Single Crystal Perovskite Solar Cells: Development and Perspectives

The efficiency of perovskite solar cells has increased to a certified value of 25.2% in the past 10 years, benefiting from the superior properties of metal halide perovskite materials. Compared with the widely investigated polycrystalline thin films, single crystal perovskites without grain boundaries have better optoelectronic properties, showing great potential for photovoltaics with higher efficiency and stability. Additionally, single crystal perovskite solar cells are a fantastic model system for further investigating the working principles related to the surface and grain boundaries of perovskite materials. Unfortunately, only a handful of groups have participated in the development of single crystal perovskite solar cells; thus, the development of this area lags far behind that of its polycrystalline counterpart. Therefore, a review paper that discusses the recent developments and challenges of single crystal perovskite solar cells is urgently required to provide guidelines for this emerging field. In this progress report, the optical and electrical properties of single crystal and polycrystalline perovskite thin films are compared, followed by the recent developments in the growth of single crystal perovskite thin films and the photovoltaic applications of this material. Finally, the challenges and perspectives of single crystal perovskite solar cells are discussed in detail.     

温度对非晶硅薄膜二次晶化的影响

为研究温度对固相晶化的影响,用玻璃作衬底,在不同温度下用PECVD法直接沉积非晶硅(a-Si:H)薄膜,把在室温、350℃和450℃下沉积的样品,在600℃和850℃下退火3h,把前后样品用拉曼光谱和扫描电镜分析,发现二次晶化后的晶化效果比直接沉积的薄膜好,850℃下退火的薄膜比600℃好。在450℃下沉积、850℃退火3h,SEM观察,表面最大晶粒尺寸为900nm左右。     

Pentacene/n-Si heterojunction diodes and photovoltaic devices investigated by I-V and C-V measurements

The forward and reverse current density-voltage (J-V) and capacitance-voltage (C-V) characteristics of pentacene/n⁻-silicon heterojunction diodes were investigated to clarify the carrier conduction mechanism at the organic/inorganic heterojunction. Current rectification characteristics of the pentacene/n⁻-Si junctions can be explained by a Schottky diode model with an interfacial layer. The diode parameters such as Schottky barrier height and ideality factor were estimated to be 0.79-1.0 eV and 2.4-2.7, respectively. The C-V analysis suggests that the depletion layer appears selectively in the n⁻-Si layer with a thickness of 1.47 μm from the junction with zero bias and the diffusion potential was estimated at 0.30 eV at the open-circuit condition. The present heterojunction allows the photovoltaic operation with power conversion efficiencies up to 0.044% with a simulated solar light exposure of 100 mW/cm².     

颗粒包覆法制备BZT-CT复合陶瓷

采用预合成的方法,分别用得到的单斜类锆钙钛矿相Bi2(Zn1/3Ta2/3)2O7(β-BZT)和钙钛矿相CaTiO3(CT)的粉末作为正负温度系数组元,用sol-gel法制备的ZnO-B2O3-SiO2玻璃,包覆两组元颗粒以阻止其相互反应,从而制备复相零温度系数微波陶瓷。结果表明:预合成及颗粒包覆法可抑制两相固溶反应,有效降低复相陶瓷的烧结温度,调节温度系数。特别是900℃烧结的w(CT)为4%的样品,其εr约为47,αε为2.8×10–6℃–1。     

Controlling of electronic parameters of GaAs Schottky diode by poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol) organic interlayer

The electronic properties of metal-organic semiconductor-inorganic semiconductor structure between GaAs and poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol) organic film have been investigated via current-voltage and capacitance-voltage methods. The Au/PEDOT/n-GaAs contact exhibits a rectification behavior with the barrier height of 0.69 eV and ideality factor value of 3.94. The barrier height of the studied diode (0.67 eV) is lower than that of Ni/n-GaAs/In (0.85 eV) and Au/n-GaAs/In Schottky diodes. The decrease in barrier height of Au/n-GaAs/In Schottky diode is likely to be due to the variation in the space charge region in the GaAs. The obtained results indicate that control of the interfacial potential barrier for metal/n-GaAs diode was achieved using thin interlayer of the poly(3,4-ethylenedioxithiophene)-block-poly(ethylene glycol).     

Ultrafast Responsive Non‐Volatile Flash Photomemory via Spatially Addressable Perovskite/Block Copolymer Composite Film

The exotic photophysical properties of organic–inorganic hybrid perovskite with long exciton lifetimes and small binding energy have appeared as promising front‐runners for next‐generation non‐volatile flash photomemory. However, the long photo‐programming time of photomemory limits its application on light‐fidelity (Li‐Fi), which requires high storage capacity and short programming times. Herein, the spatially addressable perovskite in polystyrene‐block‐poly(ethylene oxide) (PS‐b‐PEO)/perovskite composite film as an photoactive floating gate is demonstrated to elucidate the effect of morphology on the photo‐responsive characteristics of photomemory. The chelation between lead ion and PEO segment promotes the anti‐solvent functionalities of the perovskite/PS‐b‐PEO composite film, thus allowing the solution‐processable poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) to act as the active channel. Through manipulating the interfacial area between perovskite and P3HT, fast photo‐induced charge transfer rate of 0.056 ns^?1, high charge transfer efficiency of 89%, ON/OFF current ratio of 10⁴, and extremely low programming time of 5 ms can be achieved. This solution‐processable and fast photo‐programmable non‐volatile flash photomemory can trigger the practical application on Li‐Fi.     

