Highly reliable hybrid nano-stratified moisture barrier for encapsulating flexible OLEDs

Herein, a novel thin-film encapsulation for flexible organic light-emitting diodes (FOLEDs) is proposed, and its long-term reliability in tensile stress conditions was tested. The hybrid nano-stratified moisture barrier consists of 2.5 dyads of an Al₂O₃/ZnO nano-stratified structure and a S-H nanocomposite organic layer. The nano-stratified structure is prepared by low-temperature atomic layer deposition and the S-H nanocomposite by spin-coating at a thickness of 30 and 120 nm, respectively. An optical transmittance of 89.05% was measured with the 2.5-dyad hybrid nano-stratified moisture barrier with a total thickness of 330 nm. A low water vapor transmission rate (WVTR) of 1.91 × 10⁻⁵ g/m²day was recorded based on an electrical Ca test at 30 °C and 90% R.H. without losing its properties after a bending test. With this highly reliable hybrid nano-stratified moisture barrier, FOLEDs were successfully encapsulated. After 30 days under conditions of 30 °C and 90% R.H. with tensile stress, the J-V-L performances of the FOLEDs were comparable to those of the initial state without dark spots. These results suggest that this hybrid nano-stratified moisture barrier is an excellent method for encapsulating FOLEDs.     

Optimization of ohmic contacts for reliable heterostructure GaAs materials

We studied silver barrier ohmic (Ni/AuGe/Ag/Au) contacts to the GaAs based HEMT structures and observed strong dependence of the cleaning procedures on the ohmic con-tact resistance (R_c), its stability and reliability. The chemical profiles of the metal con-tacts before and after alloying were measured by SIMS. Samples cleaned with the com-bined plasma O₂ and NH₄OH process exhibited excellent results:R _c ∼ 0.1–0.12 ohm-mm when alloyed in the temperature range of 440–540° C and remained stable when subjected to a 200° C and 600mA/mm stress condition for 1000 hr.     

Developing a conductive oxygen barrier for ferroelectric integration

For high-density FeRAM memories, the 1T–1C architecture has been proposed. In this scheme, the ferrocapacitor (FeCAP), a metal\ferroelectric film\metal-like sandwich, is placed directly on top of polysilicon or tungsten plugs contacted to the underlying CMOS technology. Our ferroelectric material of choice, SrBi₂Ta₂O₉ (SBT), requires crystallization anneals ranging from 650 to 800 °C in full oxygen. The bottom electrode (BE) needs to be conductive, as well as an oxygen barrier to protect the underlying plug from oxidation. We have developed a BE stack combination consisting of Pt/IrO₂/Ir/Ti(Al)N. Each layer plays a critical role in the performance of the barrier. Issues such as thermal expansion, stress relaxation, grain growth, and oxidation can be critical in order to have a working bottom electrode. For capacitor formation, the complete stack is etched and covered by SBT. Since all layers are in contact with SBT, it is important to understand how the ferroelectric interacts with both the individual layers and the combined structure. In this paper, we will present our understanding of the chemical reactivity between SBT and the BE stack, which has been successfully engineered to prevent oxidation of the underlying plug.     

Unterminated 4H-SiC Schottky barrier diodes with novel HfNxBy electrodes

4H-SiC Schottky barrier diodes (SBDs) were fabricated and characterized from room temperature to 573 K using HfN_xB_y as Schottky electrodes. The results are compared to SBDs fabricated using other electrodes that include Ni, Pt, Ti and Au. The Schottky barrier height Φ_b for as-deposited HfN_xB_y/n−/n+ diodes, determined from room temperature current-voltage characteristics, is 0.887 eV. This is lower than those of SBDs fabricated using other metals such as Au, where Φ_b is 1.79 eV. The HfN_xB_y/n−/n+ diodes studied have a much higher on-resistance R_on of around 38.24 mΩ-cm², which is about four times that of Au/n−/n+ diodes, due to the higher sheet resistance of the sputtered HfN_xB_y electrode layer. The barrier height Φ_b and ideality factor η of the HfN_xB_y/n−/n+ diodes remain almost unchanged after 400 and 750 °C anneal in N₂. This suggests excellent thermal and chemical stability of HfN_xB_y in contact with 4H-SiC.     

TiN and TaN diffusion barriers in copper interconnect technology: Towards a consistent testing methodology

The present status of work on diffussion barriers for copper in multilevel interconnects is surveyed briefly, with particular emphasis on TiN and TaN, and silicon dioxide as the interlayer dielectric. New results are presented for these materials, combining thermal annealing and bias temperature stress testing. With both stress methods, various testing conditions are compared using capacitance-vs-voltage (C-V) and leakage current-vs-voltage (I-V) measurements to characterize the stressed samples. From an evaluation of these data and a comparison with other testing approaches, conditions for a consistent testing methodology of barrier reliability are outlined.     

