Study on stacking faults and microtwins in wide bandgap II-VI semiconductor heterostructures grown on GaAs

ZnMgSSe and ZnSSe layers grown on GaAs substrates with GaAs buffer layers by molecular beam epitaxy have been examined by transmission electron microscopy (TEM). The depth level at which paired triangular stacking faults are nucleated in the ZnMgSSe/GaAs heterostructure has been investigated by using the plan-view TEM technique. It has been found that in the ZnMgSSe/GaAs heterostructure the nucleation of the paired stacking faults occurs within a range of depth which starts at the II-VI/GaAs interface and ends at a level that is above the interface by about 120 nm. The dominant type of defects in ZnSSe layers, which have the single triangular shape, has been identified to be microtwins by high resolution TEM.     

T726井石炭系盐膏层钻井完井技术

T726井是中国石化西北分公司在塔河油田西南部边缘地区布置的一口重点评价井。针对塔里木盆地石炭系盐层埋藏深,温度高,地层压力大,极易发生“缩径、坍塌”,造成卡钻,同时由于盐岩层的塑性蠕动,形成不规则井眼,甚至造成套管挤毁变形事故,井身质量难以控制,固井质量难以保证等问题,通过对同类型已钻井进行总结分析,提出了一系列钻井技术措施,并在T726井严格实施。结果表明,施工全过程安全无事故,盐层套管无变形,井身质量和固井质量优良,为以后在该地区石炭系盐膏层安全钻井积累了成功的经验。     

基于细节保留的椒盐噪声自适应滤波算法

针对灰度图像中椒盐噪声的特点,提出了一种更加精确的噪声检测方法:该方法利用滤波窗口内像素点灰度值的不同,将受椒盐噪声污染的图像中像素点划分为噪声点,疑似噪声点和信号点.通过设定阈值,并参考相邻像素点的相关性来进一步区分疑似噪声点,最终建立噪声标记矩阵.对于被标记的噪声点,采用自适应滤波算法,保留更多的图像细节.仿真结果表明,该算法在除去噪声点的同时,对于边缘细节也有非常好的保护作用.     

无Cr腐蚀液显示直拉Si单晶中的氧化诱生层错

Si抛光片的氧化诱生层错(OSF)是一种重要的工艺诱生缺陷,为提高Si抛光片质量,应对氧化诱生层错的产生有充分的认识和了解,并加以克服,而简单、快捷、准确地显示缺陷是首要条件.介绍了采用环保的无Cr腐蚀液显示氧化诱生层错,实验发现无Cr腐蚀液能很好地显示氧化诱生层错,比较了无Cr腐蚀液和其他常用腐蚀液的缺陷腐蚀形貌,探讨了无Cr腐蚀液的腐蚀机理及腐蚀条件.实验发现环保的无Cr腐蚀液能很好地显示直拉Si单晶中的氧化诱生层错,能应用于生产.     

Optimizing the Optoelectronic Properties of Face-On Oriented Poly(3,4-Ethylenedioxythiophene) via Water-Assisted Oxidative Chemical Vapor Deposition

Engineering the texture and nanostructure to improve the electrical conductivity of semicrystalline conjugated polymers must address the rate-limiting step for charge carrier transport. In highly face-on orientation, the charge transport between chains within a crystallite becomes rate-limiting, which is highly sensitive to the π–π stacking distance and interchain charge transfer integral. Here, face-on oriented semicrystalline poly(3,4-ethylenedioxythiophene) (PEDOT) thin films are grown via water-assisted (W-A) oxidative chemical vapor deposition (oCVD). Combining W-A with the volatile oxidant, antimony pentachloride, yields an optimized electrical conductivity of 7520  ±  240 S cm⁻¹, a record for PEDOT thin films. Systematic control of π–π stacking distance from 3.50 Å down to 3.43 Å yields an electrical conductivity enhancement of ≈ 1140%. The highest electrical conductivity also corresponds to minimum in Urbach energy of 205 meV, indicating superior morphological order. The figure of merit for transparent conductors, σ_dc/σ_op, reaches a maximum value of 94, which is 1.9 × and 6.7 × higher than oCVD PEDOT grown without W-A and utilizing vanadium oxytrichloride and iron chloride oxidizing agents, respectively. The W-A oCVD is single-step all-dry process and provides conformal coverage, allowing direct growth on mechanical flexible, rough, and structured surfaces without the need for complex and costly transfer steps.     