Creating an Air‐Stable Sulfur‐Doped Black Phosphorus‐TiO2 Composite as High‐Performance Anode Material for Sodium‐Ion Storage

With the increasing demand for low cost, long lifetime, high energy density storage systems, an extensive amount of effort has recently been focused on the development of sodium‐ion batteries (SIBs), and a variety of cathode materials have been discovered. However, looking for the most suitable anode material for practical application is a major challenge for SIBs. Herein, a high capacity sulfur‐doped black phosphorus‐TiO₂ (TiO₂‐BP‐S) anode material for SIBs is first synthesized by a feasible and large‐scale high‐energy ball‐milling approach, and its stability in air exposure is investigated through X‐ray photoelectron spectroscopy. The morphology of TiO₂‐BP‐S is characterized using transmission electron microscopy, indicating that the TiO₂ nanoparticles produce P? Ti bonds with BP. The TiO₂‐BP‐S composite with P? S and P? Ti bonds exhibits excellent stability in air and the superior electrochemical performance. For example, the discharge specific capacity is up to 490 mA h g^?1 after 100 cycles at 50 mA g^?1, and it remains at 290 mA h g^?1 after 600 cycles at 500 mA g^?1. Meanwhile, the scientific insight that the formation of stable P? S and P? Ti bonds can provide a guide for the practical large‐scale application of SIBs in other titanium base and black phosphorus materials is looked forward.     

世界覆铜板新品种新技术赏析（3）——斗山电子无卤无磷DS-7409HG

无卤无磷覆铜板将成为覆铜板绿色化的新阶段,文章介绍了斗山电子的无卤无磷覆铜板DS-7409HG系列型号的特点。     

Formation of Gold and Silver Nanoparticle Arrays and Thin Shells on Mesostructured Silica Nanofibers

Mesostructured silica nanofibers synthesized in high yields with cetyltrimethylammonium bromide as the structure‐directing agent in HBr solutions are used as templates for the assembly of Au and Ag nanoparticles and the formation of thin Au shells along the fiber axis. Presynthesized spherical Au and Ag nanoparticles are adsorbed in varying amounts onto the silica nanofibers through bifunctional linking molecules. Nonspherical Au nanoparticles with sharp tips are synthesized on the nanofibers through a seed‐mediated growth approach. The number density of nonspherical Au nanoparticles is controlled by varying the amount of seeded nanofibers relative to the amount of supplied Au precursor. This seed‐mediated growth is further used to form continuous Au shells around the silica nanofibers. Both the Au‐ and Ag‐nanoparticle/silica‐nanofiber hybrid nanostructures and silica/Au core/shell fibers exhibit extinction spectra that are distinct from the spectra of Au and Ag nanoparticles in solution, indicating the presence of new surface plasmon resonance modes in the silica/Au core/shell fibers and surface plasmon coupling between closely spaced metal nanoparticles assembled on silica nanofibers. Spherical Au‐ and Ag‐nanoparticle/silica‐nanofiber hybrid nanostructures are further used as substrates for surface‐enhanced Raman spectroscopy, and the enhancement factors of the Raman signals obtained on the Ag‐nanoparticle/silica‐nanofiber hybrid nanostructures are 2 × 10⁵ for 4‐mercaptobenzoic acid and 4‐mercaptophenol and 7 × 10⁷ for rhodamine B isothiocyanate. These hybrid nanostructures are therefore potentially useful for ultrasensitive chemical and biological sensing by using molecular vibrational signatures.     

Fully Solution‐Processed Photonic Structures from Inorganic/Organic Molecular Hybrid Materials and Commodity Polymers

Managing the interference effects from thin (multi‐)layers allows for the control of the optical transmittance/reflectance of widely used and technologically significant structures such as antireflection coatings (ARCs) and distributed Bragg reflectors (DBRs). These rely on the destructive/constructive interference between incident, reflected, and transmitted radiation. While known for over a century and having been extremely well investigated, the emergence of printable and large‐area electronics brings a new emphasis: the development of materials capable of transferring well‐established ideas to a solution‐based production. Here, demonstrated is the solution‐fabrication of ARCs and DBRs utilizing alternating layers of commodity plastics and recently developed organic/inorganic hybrid materials comprised of poly(vinyl alcohol) (PVAl), cross‐linked with titanium oxide hydrates. Dip‐coated ARCs exhibit an 88% reduction in reflectance across the visible compared to uncoated glass, and fully solution‐coated DBRs provide a reflection of >99% across a 100 nm spectral band in the visible region. Detailed comparisons with transfermatrix methods (TMM) highlight their excellent optical quality including extremely low optical losses. Beneficially, when exposed to elevated temperatures, the hybrid material can display a notable, reproducible, and irreversible change in refractive index and film thickness while maintaining excellent optical performance allowing postdeposition tuning, e.g., for thermo‐responsive applications, including security features and product‐storage environment monitoring.