Alkaline barrier slurry applied in TSV chemical mechanical planarization

We have proposed a TSV （through-silicon-via） alkaline barrier slurry without any inhibitors for barrier CMP （chemical mechanical planarization） and investigated its CMP performance. The characteristics of removal rate and selectivity of Ti/SiO2/Cu were investigated under the same process conditions. The results obtained from 6.2 mm copper, titanium and silica show that copper has a low removal rate during barrier CMP by using this slurry, and Ti and SiO2 have high removal rate selectivity to Cu. Thus it may be helpful to modify the dishing. The TSV wafer results reveal that the alkaline barrier slurry has an obvious effect on surface topography correction, and can be applied in TSV barrier CME     

Improved Ni Schottky Contacts on <Emphasis Type="Italic">n</Emphasis>-Type 4H-SiC Using Thermal Processing

High-temperature processing was used to improve the barrier properties of three sets of n-type 4H-SiC Schottky diodes fabricated with Ni Schottky contacts. We obtained an optimum average barrier height of 1.78 eV and an ideality factor of 1.09 using current–voltage measurements on diodes annealed in vacuum at 500°C for 24 h. Nonannealed contacts had an average barrier height of 1.48 eV and an ideality factor of 1.85. The Rutherford backscattering spectra of the Ni/SiC contacts revealed the formation of a nickel silicide at the interface, accompanied by a substantial reduction in oxygen following annealing.     

半导体器件欧姆接触中的扩散阻挡层

为提高半导体器件欧姆接触的可靠性，一般要在金属化系统中加扩散阻挡层。本文介绍了扩散阻挡层的种类及其特性，并进行了比较和讨论。最后给出了在实际成功应用的例子。     

基于非对称掺杂策略的GNRFET电学特性研究

基于量子力学非平衡Green函数理论框架,在开放边界条件下,通过自洽求解三维Poisson和Schrodinger方程,构建了适用于非均匀掺杂的石墨烯场效应管的输运模型.并利用该模型分析计算采用非对称HALO-LDD掺杂策略的石墨烯纳米条带场效应管（GNRFET）的电学特性.通过与采用其他掺杂策略的GNRFET的输出特性、转移特性、开关电流比、亚阈值摆幅、阈值电压漂移等电学特性对比分析,发现这种掺杂结构的石墨烯场效应管具有更大的开关电流比、更低的泄漏电流、更小的亚阈值摆幅和阈值电压漂移,表明采用非对称HALO-LDD掺杂策略的GNRFET具有更好的栅控能力,能够有效的抑制短沟道效应和热载流子效应.     

双极型静电感应晶体管开关时间的测量与分析

从理论和实验两方面对静电感应晶体管（ＢＳＩＴ）的开关时间进行了分析和测量，提出了简单的分析方法，将影响ＢＳＩＴ开关时间的各个因素归结为结构因子和材料因子，从而简化了分析影响ＢＳＩＴ开关时间的因素，对于ＢＳＩＴ的实际工艺，结构设计有指导意义。     

高压 Ti/ 6H- SiC肖特基势垒二极管

在 N型 6 H - Si C外延片上 ,通过热蒸发 ,制作 Ti/ 6 H- Si C肖特基势垒二极管 (SBD) .通过化学气相淀积 ,进行同质外延生长 ,详细测量并分析了肖特基二极管的电学特性 ,该肖特基二极管具有较好的整流特性 .反向击穿电压约为 40 0 V,室温下 ,反向电压 VR=2 0 0 V时 ,反向漏电流 JR 低于 1e- 4 A / cm2 .采用 Ne离子注入形成非晶层 ,作为边缘终端 ,二极管的击穿电压增加到约为 80 0 V.     

