Analytical study of surface and bulk oxidation of Astroloy

Nickel-base alloys, such as Astroloy, used for aeronautical turbine disks, are sensitive to time-dependent cracking in environments containing oxygen. The mosaic structure of the alloy consisting islands (200 nm average size) surrounded by the -phase (100 nm thick) induces complex oxidation phenomena. Various analytical approaches allow the delineation of all the steps from segregation to oxidation occurring on the surface of such a duplex structure. The protection of Astroloy by its outer oxide layer against oxygen penetration was studied also, using alternative ¹⁶O₂ then ¹⁸O₂ oxidation. In association with STEM studies, it is shown that the outer oxide scale is not a real barrier against oxygen penetration and that inner precipitation of chronium (+ aluminium and titanium)-enriched oxides, takes place especially in the structure.     

超声和微波作用下制备纳米氧化铜

以氢氧化铜为前驱体，在超声和微波作用下制备纳米氧化铜。借助透射电镜（TEM）、X射线衍射（XRD）、粒度分析等手段，研究了超声、分散剂、微波等制备条件的影响。结果表明：采用该法可以制备粒径小（15nm）、分散良好的纳米氧化铜粉体；超声可使前驱体Cu（OH）2转变为CuO，并粉碎颗粒间形成的团聚；分散剂通过表面修饰抑制颗粒的团聚；微波加热促进了前驱体的转化，并抑制颗粒的长大。     

B和C对铸造TiAl基合金宏观和显微组织的影响

对比研究了B和C含量的变化对铸造TiAl基合金宏观和显微组织的影响。结果表明 ，B或C含量的增加均能细化TiAl基合金的晶粒，但二者的作用特点不同。B含量对宏观组织和晶粒尺寸的影响是渐进的，而C对其影响存在一个临界含量。显微观察表明，微量的B就能使合金析出TiB2，随着合金中B含量的增加，硼化物颗粒呈不同的形貌。对于含C合金，当C含量低于临界含量时，在光学尺度上观察不到碳化物相，而当C含量高于临界含量时，合金中生成大量的Ti2AlC碳化物颗粒。讨论了B和C细化TiAl基合金的机制。     

Fabrication and characterization of APT specimens from high dose heavy ion irradiated materials

The next generations of advanced energy systems will require materials that can withstand high doses of irradiation at elevated temperatures. Therefore, a methodology has been developed for the fabrication of high-dose ion-irradiated atom probe tomography specimens at a specific dose with the use of a focused ion beam milling system. The method also enables the precise ion dose of the atom probe tomography specimen to be estimated from the local concentration of the implanted ions. The method has been successfully applied to the characterization of the distribution of nanoclusters in a radiation-tolerant 14YWT nanostructured ferritic steel under ion irradiation to doses up to 400 displacements per atom.     

Instability of light illumination stress on amorphous In–Ga–Zn–O thin‐film transistors

Amorphous In–Ga–Zn–O thin‐film transistors (TFTs) have attracted increasing attention due to their electrical performance and their potential for use in transparent and flexible devices. Because TFTs are exposed to illumination through red, green, and blue color filters, wavelength‐varied light illumination tests are required to ensure stable TFT characteristics. In this paper, the effects of different light wavelengths under both positive and negative V_GS stresses on amorphous In–Ga–Zn–O TFTs are investigated. The TFT instability that is dependent on optical and electrical stresses can be explained by the charge trapping mechanism and interface modification.     

An introduction to the Information Display Measurement Standard 1, the first display measurement standard from the International Committee for Display Metrology

On June 1, 2012, the Information Display Measurement Standard version 1 was released. This is the first standard from the worldwide standard group, the International Committee for Display Metrology, a standards committee within SID, and it culminates several years worth of development from many contributors at various levels. It has 26 top‐level chapters and a total over 450 sections of all parts, including over 200 measurement sections and 8 appendices that cover 133 topics of display metrology, tutorials, technical discussions, and references. Herein is an overview of the Information Display Measurement Standard version 1, including the structure of the document, tips, tricks, and hidden features, how it is maintained, support material, a breakdown of its contents, and finally, a sampling of four of the over 200 measurements. The standard is available as a free download and can be found on the International Committee for Display Metrology home page — http://www.icdm‐sid.org .     

