Characterization of GaN epitaxial layers on SiC substrates with AlxGa1−xN buffer layers

High quality GaN epitaxial layers were obtained with Al_xGa_1−xN buffer layers on 6H–SiC substrates. The low-pressure metalorganic chemical vapor deposition (LP-MOCVD) method was used. The 500 Å thick buffer layers of Al_xGa_1−xN (0≤x≤1) were deposited on SiC substrates at 1025°C. The FWHM of GaN (0004) X-ray curves are 2–3 arcmin, which vary with the Al content in Al_xGa_1−xN buffer layers. An optimum Al content is found to be 0.18. The best GaN epitaxial film has the mobility and carrier concentration about 564 cm² V⁻¹ s⁻¹ and 1.6×10¹⁷ cm⁻³ at 300 K. The splitting diffraction angle between GaN and Al_xGa_1−xN were also analyzed from X-ray diffraction curves.     

The isolation and nucleation of misfit dislocations in strained epitaxial layers grown on patterned,ion-damaged GaAs

As shown previously, the misfit dislocation density of strained epitaxial III–V layers can be significantly reduced by isolating sections (via patterned etching) of a GaAs substrate before epitaxial growth. A disadvantage of this technique is that the wafer surface is no longer planar, which can complicate subsequent device fabrication. As an alternative, we have investigated growth of 350 nm of In_0.5Ga{0.95}As by molecular beam epitaxy at two temperatures on substrates which were patterned and selectively damaged by Xe ion implantation (300 keV, 10¹⁵ cm²). Selectively etched substrates were prepared as reference samples as well. The propagation of the misfit dislocations was stopped by the ion-implanted regions of the low growth temperature (400° C) material, but the damaged portions also acted as copious nucleation sources. The resulting dislocation structure was highly anisotropic, with dislocation lines occurring in virtually only one direction. At the higher growth temperature (500° C) the defect density fell, but the ion damaged sections no longer blocked dislocation glide. Images from cathodoluminescence and transmission electron microscopy show thatthe low growth temperature material has a dislocation density of 70,000 cm^-1 in the 110 direction and less than 10,000 cm^-1 in the 110 direction. Ion channeling and x-ray diffraction show that strain is relieved in only one direction. The strain relief is consistent with the relief derived from TEM dislocation counts and Burgers vector determination. However, even this high dislocation count is not sufficient to reach the expected equilibrium strain. Reasons for the anisotropy are discussed.     

Thermally stimulated current spectroscopy of high-purity semi-insulating 4H-SiC substrates

High-purity semi-insulating (HPSI) 4H-SiC has been widely used as a substrate material for AlGaN/GaN high electron-mobility transistors because of its fairly good lattice match with GaN and its high thermal conductivity. To control material quality, it is important to understand the nature of the deep traps. For this purpose, we have successfully applied thermally stimulated current (TSC) spectroscopy to investigate deep traps in two HPSI 4H-SiC samples grown by physical vapor transport (PVT) and high-temperature chemical vapor deposition (HTCVD), respectively. Fundamentals of TSC spectroscopy, typical TSC spectra obtained on the two samples, and theoretical fittings of a boron-related trap (peaked at ∼ 150 K) will be presented. Based on literature data for deep traps in conductive 4H-SiC, the impurity and point-defect nature of several commonly observed TSC traps, peaked at ∼105 K (0.22 eV), ∼150 K (0.29 eV), ∼175 K (∼0.33 eV), ∼260 K (∼0.53 eV), ∼305 K (∼0.63 eV), and ∼360 K (0.91 eV), in the HPSI 4H-SiC will be discussed.     

Fabrication of Y_2O_3 buffer layer on polished Ni substrates for YBCO superconducting tape

1IntroductionIn recent years,worldwide research efforts have been made to develop YBCOsuperconducting tapes.Two promising approaches for the profitable production of long YBCOtapes that are suitable for carryinghigh currents in magnetic fields are RABi TS(Rolling Assisted Biaxially Textured Substrates)[1]and IBAD(Ion Beam Assisted Deposition)methods[2].In RABi TS process,the necessarily strong biaxial texture ofthe YBCOfil mis achieved by epitaxial growth of buffer layers andthe …     

Biosurfactant-and-Bioemulsifier Produced by a Promising Cunninghamella echinulata Isolated from Caatinga Soil in the Northeast of Brazil

