硅微机械梳齿静电谐振器的建模与分析

基于参数化的计算机辅助设计（CAD）软件，对硅微机械梳齿静电谐振器进行了实体建模，以有限元分析软件为工具，进行了谐振器的模态分析，静态分析和谐响应分析，初步揭示了谐振器的静、动态特性，有助于改善设计效率和质量，展示了计算机辅助工程（CAE）技术在微机电系统（MEMS）研究中的重要作用。     

双波长稳频CO_2激光模糊控制系统的建模与优化

报导一种模糊逻辑控制系统的建模与优化方法。以此方法设计的模糊逻辑控制器，用于双波长稳频ＣＯ２激光器的控制得到令人满意的结果。     

Modeling ion implantation of HgCdTe

Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n⁺/n^-/p, where the n⁺ region is near the surface and roughly coincides with the implant damage, the n^- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.     

中国古典园林三维造型研究

论述了采用层次结构化及参数化三维造型方法，建立一个以造型函数库为核心，从而构造各类、各级园林景观构件表面模型的方法和过程。对于某些非建筑类的园林配景构件，采用了Ｆｒａｃｔａｌ方法进行造型。     

实体造型中的几何约束

实体造型是一个基于约束的过程，完成从功能约束到几何约束、再到代数约束的转化而得到实体模型。本文讨论了几何约束的层次性及其表示，并且对几何约束同设计意图的关系进行了研究，提出了基于ＣＳＧ／ＧＣＧ／Ｂ－ｒｅｐ的模型表示。     

An explicit finite difference method for finite-time observers

In this paper we present a numerical method for estimating the current state of a nonlinear control system. We use finite differences to discretize a modified version of the finite-time observer equations in James. The discretized equations are simple and easily programmed. The convergence and accuracy of the scheme is proved, and the scheme enjoys a number of important properties: availability of rate of convergence estimates, good robustness characteristics, and the ability to handle certain types of discontinuities in the observations. The major disadvantage is that the number of grid points required increases exponentially with the number of state dimensions.     

Modeling of Calcium Chloride and Pectin Methylesterase Prefreezing Treatments of Strawberries and Jams

ABSTRACT: :
Different calcium chloride (CaCl₂) and pectin methylesterase (PME) prefreezing treatments in a vacuum were used to clarify the most effective prefreezing factors for strawberries and traditional jams. Fractional factorial design and modeling were used. CaCl₂ had the greatest effect on the majority of the 15 studied responses ( p < 0.001). The pretreatment time should be short (about 5 to 10 min), the temperature low (less than 20 °C), the vacuum level high (pressure less than 10 kPa), the CaCl₂ concentration moderate (about 1%) and the dosage of PME comparatively low (about 50 to 100 nkat/g) in order to yield high quality frozen strawberries for jam making.     

有耗传输线的TLM模型法

本文从传输线理论出发，介绍了一种解决传输线问题的新方法－－TLM法。     

CD++: a toolkit to develop DEVS models

The features of a toolkit for modeling and simulation based on the DEVS formalism are presented. The tool is built as a set of independent software pieces running on different platforms. Not only are the main characteristics of the environment presented, a focus on its use is also considered by inclusion of application examples for a variety of problems. Many models can be defined in an automated fashion, simplifying the construction of new models and easing their verification. The use of this formal approach has allowed the development of safe and cost‐effective simulations, significantly reducing development time. Copyright © 2002 John Wiley & Sons, Ltd.     

Influence of the intrinsic layer characteristics on a-Si:H p–i–n solar cell performance analysed by means of a computer simulation

In this paper a set of one-dimensional simulations of a-Si:H p–i–n junctions under different illumination conditions and with different intrinsic layer are presented. The simulation program ASCA permits the analysis of the internal electrical behaviour of the cell allowing a comparison among the different internal configurations determined by a change in the input set. Results about the internal electric configuration will be presented and discussed outlining their influence on the current tension characteristic curve. Considerations about the drift–diffusion and the generation–recombination balance distributions, outlined by the simulation, can be used to explain the correlation between the basic device output, the i-layer characteristics (thickness and DOS), the incident radiation intensity and photon energy.