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91.
利用碱辅助水热法实现了Ti-O基纳米管、纳米带和纳米结构微球的合成,通过TEM、SEM等手段对所制备的纳米结构进行表征。当采用商品级锐钛矿TiO2为原料,热水处理温度为180℃、碱的浓度为10mol/L,热处理48h时可以得到Ti-O基纳米带。纳米带宽度为50~200nm,长度达到几十微米甚至一百多微米;产物产率高,质量好,结晶良好,表面洁净,无缺陷。当热处理温度为120℃时,可以得到Ti-O基纳米管,纳米管的长度为200~500nm,外径在20~50nm之间。当所用前驱体的粒径较小时,容易形成较细或者较窄的纳米带或者纳米线,当在选用前驱体的粒径较大时,可以生成纳米结构微球。 相似文献
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93.
胡成武 《湖南工业大学学报》1998,(1)
为保证电镀塑料制品的质量,提出了符合电镀要求的塑料制品设计原则,并且指出在注塑成形时,对塑料经过充分干燥,采用较高的注塑温度,较低的注射压力和较慢的注射速度,是使镀层获得良好结合强度的先决条件。 相似文献
94.
Jung Hyeon Bae Gun Hee Kim Woong Hee Jeong Hyun Jae Kim 《Journal of the Society for Information Display》2011,19(5):404-409
Abstract— Non‐volatile memory effects of an all‐solution‐processed oxide thin‐film transistor (TFT) with ZnO nanoparticles (NPs) as the charge‐trapping layer are reported. The device was fabricated by using a soluble MgInZnO active channel on a ZrHfOx gate dielectric. ZnO NPs were used as the charge‐trapping site at the gate‐insulator—channel interface, and Al was used for source and drain electrodes. Transfer characteristics of the device showed a large clockwise hysteresis, which can be used to demonstrate its memory function due to electron trapping in the ZnO NP charge‐trapping layer. This memory effect has the potential to be utilized as a memory application on displays and disposable electronics. 相似文献
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A stochastic differential equation involving both a Wiener process and fractional Brownian motion, with nonhomogeneous coefficients and random initial condition, is considered. The coefficients and initial condition depend on a parameter. The assumptions on the coefficients and the initial condition supplying continuous dependence of the solution on a parameter, with respect to the Besov space norm, are established. 相似文献
98.
A. BounouhAuthor Vitae H. CamonD. BélièresAuthor Vitae F. Blard F. ZiadéAuthor Vitae 《Computer Standards & Interfaces》2011,33(2):159-164
This work explores MEMS (Micro-Electro-Mechanical Systems) potentialities to fabricate AC voltage references through mechanical-electrical transduction that could be used for high precision electrical metrology and for applications in miniaturized instrumentation. AC voltage reference ranging from 5 V to 90 V have been designed and fabricated using the same Epitaxial Silicon On Insulator (SOI) surface micromachining process allowing an accurate control of both dimensions and material properties. The measured MEMS AC voltage reference values have been found in a good agreement with CoventorWare calculations. These tests structures have also been used to develop the read-out electronics to drive the MEMS. 相似文献
99.
In this paper, a cold standby repairable system consisting of two dissimilar components and one repairman is studied. When failures occur, the repair of both component 1 and component 2 are not ‘as good as new’. The consecutive operating times of component 1 after repair constitute a decreasing geometric process, while the repair times of component 1 are independent and identically distributed. For component 2, its failure is rectified by minimal repair, and the repair time is negligible. Component 1 has priority in use when both components are good. The replacement policy N is based on the failure number of component 1. Under policy N, we derive the explicit expression of the long-run average cost rate C(N) as well as the average number of repairs of component 2 before the system replaced. The optimal replacement policy N*, which minimises the long-run average cost rate C(N), is obtained theoretically. If the failure rate r(t) of component 2 is increasing, the existence and uniqueness of the optimal policy N* is also proved. Finally, a numerical example is given to validate the developed theoretical model. Some sensitivity analyses are provided to show the influence of some parameters, such as the costs for replacement and repair, and the parameters of the lifetime and repair time distributions of both components, to the optimal replacement policy N* and corresponding average cost rate C(N*). 相似文献
100.