A Mucoralean fungus was isolated from Caatinga soil of Pernambuco, Northeast of Brazil, and was identified as Cunninghamella echinulata by morphological, physiological, and biochemical tests. This strain was evaluated for biosurfactant/bioemulsifier production using soybean oil waste (SOW) and corn steep liquor (CSL) as substrates, added to basic saline solution, by measuring surface tension and emulsifier index and activity. The best results showed the surface water tension was reduced from 72 to 36 mN/m, and an emulsification index (E₂₄) of 80% was obtained using engine oil and burnt engine oil, respectively. A new molecule of biosurfactant showed an anionic charge and a polymeric chemical composition consisting of lipids (40.0% w/w), carbohydrates (35.2% w/w) and protein (20.3% w/w). In addition, the biosurfactant solution (1%) demonstrated its ability for an oil displacement area (ODA) of 37.36 cm², which is quite similar to that for Triton X-100 (38.46 cm²). The stability of the reduction in the surface water tension as well as of the emulsifier index proved to be stable over a wide range of temperatures, in pH, and in salt concentration (4%–6% w/v). The biosurfactant showed an ability to reduce and increase the viscosity of hydrophobic substrates and their molecules, suggesting that it is a suitable candidate for mediated enhanced oil recovery. At the same time, these studies indicate that renewable, relatively inexpensive and easily available resources can be used for important biotechnological processes.     

Angle-dependent photodegradation over ZnO nanowire arrays on flexible paper substrates

In this study, we grew zinc oxide (ZnO) nanowire arrays on paper substrates using a two-step growth strategy. In the first step, we formed single-crystalline ZnO nanoparticles of uniform size distribution (ca. 4 nm) as seeds for the hydrothermal growth of the ZnO nanowire arrays. After spin-coating of these seeds onto paper, we grew ZnO nanowire arrays conformally on these substrates. The crystal structure of a ZnO nanowire revealed that the nanowires were single-crystalline and had grown along the c axis. Further visualization through annular bright field scanning transmission electron microscopy revealed that the hydrothermally grown ZnO nanowires possessed Zn polarity. From photocatalytic activity measurements of the ZnO nanowire (NW) arrays on paper substrate, we extracted rate constants of 0.415, 0.244, 0.195, and 0.08 s^-1 for the degradation of methylene blue at incident angles of 0°, 30°, 60°, and 75°, respectively; that is, the photocatalytic activity of these ZnO nanowire arrays was related to the cosine of the incident angle of the UV light. Accordingly, these materials have promising applications in the design of sterilization systems and light-harvesting devices.     

Anchorage resistance of CFRP strips externally bonded to various cementitious substrates

This paper presents a study on the anchorage capacity of Carbon Fiber Reinforced Polymer (CFRP) strips bonded to a cementitious substrate used for concrete surface reprofiling. The structural strengthening of a large-scale prestressed concrete girder in the framework of a bridge retrofitting project by means of prestressed CFRP strips required the levelling of an initial negative camber of about 2–4 cm. Both midspan and girder end situations were investigated with lap-shear and prestress force-releasing tests. Four different solutions regarding the levelling material, i.e. three mortars applied by hand as well as dry shotcrete, were tested. The results in terms of strain, slip and total anchorage resistance are presented and compared. In the end, dry shotcrete is recommended for the girder application. In addition to a very convincing bond behavior, the application is, despite the necessity of involving a specialized company from the field, clearly less time-consuming and easier. The retained solution represents an interesting approach for future applications in bridge retrofitting when an even surface is necessary for bonding CFRP strips.     

Biodegradable Thin Metal Foils and Spin‐On Glass Materials for Transient Electronics

Biodegradable substrates and encapsulating materials play critical roles in the development of an emerging class of semiconductor technology, generally referred as “transient electronics”, whose key characteristic is an ability to dissolve completely, in a controlled manner, upon immersion in ground water or biofluids. The results presented here introduce the use of thin foils of Mo, Fe, W, or Zn as biodegradable substrates and silicate spin‐on‐glass (SOG) materials as insulating and encapsulating layers, with demonstrations of transient active (diode and transistor) and passive (capacitor and inductor) electronic components. Complete measurements of electrical characteristics demonstrate that the device performance can reach levels comparable to those possible with conventional, nontransient materials. Dissolution kinetics of the foils and cytotoxicity tests of the SOG yield information relevant to use in transient electronics for temporary biomedical implants, resorbable environmental monitors, and reduced waste consumer electronics.     

不同过渡层对钢基金刚石薄膜的影响

采用超高真空热丝化学气相沉积(HFCVD)系统,以甲烷和氢气为反应气体,在高速钢W18Cr4V基体上利用3种不同的过渡层(WC、Cr、WC/Cr)制备金刚石薄膜。采用场发射扫描电子显微镜(FE–SEM)、X射线衍射仪(XRD)、显微激光拉曼光谱仪(Raman)以及洛氏硬度计对过渡层和金刚石薄膜进行检测分析,研究了不同过渡层对金刚石薄膜形貌质量和附着性能的影响。结果表明,3种过渡层均可以有效减少钢基中Fe对金刚石薄膜的负面影响,提高金刚石的形核率;其中,采用WC/Cr过渡层时膜基间残余应力最小,仅为0.25 Gpa,附着性能最好。