电极材料对聚合物太阳能电池光学性能的影响

利用基于传输矩阵法(Transfer matrix method,TMM)的光学模型系统地研究了金属电极材料(Ag、Al、Au)对聚合物太阳能电池光学性能的影响.研究表明,与传统铟锡化合物(Indium tin oxide,ITO)透明电极相比,以合适厚度的金属Ag膜作透明电极,可提高活性层对入射光子的吸收效率;同时,以Ag膜作背电极时,其相应的聚合物太阳能电池的效率优于以Al或者Au为背电极的电池的效率.     

Development of Ga-doped ZnO transparent electrodes for liquid crystal display panels

Liquid crystal displays (LCDs) with Ga-doped ZnO (GZO) transparent electrodes on RGB color filters were fabricated to demonstrate the feasibility of using this new material as an alternative to indium tin oxide (ITO) electrodes. The process flow for fabricating LCDs with GZO electrodes was entirely compatible with that for commercially available LCDs using ITO electrodes. Concurrently, photolithography processing and wet-chemical etching techniques for the formation of GZO transparent electrodes on thin film transistor (TFT) arrays in LCD panels was developed. Fine-patterns of GZO with 2-μm line widths were successfully formed using lithography and wet -etching technology with a weakly acidic etchant of pH 5.5-6.8.     

固相反应法制备Nd:YAG透明陶瓷

以Y(NO₃)₃和NH₃·H₂O为原料,并在Y(NO3)3溶液中添加少量(NH₄)₂SO₄,采用沉淀法制备出化学组成为Y₂(OH)₅(NO₃)·nH₂O的先驱沉淀物.先驱沉淀物在1100℃下煅烧4h,得到了平均粒径为60nm的氧化钇原料粉体.Y₂O₃粉体与Al₂O₃、Nd₂O₃超细粉球磨混合后,采用固相反应工艺,经1700℃真空烧结5h,制备出透明的Nd:YAG陶瓷,同时对Nd:YAG透明陶瓷的光学性能进行了研究.     

高阻隔透明陶瓷膜蒸镀技术

对高阻隔透明陶瓷膜的发展概况及应用进行了综述,介绍了陶瓷膜的真空蒸镀技术、PECVD蒸镀技术的原理、特点和应用,并对陶瓷膜蒸镀技术的发展趋势进行了展望.     

透明陶瓷材料现状与发展

透明陶瓷的诞生使得高压钠灯得到实际应用.近年来通过透明陶瓷技术可以解决单晶工艺中的某些难题,并发展多晶代替单晶开发出了激光陶瓷、陶瓷闪烁体等新一代光学材料.本文就透明陶瓷的现状和发展作一简要综述.     

溶胶-凝胶法制备纳米复合透明保护薄膜

以正硅酸乙酯、钛酸丁酯、异丙醇铝和γ-缩水甘油醚氧丙基三甲氧基硅烷为先驱体,通过分步水解法制得SiO2-TiO2-Al2O3复合溶胶,利用提拉法在普通玻面镀制无机-有机复合透明保护薄膜,通过各种测试方法,对SiO2-TiO2-Al2O3复合薄膜的结构和性质进行了分析。结果表明该薄膜具有致密、透明、耐磨擦等性能。由于铝、钛纳米氧化物颗粒的存在,使得硬度及耐磨擦性能比纯SiO2薄膜均有较大的提高。     

Cold Isostatic‐Pressured Silver Nanowire Electrodes for Flexible Organic Solar Cells via Room‐Temperature Processes

Transparent conducting electrodes (TCEs) are considered to be an essential structural component of flexible organic solar cells (FOSCs). Silver nanowire (AgNW) electrodes are widely used as TCEs owing to their excellent electrical and optical properties. The fabrication of AgNW electrodes has faced challenges in terms of forming large uniform interconnected networks so that high conductivity and reproducibility can be achieved. In this study, a simple method for creating an intimate contact between AgNWs that uses cold isostatic pressing (CIP) is demonstrated. This method increases the conductivity of the AgNW electrodes, which enables the fabrication of high‐efficiency inverted FOSCs that have a power conversion efficiency of 8.75% on flexible polyethylene terephthalate with no short circuiting occurring as the CIP process minimizes the surface roughness of the AgNW electrode. This allows to achieve 100% manufacturing yield of FOSCs. Furthermore, these highly efficient FOSCs are proven to only be 2.4% less efficient even for an extreme bending radius of R ≈ 1.5 mm, compared with initial efficiency.     

ZnO-TCO薄膜及其在太阳电池中的应用

概括地阐述了ZnO透明导电薄膜(ZnO-TCO)的特性及其在薄膜太阳电池中的应用,介绍了ZnO薄膜在薄膜太阳电池中的应用背景,阐明了它在其中的作用及ZnO-TCO薄膜的主流生长方法,并给出了近年来ZnO-TCO薄膜的主要研究结果,最后展望了其应用和发展趋势.     

Ultrathin Al-doped transparent conducting zinc oxide films fabricated by pulsed laser deposition

Al-doped transparent conducting zinc oxide (AZO) films, approximately 20-110 nm-thick, were deposited on glass substrates at substrate temperatures between 200 and 300 °C by pulsed laser deposition (PLD) using an ArF excimer laser (λ = 193 nm). When fabricated at a substrate temperature of 260 °C, a 40-nm-thick AZO film showed a low resistivity of 2.61 × 10^− 4 Ω·cm, carrier concentration of 8.64 × 10²⁰ cm^− 3, and Hall mobility of 27.7 cm²/V·s. Furthermore, for an ultrathin 20-nm-thick film, a resistivity of 3.91 × 10^− 4 Ω·cm, carrier concentration of 7.14 × 10²⁰ cm^− 3, and Hall mobility of 22.4 cm²/V·s were obtained. X-ray diffraction (XRD) spectra, obtained by the θ-2θ method, of the AZO films grown at a substrate temperature of 260 °C showed that the diffraction peak of the ZnO (0002) plane increased as the film thickness increased from 20 to 110 nm. The full-width-at-half-maximum (FWHM) values were 0.5500°, 0.3845°, and 0.2979° for film thicknesses of 20, 40, and 110 nm, respectively. For these films, the values of the average transmittance in visible light wavelengths (400-700 nm) were 95.1%, 94.2%, and 96.6%, respectively. Field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM) observations showed that even the 20-nm-thick films did not show island structures. In addition, exfoliated areas or vacant and void spaces were not observed for any of the films.     

石墨烯作太阳电池透明电极的研究进展

综述了石墨烯作太阳电池透明电极的研究现状,并提出了今后的研究思路,即对石墨烯内部的位错、晶界、应变等缺陷进行理论计算,用来指导实验研究,最终通过控制位错、晶界等缺陷的运动,使其性能得到有效控制。另外,石墨烯作透明电极时,与太阳电池其它部分直接接触。在未来的研究中,制备高性能石墨烯的同时,也应该关注太阳电池中石墨烯与其它部分的界面情况。