碰撞等离子体的高阶FDTD算法

给出了电磁波在均匀、碰撞等离子体中传播的四阶时间和四阶空间FDTD算法.该算法比Yee氏FDTD算法每一个网格每一维增加一个存储单元,与常规的二阶等离子体FDTD算法相同.由于采用四阶时间和四阶空间近似,因此该算法能有效地减小数字色散误差,其频带宽度比二阶算法的频带宽度更宽.为了验证该高阶算法的正确性,对均匀、碰撞等离子体平板的电磁波反射系数进行了计算,并与解析结果、二阶FDTD计算结果进行了比较,证明了该算法的高效和精确.     

激光重熔对等离子喷涂热障涂层冲蚀行为影响

研究了等离子喷涂和激光重熔ZrO<,2>-7%Y<,2>O<,3>热障涂层的微观结构,同时考察了两种涂层的抗冲蚀性能,并探讨了其冲蚀破坏机理.试验发现,等离子喷涂热障陶瓷涂层呈典型的层状堆积特征;经过激光重熔处理后,涂层表面形成了沿热流方向生长的柱状品重熔区;相对于等离子喷涂试样,激光重熔涂层有较好的抗冲蚀性能;不管等...     

电热消融毛细管几何参数放电实验研究

在电热化学 (ETC)发射系统中 ,作为等离子发生器的工作元件 ,毛细管的几何参数是影响系统电热转换效率 ,以及等离子体与膛内工质作用效果的主要因素之一 .本文通过在高、低两种电能水平以及不同管径下 ,对多种长度的消融毛细管作发生器放电实验 ,详细分析了在不同电能水平下 ,负载稳态阻抗、峰值电流、负载效率等主要放电特征参量随毛细管几何参数的变化规律     

低气压下制备金刚石薄膜的研究

利用我们自己研制的磁约束直流等离子体设备，在低气压（＜１Ｔｏｒｒ）下。用Ａｒ＋Ｈ２＋ＣＨ４的混合气体在基片上进行了沉积金刚石薄膜的工艺研究。利用扫描电镜和拉曼光谱对不同的进气方式所制备出的金刚石薄膜的形貌和质量进行了比较。结果表明。当在基片表面附近引入碳源气体和大约５０％氢气时，可以大大提高薄膜质量。     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

Plasma chemistries for dry etching of NiFe and NiFeCo

Plasma chemistries based on chlorine, bromine, or iodine have been investigated for inductively coupled plasma etching of NiFe and NiFeCo. There is clear evidence of a chemically enhanced etch mechanism with both Cl₂- and I₂- based mixtures, with no enhancement present for Br₂ chemistries. Etch yields are typically low (≤0.25), emphasizing the need for high ion fluxes in order to achieve practical material removal rates.     

Transient plasma shielding effects during pulsed laser ablation of materials

The absorption of laser energy by the plasma during pulsed laser deposition of thin films has been analyzed theoretically. The amount of laser energy absorbed in the plasma termed as the “plasma shielding factor” is a function of the incident laser wavelength, and time dependent plasma dimensions and electron density. Due to time varying parameters, a quantitative analysis of the plasma absorption is difficult. A model which takes into account the absorption of laser energy by the plasma has been developed. In this model, the time-dependent plasma dimension is replaced by the time dependent ablation depth. Using simulated absorption coefficient values, the ablation characteristics of silicon and high T_c superconductors are computed and compared with experimental results. The plasma shielding factor was found to vary approximately linearly with absorbed laser energy. The calculations also showed that the plasma shielding was strongly dependent on the laser fluence but varies very weakly with the simulated plasma absorption coefficient values. Experimental results on plume shielding showed good agreement with the calculations.     

Analysis of the infrared transmission data of hydrogenated amorphous silicon film fabricated by high rate PECVD

The optical properties of hydrogenated amorphous silicon thin films prepared by a new thermocatalytic plasma enhanced chemical vapor deposition (PECVD) method are here reported for the first time. The transmission spectrum of the film, deposited at a rate of 1.5 nm/s, was measured between 500 and 1100 nm. The envelopes of the transmission spectrum interference maxima and minima were analyzed to reveal the absorption coefficient α(λ@#@), the refractive indexn(λ), the average thickness of the film (791 nm) and the variation of the thickness (11.4 nm), using an analysis which takes into account film inhomogeneity. The modified Newton's method of numerical analysis was used to obtain the optical parameters. The optical band gap ε₀} was determined to be 1.69 eV from the absorption coefficient spectrum, commensurate with values quoted for lower deposition rate PECVD films. The value for ε₀}, the small variation of the film thickness, and a value for the defect density of 3.7 x 10¹⁵}cm^-3} determined for similar material in other work indicate that the thermocatalytic PECVD method can produce acceptable quality films at a high deposition rate.     

MBE growth and properties of ZnO on sapphire and SiC substrates

Molecular beam epitaxy (MBE) of ZnO on both sapphire and SiC substrates has been demonstrated. ZnO was used as a buffer layer for the epitaxial growth of GaN. ZnO is a würtzite crystal with a close lattice match (<2% mismatch) to GaN, an energy gap of 3.3 eV at room temperature, a low predicted conduction band offset to both GaN and SiC, and high electron conductivity. ZnO is relatively soft compared to the nitride semiconductors and is expected to act as a compliant buffer layer. Inductively coupled radio frequency plasma sources were used to generate active beams of nitrogen and oxygen for MBE growth. Characterization of the oxygen plasma by optical emission spectroscopy clearly indicated significant dissociation of O₂ into atomic oxygen. Reflected high energy electron diffraction (RHEED) of the ZnO growth surface showed a two-dimensional growth. ZnO layers had n-type carrier concentration of 9 × 10¹⁸ cm⁻³ with an electron mobility of 260 cm²/V-s. Initial I-V measurements displayed ohmic behavior across the SiC/ZnO and the ZnO/GaN heterointerfaces. RHEED of GaN growth by MBE on the ZnO buffer layers also exhibited a two-dimensional growth. We have demonstrated the viability of using ZnO as a buffer layer for the MBE growth of GaN.     

Two-temperature chemically-non-equilibrium modeling of argon induction plasmas with diatomic gas

A non-equilibrium modeling of argon–oxygen and argon–hydrogen induction thermal plasmas was performed without thermal and chemical equilibrium assumptions. Reaction rates of dissociation and recombination of diatomic gas and ionization were taken into account with two-temperature modeling. A substantial deviation from LTE exists near the torch wall in argon–oxygen induction plasmas under atmospheric pressure, while small deviation in argon–hydrogen plasmas results from the large collision frequency between electrons and hydrogen atoms.