The effect of γ-sterilization on the pH-ChemFET behaviour

One of the key requirements biomedical and pharmaceutical sensors have to satisfy is their ability to withstand sterilization cycle. In this paper, the influence of γ-sterilization on the electrical and electrochemical characterizations of pH-sensitive chemical field effect transistors (pH-ChemFET) is examined before and after γ-irradiation. It is shown that γ-irradiation is suitable for pH-ChemFETs sterilization in the field of in-vitro analysis and more precisely for single-use bioreactors.     

Digital‐to‐analog converter with gamma correction on glass substrate for TFT‐panel applications

Abstract— Low‐temperature polysilicon (LTPS) technology has a tendency towards integrating all circuits on glass substrate. However, the poly‐Si TFTs suffered poor uniformity with large variations in the device characteristics due to a narrow laser process window for producing large‐grained poly‐Si TFTs. The device variation is a serious problem for circuit realization on the LCD panel, so how to design reliable on‐panel circuits is a challenge for system‐on‐panel (SOP) applications. In this work, a 6‐bit R‐string digital‐to‐analog converter (DAC) with gamma correction on glass substrate for TFT‐panel applications is proposed. The proposed circuit, which is composed of a folded R‐string circuit, a segmented digital decoder, and reordering of the decoding circuit, has been designed and fabricated in a 3‐μm LTPS technology. The area of the new proposed DAC circuit is effectively reduced to about one‐sixth compared to that of the conventional circuit for the same LTPS process.     

室温中波红外碲镉汞探测器激光辐照饱和特性的仿真

针对室温工作的光伏型碲镉汞中波红外探测器激光辐照饱和特性进行了仿真,结果表明,中红外激光对碲镉汞材料的加热效应以及光照导致零偏压阻抗降低,是影响探测器输出量子效率的重要因素。利用一维数值仿真方法,建立了室温碲镉汞pn结的模型,计算了稳态激光辐照下器件量子效率以及零偏压阻抗。理论计算了激光辐照下的稳态温度分布近似模型,并将温度场分布耦合到仿真计算中,发现衬底厚度会影响芯片的温升,从而显著影响器件饱和阈值的大小。另外,计算表明,随着光照强度的增加,器件的零偏压阻抗降低,并将仿真结果与实测芯片参数进行了比较。计算分析为设计高饱和辐照度阈值的中波红外碲镉汞探测器提供了参考。     

Performance of orthogonal frequency division multiplexing based M-ary quadrature amplitude modulation in asymmetrical dual-hop mixed RF-FSO transmission system

This paper investigates the performance of a dual-hop mixed relay system with radio frequency (RF) and free-space optics (FSO) communication under the effect of pointing error (PE) and atmospheric turbulence (AT). This paper considers a system where RF and FSO links are cascaded. The RF link is modeled by Nakagami-m fading, and the FSO link is modeled as gamma–gamma (G-G) fading channel. Both the channel models use orthogonal frequency division multiplexing (OFDM) with M-ary quadrature amplitude modulation (QAM). The expressions for probability density function, cumulative distribution function, signal-to-noise ratio, and ergodic capacity are derived. The moment generating function (MGF) of fading and the bit error rate (BER) of the OFDM-based M-ary QAM scheme is derived in terms of Meijer's G-function. It has been observed that, in fixed gain relay systems, the modulation scheme's BER is dominated by the SNR of the RF link. While in a variable gain relay system, the turbulence conditions of the FSO system affect the SNR and the BER of the modulation method. The feasibility of heterodyne detection and intensity modulation direct detection (IM/DD) is analyzed in terms of outage probability and ergodic capacity. The results can be used to choose the optimal modulation order and relay system for QAM-OFDM-based optical wireless systems.