线能谱分析(XPS)等技术进行了表征.结果表明具有强极化作用和温和水热环境的外场利于制备结构更佳的介孔二氧化钛;超声振动利于介观结构的形成.在微波辐照下,所制得介孔二氧化钛的比表面积为146.6 m2/g,平均孔径2.57 nm,晶粒尺寸13.65 nm.超声、微波和水热较常规合成方法更利于形成和稳定介孔结构.     

纳米TiO2的燃烧合成及其光催化性能

以TiOSO4为原料,加入燃烧剂,采用燃烧合成法制备了纳米TiO2;考察了燃烧剂的种类、燃烧剂的加入量、pH值、点火温度、煅烧时间等对产物的影响;以甲基橙溶液为实验对象,研究了该TiO2的光催化性能.结果表明:以柠檬酸为燃烧剂,当TiO(NO3)2和柠檬酸的摩尔比为9:15,溶液pH＞5,点火温度为550℃时合成TiO2.XRD测试表明,合成产物为单一锐钛矿型,晶体粒度为14.8 nm;TEM测试表明,产品粒度分布均匀;当用高压汞灯照射2 h时,甲基橙的降解率为91%.     

成分配比对自蔓延高温合成Ni-Al金属间化合物的影响

以镍粉和铝粉为主要原料，采用自蔓延高温合成技术，制备Ni-Al金属间化合物。研究了成分配比对热爆反应的影响，绘制了热爆反应曲线，分析了热爆反应机理及产物的显微组织特征。研究结果表明：成分配比和压坯密度对热爆反应均有不同程度的影响。增加Al含量、加大压坯密度都会缩短热爆起始时间、降低热爆起始温度；反应起始温度低于Ni-Al系的最低共晶温度（640℃）。本文初步确定了Ni-Al系的热爆反应是由固固扩散反应引发的。Ni-32Al的反应产物为均一的NiAl相。     

Synthesis and characterization of La0.8Sr0.2MO3−δ (M=Mn, Fe, or Co) cathode materials by induction plasma technology

In this work, nanopowders of perovskite cathode materials (La_0.8Sr_0.2MnO_3−δ, La_0.8Sr_0.2FeO_3−δ, and La_0.8Sr_0.2CoO_3−δ), for use in solid oxide fuel cells (SOFC), were successfully synthesized, using induction plasma techniques. Their compositions, structures, morphology, particle size distributions, and BET specific surface areas were determined for comparison with their counterparts prepared by the Pechini method and by the glycine-nitrate combustion (GNC) technique. The particle sizes of the plasma-synthesized powders are mostly around 63 nm. These plasma-synthesized powders are generally globular, their BET specific surface areas being about 26 m²g⁻¹, approximately twice those of powders prepared by the GNC and Pechini methods. These plasma-synthesized powders are readily reproducible and are not agglomerated. Their individual particle sizes and distributions are very independent of their composition.     

Preparation and characterization of GaN films grown on Ga-diffused Si （111） substrates

Hexagonal GaN films were prepared by nitriding Ga2O3 films with flowing ammonia. Ga2O3 films were deposited on Ga-diffused Si (111) substrates by radio frequency (r.f.) magnetron sputtering. This paper have investigated the change of structural properties of GaN films nitrided in NH3 atmosphere at the temperatures of 850, 900, and 950℃ for 15 min and nitrided at the temperature of 900℃ for 10, 15, and 20 rain, respectively. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were used to analyze the structure, surface morphology and composition of synthesized samples. The results reveal that the as-grown films are polycrystalline GaN with hexagonal wurtzite structure and GaN films with the highest crystal quality can be obtained when nitrided at 900℃ for 15 min.