Thermal Annealing and Propagation of Shockley Stacking Faults in 4H-SiC PiN Diodes

Stacking faults within 4H-SiC PiN diodes are known to be detrimental to device operation. Here, we present electroluminescence (EL) images of 4H-SiC PiN diodes providing evidence that electrically and optically stimulated Shockley stacking fault (SSF) propagation is a reversible process at temperatures as low as 210°C. Optical beam induced current (OBIC) images taken following complete optical stressing of a PiN diode and that lead to a small number of completely propagated SSFs provide evidence that such defects propagate across the n–/p+ interface and continue to grow throughout the p+ layer. These observations bring about questions regarding the validity of the currently accepted driving force mechanism for SSF propagation.     

VSF:CMOS组合电路的静态功耗评估模型

为了解决利用晶体管级电路模拟分析CMOS电路静态功耗时模拟时间随电路规模增大迅速增加的问题,在分析晶体管堆叠效应对标准单元泄漏电流影响的基础上,定义了归一化堆叠系数和电路等效堆叠系数的概念,提出了基于电路有效堆叠系数的静态功耗评估模型.该模型可用于CMOS组合电路静态功耗估算和优化.实验结果表明使用该模型进行静态功耗估算时,不需要进行Hspice模拟.针对ISCAS85基准电路的静态功耗优化结果表明,利用该模型能够取得令人满意的静态功耗优化效果,优化速度大大提高.     

凝固条件对Mg-Zn-Y合金中长周期堆垛结构的影响

应用透射电镜研究了快速凝固,常规凝固以及热处理后Mg97Zn1Y2合金中长周期堆垛结构(LPS)的形成、结构和变化特征.结果表明,快速凝固带状材料中,18R类型的LPS首先在网状第二相中形成,573 K时效20 h后,18R有向6H转变的趋势.铸态合金中LPS主要为6层堆垛结构,这种结构在573 K时效50 h后仍然保持稳定.铸态合金在823 K热处理10 h后,LPS趋于溶解,但镁基体中仍可现察到6层堆垛的LPS的存在.通过不同的凝固和热处理过程,可以获得不同结构和分布状态的LPS.     

前驱体对熔盐法制备SBN50模板晶粒的影响

分别以碳酸盐和硝酸盐为前驱体,采用熔盐法在750～1050℃合成了针状的Sr0.5Ba0.5Nb2O6(SBN50)模板晶粒。通过XRD,SEM分析方法,研究了前驱体对SBN50晶粒相结构和微观形貌的影响,并讨论了其形成机理。结果表明:前驱体性质的不同造成熔盐熔点时SrNb2O6数量和形貌的差异,影响最终SBN50晶粒的形貌;SBN50晶粒的生长是二维成核过程。     

M型铁氧体BaFeCoTiMnO微波吸收性能研究

采用共沉淀–熔盐法制备了M型铁氧体BaFe11.85-2xCoxTixMn0.15O19。运用TGA-DTA、XRD、SEM和矢量网络分析仪,对样品的晶化过程、相组成、显微形貌及微波吸收性能进行了表征。结果表明:Co2+、Ti4+固溶到铁氧体的晶格并取代Fe3+位,有助于提高铁氧体的电、磁损耗。当取代量x为1.2时,微波吸收最强,制得的样品的吸波频率在8.2～12.4 GHz范围内,tanδe、tanδμ的最大值分别为:9.0,6.8。