Performances of carbon nanotube field effect transistors with altered channel length

The influence of channel length on the performances of carbon nanotube field effect transistors(CNT-FETs) has been studied.Buffered oxide etching was used to remove approximately a 60 nm layer from the original 100 nm silicon dioxide layer,to thin the dielectric layer of the back gate.Channel length of the CNT-FETs was changed along with the etching process.The dependence of drain-source current on gate voltage was measured to analyze the performance of the CNT-FETs,including the transconductance,carrier mo...     

ZnO单晶的KOH碱液法生长和表征

采用自发成核方法,以KOH碱液作助熔剂,在银、镍和铁坩埚中分别生长了透明、棕绿色和棕色的纤维锌矿氧化锌单晶。X射线衍射和电感耦合等离子体原子发射光谱分析表明:晶体的颜色与所含的杂质有关,这些杂质来源于所使用的坩埚。采用光致发光(photoluminescence,PL)光谱对所生长的晶体进行了表征,结果显示,从银坩埚中生长的氧化锌晶体质量较高,其室温下用325nm波长光激发的PL光谱显示381nm强的紫外发射峰。在此基础上,从200mL银坩埚中生长出了尺寸为φ3mm×34mm氧化锌晶体。     

Stretchable,Transparent Zinc Oxide Thin Film Transistors

Stretchable and transparent thin film transistors (TFTs) with intrisically brittle oxide semiconductors are built using a wavy structural configuration that can provide high flexibility and stretchability. After device fabrication procedures including high temperature annealing, the oxide semiconductor‐based TFT arrays can be transferred directly to plastic or rubber substrates, without an additional device process, using transfer printing methods. This procedure can avoid some of the thermal degradation problems associated with plastic or rubber substrates by separating them from the annealing procedure needed to improve the device performance. These design and fabrication methods offer the possibility of developing a new format of stretchable electronics.     

Gadolinia-modified ceria photocatalyst for removal of lead (II) ions from aqueous solutions

Gd₂O₃-modified CeO₂ particles are prepared by a solid-state reaction method, and are used to remove Pb(II) ions from aqueous solutions by a photoelectrodeposition. The UV–photocatalytic activity for Pb(II) ion removal of the Gd₂O₃-modified CeO₂ is significantly higher than that of pure CeO₂. A solid solution Gd_0.1Ce_0.9O_1.95 phase coexisting with the CeO₂ matrix phase shows a high ability of photoelectrodeposition for the Pb(II) ions removal, compared to the two-phases mixture of Gd₂O₃–CeO₂. The high photocatalytic activity is also supported by a strong photoluminescence (PL) signal from the Gd_0.1Ce_0.9O_1.95–CeO₂. The high activity can be due to a formation of heterojunctions between p-type Gd_0.1Ce_0.9O_1.95 and n-type CeO₂, promoting transfer of photogenerated electron–hole pairs and efficiency restraining recombination of the charges.     

Large-area,high-quality self-assembly electron transport layer for organic optoelectronic devices

We propose a self-assembly method for forming large-area high-quality solution-processed titanium oxide (TiO₂) films as efficient electron transport layer for organic solar cells. The self-assembled solution-processed TiO₂ layers are highly ordered and significantly improved in surface morphology over commonly-used spin-coating process resulting in better charge collection and significant material saving. When incorporated into polymer solar cells, the TiO₂ device shows enhanced performance. Furthermore, we demonstrate the TiO₂ can form large-area films, and achieve very uniform and improved device performances. Consequently, the self-assembled TiO₂ films can be efficient and low-cost electron transport layer potentially for large-area organic optoelectronics.     

Enhanced storage/operation stability of small molecule organic photovoltaics using graphene oxide interfacial layer

Graphene and graphene oxide (GO) have been applied in flexible organic electronic devices with enhanced efficiency of polymeric photovoltaic (OPV) devices. In this work, we demonstrate that storage/operation stability of OPV can be substantially enhanced by spin-coating a GO buffer layer on ITO without any further treatment. With a 2 nm GO buffer layer, the power conversion efficiency (PCE) of a standard copper phthalocyanine (CuPc)/fullerene (C₆₀) based OPV device shows about 30% enhancement from 1.5% to 1.9%. More importantly, while the PCE of the standard device drop to 1/1000 of its original value after 60-days of operation-storage cycles; those of GO-buffered device maintained 84% of initial PCE even after 132-days. Atomic force microscopy studies show that CuPc forms larger crystallites on the GO-buffered ITO substrate leading to better optical absorption and thus photon utilization. Stability enhancement is attributed to the diffusion barrier of the GO layer which slow down diffusion of oxygen species from ITO to the active layers.     

