Microstructure coarsening during static annealing of 60Sn40Pb solder joints: III intermetallic compound growth kientics

The growth of the total (Cu₃Sn+Cu₆Sn) intermetallic compound layer in Cu-60Sn40Pb solder joints during static annealing at 50°C to 150°C was described by the equation hi=h_o+A_o exp(−Q_a/RT)t^p with h_o=0–0.3 μm, p=0.38–0.70, A_o=1.9×10⁻⁴–3.4×10⁻⁴ m/s^p, and Q_a=25.5–30.9 kJ/mole. These constants are within the range of those obtained by others and give values of D_o and Q which are in reasonable accord with those for the diffusion coefficients in Cu₃Sn and Cu₆Sn₅ determined in diffusion couples. The deviation of the values of the time exponent p from the ideal of 0.5 for diffusion growth may be due to inaccuracies or errors pertaining to the measured thickness (especially h_o) and the complex nature of the diffusion process.     

含裂隙含水层污染物生物降解数值方法

本文讨论了含裂隙介质地下水污染物输运与生物降解非线性方程组数值求解方法.方程含有对流项、扩散项、生长、死亡、吸附、解吸、趋化和孔隙与裂隙介质界面间的交换项的非线性偶合，使算法十分困难.本文讨论了无生化过程时的几种求解方法，数值结果表明：用三次迎风插值法对常见的对流项占优势，且场变量有较大梯度的问题较适用.在讨论有生化反应过程时，利用对流项与生化反应项的特征时间量级估算，给出了求生化过程作用子步的时间步长估算办法.用上述方法所得到的模拟结果与解析解、无化学反应和有化学反应的实测值对比，吻合很好     

Diffusion and interdiffusion in Zn-disordered AlAs-GaAs superlattices

Several superlattices (SL's) with different layer thicknesses, grown by molecular beam epitaxy (MBE), were disordered via low temperature (550?600°C) Zn diffusions to investigate layer thickness effects on both the Zn diffusion process and the Al-Ga interdiffusion process. The Zn diffusion coefficients were measured using secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES) and found to be ?10^?12 cm²/sec, increasing somewhat with decreasing layer thickness. The activation energy for the Zn diffusion process ranged from 3.1 eV for an 1100Å/period SL to 2.1 eV for a 320Å/period SL. The Al-Ga interdiffusion coefficient and the activation energy associated with the interdiffusion process were calculated from AES depth profiles. The coefficient is on the order of 10^?16 cm²/sec and the activation energy is approximately 1 eV, independent of the SL layer thickness.     

基于神经网络的传感器网络数据汇聚模型研究

由于定向扩散路由无线传感器网络中的数据重复传送,导致数据融合困难,制约实际应用。针对定向扩散路由传感器网络特点,提出基于定向扩散和神经网络的无线传感器网络数据汇聚模型DAM-DD&NN。借助有导师学习的BP神经网络提高感知数据的精确性、降低感知数据的时间空间冗余度;借助无导师学习的神经网络降低数据传送过程中的冗余度。理论分析和仿真结果表明, DAM-DD&NN模型能提高网络的综合性能。     

Image annotation using high order statistics in non-Euclidean spaces

Automatic image annotation is a promising way to achieve more effective image retrieval and image analysis by using keywords associated to the image content. Due to the semantic gap between low-level visual features and high-level semantic concepts of an image, however, the performances of many existing algorithms are not so satisfactory. In this paper, a novel image classification scheme, named high order statistics based maximum a posterior (HOS-MAP), is proposed to deal with the issue of image annotation. To bridge the gap between human judgment and machine intelligence, the proposed scheme first constructs a dissimilarity representation for each image in a non-Euclidean space; then, the information of dissimilarity diffusion distribution for each image is achieved with respect to the high-order statistics of a triplet of nearest neighbor images; finally, a maximum a posteriori algorithm with the information of Gaussian Mixture Model and dissimilarity diffusion distribution is adopted to estimate the relevance between each annotation and an input un-annotated image. Experimental results on a general-purpose image database demonstrate the effectiveness and efficiency of the proposed automatic image annotation scheme.     

