Sintering behaviour of La1−xSrxFeO3−δ mixed conductors

The sintering properties of La_1−xSr_xFeO_3−δ (x = 0.1, 0.25) mixed conductors have been investigated with particular emphasis on the effect of secondary phases due to cation non-stoichiometry (±5 mol% La excess and deficiency). Secondary phases, located at grain boundaries in cation non-stoichiometric materials, increased the sintering temperature compared to single-phase materials. Extensive swelling in final stage of sintering was observed in all materials, which resulted in micro-porous materials. The swelling was most pronounced in the phase pure and two-phase materials due to La-deficiency, while refractory secondary phases in La-excess materials inhibited both sintering, grain growth and swelling. In La-deficient materials, formation of molten secondary phases resulted in rapid swelling due to viscous flow. The present findings demonstrated the importance of controlling sintering temperature and time, as well as careful control of the cation stoichiometry of La_1−xSr_xFeO_3−δ in order to achieve fully dense and homogenous La_1−xSr_xFeO_3−δ ceramics.     

一种基于并联机构的航天器姿态模拟装置的设计开发

航天器发射升空前进行地面测试和试验是航天器研制过程中的重要环节。文中针对一种基于并联机构的姿态模拟装置的设计开发,从位置分析、速度分析和虚拟样机的建造和仿真分析等方面对3UPS-PU并联机构进行研究,完成姿态模拟装置的设计,为航天器装配、试验和测试设备的设计提供一种新的思路。     

熟料烧结过程中氧化铁反应行为的热力学分析

通过对Fe2O3与碳酸钠、氧化钙以及硅酸钙反应的热力学分析,明确Fe2O3在铝土矿炉料烧结过程中的热力学反应规律。热力学计算、分析结果表明:Fe2O3在正常烧结温度范围内能与Na2CO3或CaO发生反应,但更易与CaO反应形成2CaO.Fe2O3或CaO.Fe2O3,Fe2O3和Na2O.Fe2O3能使2CaO.SiO2和3CaO.2SiO2转变为CaO.SiO2,CaO.SiO2进一步与Na2O.Al2O3或Na2O.Fe2O3反应生成不溶的三元化合物而造成烧结法生产氧化铝过程中Na2O和Al2O3的损失。4CaO.Al2O3.Fe2O3不能由铁酸钙和铝酸钠相互反应产生,而可能是CaO、Al2O3和Fe2O3三者直接反应的产物,且在烧结条件下Na2O.Fe2O3可分解4CaO.Al2O3.Fe2O3。     

Oxidation behavior of 2.25Cr-1Mo steel with prior tempering at different temperatures

The oxidation behavior of a normalized 2.25Cr-1Mo steel tempered previously for 10 hr at different temperatures between 873 and 1023 K has been studied up to a maximum duration of 1000 hr in air at 773–973 K. The oxidation resistance of the steel was found to decrease significantly with the temperature of tempering. Tempering of this steel is reported to cause microstructural changes involving precipitation of Cr as carbides and a decrease in the effective (free) Cr contents, that could influence the oxidation resistance of the Cr-containing alloys. Relative compositions across the thickness of the oxide scales, as analyzed by SEM/EDX and SIMS, suggest that a less Cr-rich (and less protective) and thicker scale on the steel formed because previous tempering caused extensive depletion of free Cr.     

Defect structure and chemical diffusion in nickel sulfide β-Ni3S2

The chemical composition, defect structure, and diffusion in nickel sulfide -Ni₃S₂ have been investigated in H₂S-H₂ mixtures containing between 1 and 65% H₂S between 560 and 700°C. Gravimetric, density, and X-ray studies were carried out. In the thermodynamically stable compound the ratio of Ni/S varied between 1.3 and 1.75. The X-ray examination showed a step change in the lattice parameter at the Ni/S ratio 1.4. A linear dependence of the density values (between 5.5 and 6.2 g/cm³) on the composition was observed. On the basis of the chemical composition and density measurements the number of nickel and sulfur atoms in 1 cm³ were determined. It has been shown that the Ni₃S₂ phase is defected in both anion and cation sublattices and that its chemical formula may be described as follows: Ni_3±yS_2x, where y 2x. It has been found that in the mixture containing 10% H₂S the process of defect formation is determined by their diffusion in the sulfide. The temperature dependence of the diffusion coefficient is described by the equation D = 13.15 exp(-30,000/RT) cm²/sec. No dependence of D on the sulfur partial pressure was observed, but this may be due to the relatively large uncertainties in the measurement of the diffusion coefficients.     

Preparation and characterization of GaN films grown on Ga-diffused Si （111） substrates

Hexagonal GaN films were prepared by nitriding Ga2O3 films with flowing ammonia. Ga2O3 films were deposited on Ga-diffused Si (111) substrates by radio frequency (r.f.) magnetron sputtering. This paper have investigated the change of structural properties of GaN films nitrided in NH3 atmosphere at the temperatures of 850, 900, and 950℃ for 15 min and nitrided at the temperature of 900℃ for 10, 15, and 20 rain, respectively. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were used to analyze the structure, surface morphology and composition of synthesized samples. The results reveal that the as-grown films are polycrystalline GaN with hexagonal wurtzite structure and GaN films with the highest crystal quality can be obtained when nitrided at 900℃ for 15 min.     

Effect of theθ-α-Al2O3 transformation on the oxidation behavior ofβ-NiAl + Zr

Isothermal oxidation of NiAl + Zr has been performed over the temperature range of 800–1200°C and studied by TGA, XRD, and SEM. A discontinuous decrease in growth rate of two orders of magnitude was observed at 1000° C due to the formation of -Al₂O₃ from -Al₂O₃. This transformation also resulted in a dramatic change in the surface morphology of the scales, as a whisker topography was changed into a weblike network of oxide ridges and radial transformation cracks. It is believed that the ridges are evidence for a shortcircuit outward aluminum diffusion growth mechanism that has been documented in a number of¹⁸O tracer studies.