Aqueous solution-processed InCl3 as an effective buffer layer to improve hole injection in simplified phosphorescent organic light emitting diodes

An effective anode buffer layer is demonstrated by aqueous solution-processed indium trichloride (sInCl₃) in simplified phosphorescent organic light emitting diodes (PhOLEDs). The hole injection is improved in sInCl₃ based PhOLEDs exhibiting better performance with decreased driving voltage, increased power efficiency compared to the traditional ultraviolet-ozone (UV-Ozone) treated ones. Then, the mechanism for the enhanced hole injection is investigated. Better electrode contact is found in sInCl₃ based hole dominated devices. Higher work function (∼0.60 eV) is detected on the sInCl₃-ITO anode and stable InCl bonds are formed on its surface compared to the UV-Ozone treated one according to the photoelectron spectroscopy.     

Feedback supported isolation structure for blocking of minority leakage carriers in power integrated circuits

A combination of two conventional junction isolation structures is used to produce a device, which significantly improves the blocking of minority carriers injected into the substrate of a power IC due to switching of an inductive load. Simulation results show that the connection scheme employed greatly enhances the efficiency of the structures. A substrate current reduction of up to four orders of magnitude compared to conventional junction isolation structures is achieved. The significance of doping profiles in the p-sinker region is evaluated.     

开关电流电路基本单元误差分析及其改进

开关电流技术(SI)是一种可取代开关电容技术的数据采样技术.首先介绍了SI技术,然后以SI电路基本单元为例,分析了SI电路存在的各种误差,并针对这些误差提出了解决方法;最后提出了一种新的改进电路.实验结果表明,采用TSMC 0.35μm工艺参数和Hspice仿真电路,所设计的电路误差小,输出波形理想,从而可达到预期的目的.     

Novel 4-(2,2-diphenyl-vinyl)-phenyl substituted pyrene derivatives as efficient emitters for organic light-emitting diodes

Two pyrene derivatives (PVPP and TPVPP) bearing 4-(2,2-diphenyl-vinyl)-phenyl side unit were developed for organic light-emitting diodes. Their photophysical, thermal, electrochemical, and electroluminescent properties as well as the film morphologies have been investigated in detail. Both of them exhibit high solid-state quantum yields, good thermal stability, and high glass-transition temperatures in the range of 127–150 °C. In particular, it is found that multiple side units can significantly affect the electrochemical properties to improve the electron injection. The LUMO energy level of TPVPP is −2.76 eV, which is very close to that of commonly used electron transport materials. The maximum luminance of OLED devices using TPVPP as an emitter layer is 103835 cd/m² with a maximum current efficiency of 5.19 cd/A and a maximum power efficiency of 3.38 lm/W.     

一种新型锁相环电荷泵的分析与设计

在分析传统电荷泵的一些不理想因素的基础上,提出一种新型的电路结构,以解决电荷泵的电流失配、电荷共享、电荷注入现象。本设计电路结构简单,电流匹配好,输出电压稳定。基于65nm CMOS工艺仿真结果表明:电荷泵充放电电流大小基本相等,环路稳定后输出电压Vc最大起伏为20μV。     

红外焦平面阵列探测器空间采样效应模拟

红外焦平面阵列探测器空间采样效应会对红外图像效果产生影响,为提高仿真红外图像的置信度,在信号注入仿真中需要对采样效应进行模拟。通过深入分析空间采样效应机理,建立了采样效应的数学模型,分析了分辨率的变换过程。利用基于图像像素处理的方法从空域上对红外仿真图像叠加空间采样效应。仿真实验表明,叠加了红外焦平面阵列探测器空间采样效应的红外仿真图像置信度明显提高,可作为重要环节提高红外成像仿真整体的置信度水平。     

双异质结单载流子传输光敏晶体管输出电流

详细对比并分析了双异质结单载流子传输光敏晶体管(Uni-travelling-carrier Double Heterojunction Phototransistor,UTC-DHPT)与单异质结光敏晶体管(Single Heterojunction Phototransistor,SHPT)在大的入射光功率范围下集电极输出电流特性.首先,UTC-DHPT仅选取窄带隙重掺杂的基区作为吸收区,与SHPT选取基区和集电区作为吸收区相比,其光吸收区厚度小,在小功率入射光下UTC-DHPT的输出电流小于SHPT的输出电流.其次,由于UTCDHPT的双异质结结构,光生电子和光生空穴产生于基区,减弱了SHPT因光生空穴在集电结界面积累而产生的空间电荷效应,避免了SHPT在小功率入射光下输出电流开始饱和的问题,从而UTC-DHPT获得了比SHPT更大的准线性工作范围.最后,UTC-DHPT的单载流子(电子)传输方式使得基区产生的光生空穴以介电弛豫的方式到达发射结界面,有效降低了发射结势垒,增加了单位时间内由发射区传输到基区的电子数量,提高了其发射结注入效率,在大功率入射光下UTC-DHPT比SHPT能获得更高的输出电流.     

注入锁定铜蒸气激光器的时空、能量以及偏振特性

采用P分量的偏振光注入到平行平面腔的铜蒸气激光器中,结果表明,与未加注入光时的振荡器比较,注入锁定铜蒸气激光器的输出功率提高了43％,P分量的偏振度从0.30提高到0.78,脉宽由36ns加宽到48ns,输出光的发散角显著改善,由7.8mrad降到1.1mrad,与注入光束基本相同。     

Improved performance of deep-blue polymer light-emitting diodes by one-step coating self-assembly hole injection/transport nanocomposites with both the optical and electrical optimization

In this study we demonstrate an easy solution-processed highly efficient deep-blue polymer light-emitting diode (PLED) via a simple one-step coating of self-assembly hole injection/transport nanocomposites to achieve both a finer hole ohmic contact and an increased light outcoupling, which is the first time report about both the optical and electrical optimization without necessitating changes in the design or structure of the wide bandgap deep-blue PLEDs themselves. The contact angle and surface energy measurement results demonstrate that triazine-based hole injection molecules can vertically migrate towards the bottom PEDOT:PSS layer to obtain a stable minimum of free energy, resulting in an optimal top-to-bottom HOMO energy level arrangement and an improved hole mobility in deep-blue PLEDs. The random surface nanostructure was formed on top of the hole bilayer, leading to the enhancement of light outcoupling verified by transmittance, transmittance haze and light extraction efficiency. Furthermore, in order to explore the reasons of the hole light scattering formation process, a transient drying monitoring technique is applied to track the drying process of the nanostructure films, revealing this approach effectiveness by easily modifying mixing ratios for obtaining different light outcoupling abilities.     

基于直流光注入直调DFB-LD的可调光毫米波信号产生技术

提出了一种基于直流光注入直接调制分布反馈式半导体激光器(DFB-LD)的载波可调的光毫米波生成方案,利用直接调制DFB-LD的输出瞬态波长随驱动电流增大而蓝移的特点,将直流光注入至直调DFB-LD的0码波长附近注入锁定。锁定的直调激光器在1码时输出的蓝移波长与原注入波长相位相干,再通过光电探测器将拍频信号转换为调制的光毫米波信号。实验重点讨论了40GHz光毫米波的产生,同时完成了30、40、50和60GHz光毫米波的可调谐性实验。本文的方案结构简单,无需外调制器和微波本振,载波可调并可产生高至60GHz光毫米波信号,可作为光/无线混合接入中成本节省的光上变频方案。