Effects of temperature and pressure in oxynitridation kinetics on Si(100) with N2O gas

We have investigated oxynitridation of Si(100) surfaces with nitrous oxide (N₂O) gas in a wide range of substrate temperatures (600–1000 °C) and N₂O pressures (10⁻²–10² Pa). The growth rate and atomic composition of the oxynitride layer have been measured by in situ x-ray photoelectron spectroscopy. The surface morphology of the oxynitride layer has been also observed by scanning electron microscopy. The results show that in higher N₂O pressure (>1 Pa) regime, the nitridation reaction is suppressed by the oxide layer, which quickly forms on the surface. On the other hand, in lower pressure (<1 Pa) and higher substrate temperature (>900 °C) regime, the nitridation reaction strongly occurs because of the active oxidation (etching reaction), which causes the surface roughness. It is found by argon-ion-sputtering measurements that the nitride layer locally exists only near the surface at the reduced N₂O pressure. We discuss qualitatively the oxynitridation kinetics and the effective condition for growing the oxynitride layer.     

Heterostructured dysprosium vanadate – ZnO for photo-electrocatalytic and self-cleaning applications

In this article, we report fabrication of 5 wt% of Dy as DyVO₄ supported ZnO by template-free hydrothermal-thermal decomposition method and its photocatalytic activity towards degradation of azo dyes Rhodamine-B (Rh-B) and Trypan Blue (TB) in solar light, Electrocatalytic activity in methanol oxidation and Self-cleaning properties. The as prepared DyVO₄-ZnO was characterized by surface analytical and spectroscopic techniques. The results suggested that Dysprosium vanadate doping on ZnO has increased its photocatalytic efficiency with high reusability. DyVO₄-ZnO exhibits higher electrocatalytic activity than prepared ZnO for methanol electrooxidation in alkaline medium, revealing its promising potential as the anode in direct methanol fuel cells. Hydrophobicity of ZnO increases by doping of DyVO_4.     

Improvement in open circuit voltage of n‐ZnO/p‐Si solar cell by using amorphous‐ZnO at the interface

Several research groups are currently working on n‐ZnO/p‐Si heterojunction solar cell, and recently, Pietruszka et al [Sol. Energ. Mat. Sol. Cells 147 (2016) 164‐170] has reported the highest efficiency of 7.1% for this structure. The main challenge is to enhance the open circuit voltage up to theoretically predicted value of >0.6 V. This paper reports >20% improvement in open circuit voltage of n‐ZnO/p‐Si solar cell by depositing amorphous‐ZnO at the interface at room temperature that possibly improves the passivation and/or avoids oxide formation at the interface during ZnO deposition. Two other materials, aluminum nitride and amorphous‐Si, have also been used as buffer layers to evaluate their effect on suppression of interface states. Furthermore, additional advantage of ZnO as an antireflector has been experimentally verified for different thicknesses of ZnO film.     

Thermal stability of devices with molybdenum oxide doped organic semiconductors

We demonstrate the thermal stability of transition-metal-oxide (molybdenum oxide; MoO₃)-doped organic semiconductors. Impedance spectroscopy analysis indicated that thermal deformation of the intrinsic 1,4-bis[N-(1-naphthyl)-N′-phenylamino]-4,4′-diamine (NPB) layer is facilitated when the MoO₃-doped NPB layer is deposited on the intrinsic NPB layer. The resistance of the intrinsic NPB layer is reduced from 300 kΩ to 3 kΩ after thermal annealing at 100 °C for 30 min. Temperature-dependent conductance/angular frequency–frequency (G/w-f-T) analysis revealed that the doping efficiency of MoO₃, which is represented by the activation energy (E_a), is reduced after the annealing process.