Diffusion of Selenium in Liquid-Phase Epitaxy–Grown Hg<Subscript>0.78</Subscript>Cd<Subscript>0.22</Subscript>Te

We present preliminary results on Se diffusion in liquid-phase epitaxy (LPE)–grown HgCdTe epilayers. The LPE Hg_0.78Cd_0.22Te samples were implanted with Se of 2.0 × 10¹⁴/cm² at 100 keV and annealed at 350–450°C in mercury saturated vapor. Secondary ion mass spectrometry (SIMS) profiles were obtained for each sample. From a Gaussian fit, we find that the Se diffusion coefficient D _Se is about 1–2 orders of magnitude smaller than that of arsenic. The as-implanted Se distribution is taken into account in case of small diffusion length in Gaussian fitting. The D _Se was found to satisfy the Arrhenius relationship .     

基于相邻小波系数的图像去噪算法

针对传统的小波去噪方法在滤除噪声上的明显不足,提出了一种基于相邻小波系数的图像去噪算法。充分考虑了滤噪系数与相邻系数间的相关性,首先采用3×3像素的系数滑动窗口对噪声系数进行均值采样,然后结合双阈值法对小波系数进行缩减。实验结果表明本算法明显优于传统的滤波算法,具有较高的信噪比,是一种有效、可行的图像去噪方法。     

Interfacial Connections between Organic Perovskite/n+ Silicon/Catalyst that Allow Integration of Solar Cell and Catalyst for Hydrogen Evolution from Water

The rapidly increasing solar conversion efficiency (PCE) of hybrid organic–inorganic perovskite (HOIP) thin-film semiconductors has triggered interest in their use for direct solar-driven water splitting to produce hydrogen. However, application of these low-cost, electronic-structure-tunable HOIP tandem photoabsorbers has been hindered by the instability of the photovoltaic-catalyst-electrolyte (PV+E) interfaces. Here, photolytic water splitting is demonstrated using an integrated configuration consisting of an HOIP/n⁺silicon single junction photoabsorber and a platinum (Pt) thin film catalyst. An extended electrochemical (EC) lifetime in alkaline media is achieved using titanium nitride on both sides of the Si support to eliminate formation of insulating silicon oxide, and as an effective diffusion barrier to allow high-temperature annealing of the catalyst/TiO₂-protected-n⁺silicon interface necessary to retard electrolytic corrosion. Halide composition is examined in the (FA_1-xCs_x)PbI₃ system with a bandgap suitable for tandem operation. A fill factor of 72.5% is achieved using a Spiro-OMeTAD-hole-transport-layer (HTL)-based HOIP/n⁺Si solar cell, and a high photocurrent density of −15.9 mA cm⁻² (at 0 V vs reversible hydrogen electrode) is attained for the HOIP/n⁺Si/Pt photocathode in 1 m NaOH under simulated 1-sun illumination. While this thin-film design creates stable interfaces, the intrinsic photo- and electro-degradation of the HOIP photoabsorber remains the main obstacle for future HOIP/Si tandem PEC devices.     

Evidence for Glass–glass Interfaces in a Columnar Cu–Zr Nanoglass

Comprehensive analyses of the atomic structure using advanced analytical transmission electron microscopy-based methods combined with atom probe tomography confirm the presence of distinct glass–glass interfaces in a columnar Cu-Zr nanoglass synthesized by magnetron sputtering. These analyses provide first-time in-depth characterization of sputtered film nanoglasses and indicate that glass–glass interfaces indeed present an amorphous phase with reduced mass density as compared to the neighboring amorphous regions. Moreover, dedicated analyses of the diffusion kinetics by time-of-flight secondary ion mass spectroscopy (ToF SIMS) prove significantly enhanced diffusivity, suggesting fast transport along the low density glass–glass interfaces. The present results further indicate that sputter deposition is a feasible technique for reliable production of nanoglasses and that some of the concepts proposed for this new class of glassy materials are applicable.     

嵌入固有模态函数的各向异性扩散方程用于图像降噪

该文利用经验模态分解技术对图像进行分解,获得表示图像不同频率属性的各个固有模态函数分量,并将代表图像高频信息和次高频信息的固有模态函数嵌入到Perona-Malik模型中。改进后的模型不仅在对高斯噪声降噪时优于原Perona-Malik模型,而且对椒盐噪声也能较好地去除。