Amorphous Ta-nanocrystalline RuOx diffusion barrier for lower electrode of high density memory devices

The effects of the amount of RuO₂ added in the Ta film on the electrical properties of a Ta-RuO₂ diffusion barrier were investigated using n⁺⁺-poly-Si substrate at a temperature range of 650–800°C. For the Ta layer prepared without RuO₂ addition, Ta₂O₅ phase formed after annealing at 650°C by reaction between Ta and external oxygen, leading to a higher total resistance and a non-linear I-V curve. Meanwhile, in the case of the Ta film being deposited with RuO₂ incorporation, not only a lower total resistance and ohmic characteristics exhibited, but also the bottom electrode structure was retained up to 800°C, attributing to the formation of a conductive RuO₂ crystalline phase in the barrier film by reaction with the indiffused oxygen because of a Ta amorphous structure formed by chemially strong Ta-O or Ta-Ru-O bonds and a large amount of conductive RuO₂ added. Since a kinetic barrier for nucleation in formation of the crystalline Ta₂O₅ phase from an amorphous Ta(O) phase is much higher than that of crystalline RuO₂ phase from nanocrystalline RuO_x phase, the formation of the RuO₂ phase by reaction between the indiffused oxygen and the RuO_x nanocrystallites is kinetically more favorable than that of Ta₂O₅ phase.     

Latch Applicator for Efficient Delivery of Dissolving Microneedles Based on Rapid Release of Elastic Strain Energy by Thumb Force (Adv. Funct. Mater. 11/2023)

Dissolving microneedle (DMN) is an attractive alternative to parenteral and enteral drug administration owing to its painless self-administration and safety due to non-generation of medical waste. For reproducible and efficient DMN administration, various DMN application methods, such as weights, springs, and electromagnetic devices, have been studied. However, these applicators have complex structures that are complicated to use and high production costs. In this study, a latch applicator that consists of only simple plastic parts and operates via thumb force without any external complex device is developed. Protrusion-shaped latches and impact distances are designed to accumulate thumb force energy through elastic deformation and to control impact velocity. The optimized latch applicator with a pressing force of 25 N and an impact velocity of 5.9 m s⁻¹ fully inserts the drug-loaded tip of the two-layered DMN into the skin. In an ovalbumin immunization test, DMN with the latch applicator shows a significantly higher IgG antibody production rate than that of intramuscular injection. The latch applicator, which provides effective DMN insertion and a competitive price compared with conventional syringes, has great potential to improve delivery of drugs, including vaccines.     

The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

The influence of high energy electron (HEE) irradiation from a Sr-90 radio-nuclide on n-type Ni/4H–SiC samples of doping density 7.1×10¹⁵ cm⁻³ has been investigated over the temperature range 40–300 K. Current–voltage (I–V), capacitance–voltage (C–V) and deep level transient spectroscopy (DLTS) were used to characterize the devices before and after irradiation at a fluence of 6×10¹⁴ electrons-cm⁻². For both devices, the I–V characteristics were well described by thermionic emission (TE) in the temperature range 120–300 K, but deviated from TE theory at temperature below 120 K. The current flowing through the interface at a bias of 2.0 V from pure thermionic emission to thermionic field emission within the depletion region with the free carrier concentrations of the devices decreased from 7.8×10¹⁵ to 6.8×10¹⁵ cm⁻³ after HEE irradiation. The modified Richardson constants were determined from the Gaussian distribution of the barrier height across the contact and found to be 133 and 163 A cm⁻² K⁻² for as-deposited and irradiated diodes, respectively. Three new defects with energies 0.22, 0.40 and 0.71 eV appeared after HEE irradiation. Richardson constants were significantly less than the theoretical value which was ascribed to a small active device area.     

Si基有机异质结势垒特性的研究

在电阻率为０．２Ω．ｃｍ的ｐ－Ｓｉ衬底上沉积了厚度为２０ｎｍ的有机半导体材料四甲酸二酐（ＰＴＣＤＡ）薄膜,由此形成有机／无机异质结。从它们的能带结构出发,通过实验测试分析了这种有机／无机半导体异质结（ＯＩＨＪ）的电容－电压及电流－电压特性。     

Smart Skin-Adhesive Patches: From Design to Biomedical Applications

With the advancement of medical and digital technologies, smart skin adhesive patches have emerged as a key player for complex medical purposes. In particular, skin adhesive patches with integrated electronics have created an excellent platform for monitoring health conditions and intelligent medication. However, the efficient design of the adhesive patches is still challenging as it requires a strong combination of network structure, adhesion, physical properties, and biocompatibility. To design an assimilated device, one must have a deep knowledge of various skin adhesive patches. This article provides a comprehensive review of the recent advances in skin-adhesive patches, including hydrogel-based adhesive patches, transdermal patches, and electronic skin (E-skin) patches, for various biomedical applications such as wound healing, drug delivery, biosensing, and health monitoring. Furthermore, the key challenges, implementable strategies, and future designs that can potentially provide researchers in designing innovative multipurpose smart skin patches are discussed. These advanced approaches are promising for managing the health and fitness of patients who require regular medical care.