Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

超细Fe3O4粒子表面包覆酞菁钴性质研究

本文研究了合成载氧体的金属有机化学液相淀积法制造工艺，所得产物经ＴＥＭ、ＸＰＳ、Ｍｏｓｓ－ｂａｕｅｒ谱和Ｂ－Ｈ仪等手段，研究了它的结构和磁性能。实验表明，酞青钴以薄层形式包覆在Ｆｅ＿３Ｏ＿４的表面，封闭了Ｆｅ＿３Ｏ＿４的表面孔洞，稳定了Ｆｅ＿３Ｏ＿４的物相，增强了磁性能。     

光纤0_2/CO_2复合传感器的研制

本文报导一种新型的光纤氧、二氧化碳复合传感器.通过在同一敏感膜载体上固定两种不同的荧光试剂——芘丁酸及羟基芘三磺酸,制作了一种对氧和二氧化碳敏感的复合敏感膜.该传感器在医学临床检验范围内具有良好的线性,其测氧的分辩率是0.1％,测二氧化碳的分辩率是0.5％,响应时间短于1min.文中还讨论了三种敏感膜载体的比较及复合传感器测量进程中氧和二氧化碳的相互干扰问题.     

Dynamics and biogeochemical significance of the physical environment in Lake Biwa

We have examined two aspects of the dynamics and biogeochemical significance of the physical environment in Lake Biwa. One is the horizontal distribution of cyanobacteria as it relates to the ‘first gyre’ in the north basin of Lake Biwa. We could easily measure the first gyre using a vessel‐mounted acoustic doppler currents profiler. We were able to quantify the dynamics of the horizontal and vertical structure of currents and water temperature of this gyre. The first gyre did not remain at a fixed position; it moved north and south according to the growth of the gyre. This may play a role in the redistribution of cyanobacteria from place to place in the north basin. The second important environmental dynamic we measured was oxygen consumption rates from 1994 to 2000. We found that the minimum oxygen concentration in the hypolimnion has a clear inverse relationship with the apparent oxygen consumption rates in the 80–85 m depth layer. As a reduction in oxygen concentration in the hypolimnion can have a serious impact on benthic organisms, we concluded that the Lake Biwa environment should be monitored carefully and systematically.     

Electrical and growth characteristics of Au/Al0.15Ga0.85N:Si structures with various Si incorporations

We have investigated the growth characteristics of n-Al_0.15Ga_0.85N:Si/GaN and the electronic properties of Au/n-Al_0.15Ga_0.85N:Si diode structures grown by metal-organic chemical vapor deposition (MOCVD) with various Si incorporations. The Al_0.15Ga_0.85N:Si layers were grown on undoped GaN/sapphire (0001) epitaxial layers in a horizontal MOCVD reactor at the reduced pressure of 300 torr. The mirrorlike surface, free of defects, such as cracks or hillocks, can be seen in the undoped Al_0.15Ga_0.85N epilayer, which was grown without any intentional flow of SiH₄. However, many cracks are observed in the n-Al_0.15Ga_0.85N:Si, which was grown with Si incorporation above 1.0 nmol/min. While Au/n-Al_0.15Ga_0.85N:Si diodes having low incorporation of Si showed retively good rectifying behavior, the samples having high Si incorporation exhibited leaky current-voltage (I-V) behavior. Particularly, the Au/n-Al_0.15Ga_0.85N:Si structure grown with Si incorporation above 1.0 nmol/min cannot be used for electrical rectification. Both added tunneling components and thermionic emission influence the current transport at the Au/n-Al_0.15Ga_0.85N:Si barrier when Si incorporation becomes higher.     

连续生产型炉窑排烟温度合理性探讨

推导了热效率变化百分率和单产标准煤耗变化百分率的计算公式 ,通过计算说明了连续生产型炉窑依靠高效余热回收而实施高烟温生产操作 ,实际上是增加而不是减少燃料消耗 ,据此 ,指出“三高一低”理论的不完全正确和HTAC技术在此类炉窑上的不可用性。论述了连续生产型炉窑低烟温的合理性 ,并提出基于低烟温的“双高低”理论和“烟混型高温低氧燃烧法” ,促使连续生产型炉窑向高效节能环保方向发展     

Doped silicon and NIS junctions for bolometer applications

We discuss the performance, of a normal metal hot electron bolometer (NHEB) that we have measured at 0.3 K. We found that the noise equivalent power was limited by the amplifier noise. To improve the NHEB power response and to make it more robust and reliable we propose to substitute the normal metal with heavily doped silicon. The heavily doped silicon behaves like a metal with lower carrier concentration and has a smaller electron–phonon thermal coupling. We have fabricated superconductor-doped silicon-superconductor contacts (S-Sm-S) and we have used them as thermometers and coolers.     

过氧化甲乙酮合成研究

论述了过氧化甲乙酮的合成方法，用阳离子交换树脂催化剂代替传统的无机酸催化剂。考察了离子交换树脂用量、反应温度对反应产率、活性氧含量的影响及溶剂对产品稳定性的影响。