Barrier height and ideality factor dependency on identically produced small Au/p-Si Schottky barrier diodes

Small high-quality Au/P-Si Schottky barrier diodes (SBDs) with extremely low reverse leakage current using wet lithography were produced. Their effective barrier heights (BHs) and ideality factors from current–voltage (I-V) characteristics were measured by a conducting probe atomic force microscope (C-AFM). In spite of identical preparation of the diodes there was a diode-to-diode variation in ideality factor and barrier height Parameters. By extrapolating of the plots the built in potential of the Au /p-Si contact was obtained as Vbi=0.5425 V and the barrier height value (ФB(C-V)) was calculated to be ФB(C-V)=0.7145 V for Au/p-Si. It is found that for the diodes with diameters smaller than 100 µm the diode barrier height and ideality factor dependency to their diameters and correlation between the diode barrier height and its ideality factor are nonlinear, where similar to the earlier reported different metal semiconductor diodes in the literature, these parameters for the here manufactured diodes with diameters more than 100 µm are also linear. Based on the very obvious sub-nanometer C-AFM produced pictures the scientific evidence behind this controversy is also explained.     

A Skin‐Inspired Substrate with Spaghetti‐Like Multi‐Nanofiber Network of Stiff and Elastic Components for Stretchable Electronics

Mimicking the skin's non‐linear self‐limiting mechanical characteristics is of great interest. Skin is soft at low strain but becomes stiff at high strain and thereby can protect human tissues and organs from high mechanical loads. Herein, the design of a skin‐inspired substrate is reported based on a spaghetti‐like multi‐nanofiber network (SMNN) of elastic polyurethane (PU) nanofibers (NFs) sandwiched between stiff poly(vinyldenefluoride‐co‐trifluoroethylene) (P(VDF‐TrFE)) NFs layers embedded in polydimethylsiloxane elastomer. The elastic moduli of the stretchable skin‐inspired substrate can be tuned in a range that matches well with the mechanical properties of skins by adjusting the loading ratios of the two NFs. Confocal imaging under stretching indicates that PU NFs help maintain the stretchability while adding stiff P(VDF‐TrFE) NFs to control the self‐limiting characteristics. Interestingly, the Au layer on the substrate indicates a negligible change in the resistance under cyclic (up to 7000 cycles at 35% strain) and dynamic stretching (up to 35% strain), which indicates the effective absorption of stress by the SMNN. A stretchable chemoresistive gas sensor on the skin‐inspired substrate also demonstrates a reasonable stability in NO₂ sensing response under strain up to 30%. The skin‐inspired substrate with SMNN provides a step toward ultrathin stretchable electronics.     

AlInGaN量子阱垒层材料的优化

采用k·p方法理论,考虑了极化电场和自由载流子重新分布等因素,通过薛定谔方程和泊松方程自洽求解得到InGaN/AlInGaN,InGaN/GaN,InGaN/InGaN,InGaN/AlGaN量子阱导带和价带的能带结构,并由此计算了不同量子阱结构的自发发射谱.分析对比发现AlInGaN材料特有的自发极化和压电极化效应在阱垒界面处形成的极化电荷对量子阱发光特性有重要的影响.以AlInGaN为垒,优化其中各元素的组分可以减小极化电场的影响,提高量子阱自发发射谱强度.同时,综合考虑了极化电荷和势垒高度的影响,提出了具体的优化方法,并给予了物理解释.     

一种飞行器蒙皮红外辐射图像生成方法

提出了一种实用的飞行器蒙皮红外辐射图像生成方法。首先是飞行器的几何建模与网格化并通过建立控制方程求解蒙皮温度场;其次,通过飞行器蒙皮红外辐射各单元面按深度排序后依次投影,实现了数据从三维空间到二维平面的转换,生成了各个角度的飞行器蒙皮温度分布图,进而计算辐射亮度并进行规格化处理。利用图像表达方式,实现飞行器蒙皮红外波段辐射亮度成像。实验证明,该方法简单实用,为研究飞行器蒙皮红外辐射分布提供了有效的表现形式。