RESEARCH ON DESIGN METHOD OF A MULTIPLE DISC WET BRAKE IN LUBRICATED ENVIRONMENT

The rmomechnical phenomena occurring between friction pairs greatly change the distributions oflining pressure and friction surface temperature of a multiple disc wet brake. It has become one of the maincauses of brake failure. In order to understand these thermomechanical phenomena, several design and mate-rial factors tha have great influence on thermomechanical phenomena, such as heat transfer coefficient, fric-tion factor, sliding velocity initial lining pressure and so on, are analyzed. An isothermal design method isproposed for designing a multiple disc wet brake.     

Delta4型外流式压力筛的长纤维浆筛选实践

介绍了Delta4型压力筛生产全漂白硫酸盐法马尾松浆的运行情况，对存在的问题进行分析探讨，并对比了技改重新选型后的生产情况。     

A new numerical analysis for a semi-circular surface crack

This note is concerned with a surface semi-circular crack by using the fracture analysis software FRANC3D developed by a fracture mechanics investigation group of Cornell University. Attention is specifically paid to the effect of the boundaries parallel to the crack on the stress intensity factors (SIFs).     

论家具企业质量管理中人的因素及其作用

人的因素在家具质量管理工作中有着举足轻重的作用,各个层次的工作者有着不同的质量职责,发挥不同的作用。本文立足人的因素来解析企业质量管理体系中各层工作者的质量工作,及对质量管理体系运行的作用。     

Simulation-based sequential analysis of Markov switching stochastic volatility models

We propose a simulation-based algorithm for inference in stochastic volatility models with possible regime switching in which the regime state is governed by a first-order Markov process. Using auxiliary particle filters we developed a strategy to sequentially learn about states and parameters of the model. The methodology is tested against a synthetic time series and validated with a real financial time series: the IBOVESPA stock index (São Paulo Stock Exchange).     

Understanding source effects in ADHD rating scales: Reply to DuPaul (2003).

G. J. DuPaul (see record 2003-02033-012) offered two suggestions for additional research to understand the strong source effects reported by R. Gomez, G. L Burns, J. A. Walsh, and M. A. de Moura (see record 2003-02033-001) in attention-deficit/ hyperactivity disorder (ADHD) rating scales. The first suggestion was to determine whether the source effects represent mostly bias or accuracy. The second suggestion was to minimize source effects through the development of better ADHD rating scales. Because source effects can represent bias or accuracy, it is important to minimize the bias aspect through content validation procedures prior to attempts to determine whether source effects better reflect bias or accuracy. This comment offers various suggestions to reduce the bias in ADHD rating scales. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Mathematical models of the VEGF receptor and its role in cancer therapy

We present an analysis of a stochastic model of the vascular endothelial growth factor (VEGF) receptor. This analysis addresses the contribution of ligand-binding-induced oligomerization, activation of src-homology 2 domain-carrying kinases and receptor internalization in the overall behaviour of the VEGF/VEGF receptor (VEGFR) system. The analysis is based upon a generalization of a Wentzel-Kramers-Brillouin (WKB) approximation of the solution of the corresponding master equation. We predict that tumour-mediated overexpression of VEGFRs in the endothelial cells (ECs) of tumour-engulfed vessels leads to an increased sensitivity of the ECs to low concentrations of VEGF, thus endowing the tumour with increased resistance to anti-angiogenic treatment.     

ZPG系列盘式真空过滤机的研制与应用

详细介绍了ZPG系列盘式真空过滤机的主要特点、基本原理和主要技术参数。对盘式真空过滤机的过滤理论进行了系统的研究 ,以及为提高过滤系数和降低滤饼水分所采取的关键措施。与传统的真空过滤机进行了对比 ,表明ZPG系列盘式真空过滤机的滤饼水分可以降低 1 %～ 3 % ,过滤系数提高 3 0 %～5 0 % ,过滤每吨精矿的能耗可以降低 5 0 %左右 ,使得ZPG系列盘式真空过滤机在国内各大冶金矿山得到全面推广使用 ,创造了巨大的经济效益和社会效益。     

Reversible changes of the fill factor in the ZnO/CdS/Cu(In,Ga)Se2 solar cells

The reversible persistent changes of the fill factor (FF) induced by the illumination and voltage bias along with changes in the electronic properties of the ZnO/CdS/Cu(In,Ga)Se₂ photovoltaic devices have been studied. Admittance spectroscopy and capacitance–voltage characterization reveal a correlation between the FF and the space charge distribution within the absorber. Our experiments provide evidence that a major source of FF loss in efficient devices is caused by excess negative charge close to the interface. We explain the persistent changes in the net acceptor concentration in the interface region by the relaxation effects due to compensating donors—the same mechanism, which leads to metastable changes of the doping level in the bulk of the absorber.